A low-molecular-weight fused polycyclic heteroaromatic compound has a compact planar structure in which seven or more aromatic rings and heteroaromatic rings are fused together, and thereby exhibits relatively high charge mobility, and improved processibility due to improved dissolubility for a solvent. An organic thin film and an electronic device include the fused polycyclic heteroaromatic compound expressed in Chemical Formula 1.

A display device includes a reflective layer on a first electrode, the reflective layer including silver or a silver alloy, an inorganic layer on the reflective layer, the inorganic layer having a work function that is lower than that of the reflective layer, an emission layer on the inorganic layer, an organic layer on the emission layer, and a second electrode on the organic layer.

A method of making N-type semiconductor layer includes following steps. An insulating substrate is provided. An MgO layer is deposited on the insulating substrate. A first dielectric layer is formed by acidizing the MgO layer. A semiconductor carbon nanotube layer is formed to cover the MgO layer. A source electrode and drain electrode are formed to be electrically connected to the semiconductor carbon nanotube layer. A second dielectric layer is applied on the semiconductor carbon nanotube layer. A gate electrode is formed on the second dielectric layer.

A field effect transistor and a sensor using the field effect transistor is provided. The field effect transistor can be manufactured so as to have uniform properties by simple steps at low costs, and can stably detect, when used as a sensor, a very small amount of analyte with a high sensitivity while the properties are hardly deteriorated. A channel of the field effect transistor is constituted by a single-walled carbon nanotube thin film that is grown, by a chemical vapor deposition method, using particles of a nonmetallic material as growth nuclei, the nonmetallic material containing 500 mass ppm or less metallic impurities that contain a metal and its compounds.

The present invention discloses a CNFET double-edge pulse JKL flip-flop, comprising a double-edge pulse signal generator, 31 CNFET tubes, 6 NTI gate circuits having the same circuit structure, 6 PTI gate circuits having the same circuit structure as well as the 1.sup.st and 2.sup.nd two-value inverters having the same circuit structure; it features in correct logic functions as well as high-speed and low power consumption.

Devices and methods for determining resistive states of resistive change elements in resistive change element arrays are disclosed. According to some aspects of the present disclosure the devices and methods for determining resistive states of resistive change elements can determine resistive states of resistive change elements by sensing current flow. According to some aspects of the present disclosure the devices and methods for determining resistive states of resistive change elements can determine resistive states of resistive change elements without the need for in situ selection devices or other current controlling devices. According to some aspects of the present disclosure the devices and methods for determining resistive states of resistive change elements can reduce the impact of sneak current when determining resistive states of resistive change elements.

A method for forming an organic thin film transistor is provided. An organic semiconductor layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer are formed on an insulating substrate. A method for forming the organic semiconductor layer is provided. An evaporating source is provided, and the evaporating source and the insulating substrate are spaced from each other. The carbon nanotube film structure is heated to gasify the organic semiconductor material to form the organic semiconductor layer on a depositing surface.

Devices and methods for determining resistive states of resistive change elements in resistive change element arrays are disclosed. According to some aspects of the present disclosure the devices and methods for determining resistive states of resistive change elements can determine resistive states of resistive change elements by sensing current flow. According to some aspects of the present disclosure the devices and methods for determining resistive states of resistive change elements can determine resistive states of resistive change elements without the need for in situ selection devices or other current controlling devices. According to some aspects of the present disclosure the devices and methods for determining resistive states of resistive change elements can reduce the impact of sneak current when determining resistive states of resistive change elements.

Devices and methods for determining resistive states of resistive change elements in resistive change element arrays are disclosed. According to some aspects of the present disclosure the devices and methods for determining resistive states of resistive change elements can determine resistive states of resistive change elements by sensing current flow. According to some aspects of the present disclosure the devices and methods for determining resistive states of resistive change elements can determine resistive states of resistive change elements without the need for in situ selection devices or other current controlling devices. According to some aspects of the present disclosure the devices and methods for determining resistive states of resistive change elements can reduce the impact of sneak current when determining resistive states of resistive change elements.

The present invention relates to semiconductor materials that include a silicon-based quantum dot; and a conjugated organic ligand connected to the silicon-based quantum dot to obtain a functionalized quantum dot. An additional aspect of the present invention is to provide methods that include providing a silicon-based quantum dot; and connecting a conjugated organic ligand connected to the silicon-based quantum dot to obtain a functionalized quantum dot.