Carbon nanotube (CNT) memory cell elements and methods of forming CNT memory cell elements are provided. A CNT memory cell may comprise a CNT memory cell element, e.g., in combination with a transistor. A CNT memory cell element may include a metal/CNT layer/metal (M/CNT/M) structure formed between adjacent metal interconnect layers or between a silicided active layer (e.g., including MOSFET devices) and a metal interconnect layer. The M/CNT/M structure may be formed by a process including forming a tub opening in a dielectric region, forming a cup-shaped bottom electrode in the tub opening, forming a cup-shaped CNT layer in an interior opening defined by the cup-shaped bottom electrode, and forming a top electrode in an interior opening defined by the cup-shaped CNT layer.

Provided is a heterofullerene where n number (where n is a positive even number) of carbon atoms constituting a fullerene are substituted by n number of boron atoms or n number of nitrogen atoms.

A method for manufacturing a transistor being a bottom-gate transistor is provided. The method for manufacturing a transistor includes a step of forming a first metal layer 32 on an insulator layer 20 provided on a substrate 10 including a gate electrode, a step of applying a resist onto the first metal layer 32, and patterning the first metal layer 32 by a photolithographic method, an oxide film removal step of removing an oxide film 26 formed on the patterned first metal layer 32, and a step of forming a source electrode and a drain electrode by forming a second metal layer 42 on the first metal layer 32.

Disclosed are an apparatus for and a method of manufacturing a semiconductor device. The apparatus includes a chamber, an evaporator that evaporates an organic source to provide a source gas on a substrate in the chamber, a vacuum pump that pumps the source gas and air from the chamber, an exhaust line between the vacuum pump and the chamber, and an analyzer connected to the exhaust line. The analyzer detects a derived molecule produced from the organic source and determines a replacement time of the evaporator.

An organic electrochemical transistor including a source and drain connected by a conductive channel, a gate electrically connected to the conductive channel via an ionically stable layer, and a biological recognition layer in direct contact with the gate. The organic electrochemical transistor can be used to measure the concentration of a biological element in a biological sample. Also, an electronic device including the organic electrochemical transistor.

A complex nanostructure, which includes a first nanostructure component having at least one aperture in a side thereof; at least one second nanostructure component having a first end and a second end, wherein the first end of each of the at least one second nanostructure is inserted through a corresponding one of the at least one aperture in the first nanostructure, thereby forming at least one junction. Embodiments of the complex nanostructure include a bifurcated nanostructure transistor constructed of linear carbon nanotubes, a multiplexer constructed of a circular carbon nanotube and multiple linear carbon nanotubes, and an information unfolder constructed of linear or a combination of linear and circular carbon nanotubes. The nanotubes may optionally be decorated with genetic material such as single-strand or double-strand human DNA segments and/or may be modified by e-beam or ozone gas to add defects into the nanotubes to alter electrical/functional characteristics.

A capacitor includes a first metal layer disposed on a wafer or substrate, a first polarized dielectric layer above the first metal layer and comprising a plurality of electrets formed by aligning molecular dipoles throughout a three-dimensional surface area of a polarizable dielectric material during polarization by applying a momentary electric field of positive or negative polarity, a second metal layer disposed on the first polarized dielectric layer to electrically isolate the first polarized dielectric layer, and a second polarized dielectric layer above the second metal layer, the second polarized dielectric layer comprising a plurality of electrets formed by aligning molecular dipoles throughout a three-dimensional surface area of a polarizable dielectric material during polarization by applying a second momentary electric field of opposing polarity. A plurality of alternating polarized dielectric layers and metal layers may be arranged in series to form a stack, with an internal passivation layer disposed between each stack.

A technique, comprising: forming in situ on a support substrate: a first metal layer; a light-absorbing layer after the first metal layer; a conductor pattern after the light-absorbing layer; and a semiconductor layer after the conductor pattern; patterning the semiconductor layer using a resist mask to form a semiconductor pattern defining one or more semiconductor channels of one or more semiconductor devices; and patterning the light-absorbing layer using the resist mask and the conductor pattern, so as to selectively retain the light-absorbing layer in regions that are occupied by at least one of the resist mask and the conductor pattern.

The purpose of the present invention is to provide: an organic semiconductor composition suitable for preparing an organic thin film by a solution method, an organic thin film obtained by using the organic semiconductor composition, and a practical field effect transistor which uses the organic thin film. The practical field effect transistor which uses the organic thin film has small variances in mobility and a threshold value, while maintaining a high mobility. Disclosed in the present specification is an organic semiconductor composition including an organic semiconductor compound, an insulation compound, an organic solvent A, which is a good solvent for the insulation compound, and an organic solvent B, which is a poor solvent for the insulation compound and has a higher boiling point than the organic solvent A. The mass ratio a:b of the organic solvent A and the organic solvent B is 1:8 to 8:1.

A sensor sheet includes unit sensor sheets configured to detect a physical property value at multiple points on a sensor layer, each unit sensor sheet including a first substrate, and an electrode layer and the sensor layer sequentially formed on one side of the first substrate; and a wiring substrate to which the unit sensor sheets are configured to be coupled, the wiring substrate including a second substrate, and a plurality of wirings provided on one side of the second substrate. One side of the wiring substrate and one side of each unit sensor sheet are facing each other. A conductive bonding member configured to electrically couple each unit sensor sheet and the wiring substrate with each other, is included between the electrode layer of each unit sensor sheet and at least one of the wirings of the wiring substrate.