Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.

Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.

A method of manufacturing a solid-state image sensor, including a first transistor for transferring charges from a charge accumulation region to a first charge holding region and a second transistor for transferring charges from the first charge holding region to a second charge holding region, the method comprising forming, on the semiconductor substrate, a resist pattern having a opening on the first charge holding region, and injecting a impurity via the opening so as to make the first charge holding region be a buried type, wherein the impurity is injected such that an impurity region, which makes the first charge holding region be a buried type, is formed at a position away from an end of the gate electrode of the second transistor.

A pixel sensor having a main photodetector and a parasitic photodiode and a method for reading out that pixel sensor are disclosed. The pixel sensor is read by reading a first potential on a floating diffusion node in the pixel sensor while the floating diffusion node is isolated from the main photodiode. The pixel sensor is then exposed to light, such, that the floating diffusion node and the photodetector are both exposed to the light. A second potential on the floating diffusion node is then readout while the floating diffusion node is isolated from the main photodiode. After the first and second potentials are readout a third potential on the floating diffusion node is readout. The main photodiode is then connected to the floating diffusion node, and a fourth potential on the floating diffusion node is readout First and second light intensities are determined from the readout potentials.

An imaging system includes a pixel array of pixel cells with each one of the pixel cells including a photodiode disposed in a semiconductor material, a global shutter gate transistor, disposed in the semiconductor material and coupled to the photodiode, a storage transistor disposed in the semiconductor material, an optical isolation structure disposed in the semiconductor material to isolate a sidewall of the storage transistor from stray light and stray charge. The optical isolation structure also includes a deep trench isolation structure that is filled with tungsten and a P+ passivation formed over an interior sidewall of the deep trench optical isolation structure. Each one of the pixel cells also include control circuitry coupled to the pixel array to control operation of the pixel array and readout circuitry coupled to the pixel array to readout image data from the plurality of pixels.

A single pixel sensor is provided, comprising a photo sensor configured to convert light into proportional signals; a charge storage configured to accumulate, repeatedly, a plurality of the signals converted by the photosensor; a first transistor coupled between a pixel voltage terminal and the photosensor; a second transistor coupled between the photosensor and the charge storage; and a readout circuit coupled between the charge storage and an output channel, wherein: the single pixel sensor is configured to carry out the repeated accumulations of signals multiple times per each readout by the readout circuit, the single pixel sensor is configured to synchronously convert reflections of light emitted by an associated illuminator or to convert light emitted by non-associated flickering light sources, and wherein the single pixel sensor is backside illuminated by the light.

In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.

There is provided an imaging apparatus that includes a photoelectric conversion section, a retention section, and first and second gates. The photoelectric conversion section is configured to convert a received light into charge. The retention section is configured to retain the charge provided by the photoelectric conversion section. The first and second gates are provided between the photoelectric conversion section and the retention section, the first and second gates being turned ON for transferring the charge from the photoelectric conversion section to the retention section, and the second gate being turned OFF after the first gate is turned OFF.

Provided is an imaging element including a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer and a second electrode. The photoelectric conversion unit further includes a charge storage electrode which is disposed to be spaced apart from the first electrode and disposed opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is formed of N number of photoelectric conversion unit segments, and the same applies to the photoelectric conversion layer, the insulating layer and the charge storage electrode. An n.sup.th photoelectric conversion unit segment is formed of an n.sup.th charge storage electrode segment, an n.sup.th insulating layer segment and an n.sup.th photoelectric conversion layer segment. As n increases, the n.sup.th photoelectric conversion unit segment is located farther from the first electrode. A thickness of the insulating layer segment gradually changes from a first to N.sup.th photoelectric conversion unit segment.

A photodetector according to an embodiment of the present disclosure including a plurality of photoelectric conversion sections that is provided to a semiconductor substrate. The photoelectric conversion sections each include a first region of a first electrical conduction type that is provided on a first surface side of the semiconductor substrate, a second region of a second electrical conduction type that is provided on a second surface side of the semiconductor substrate opposite to the first surface, a third region of a third electrical conduction type that is provided in a region between the first region and the second region of the semiconductor substrate, a first electrode that extends from the second surface in a thickness direction of the semiconductor substrate, a pixel separation layer having an insulation property, and a second electrode that is electrically coupled to the second region from the second surface side. The third region absorbs incident light. The first electrode is electrically coupled to the first region on a bottom surface. The pixel separation layer is provided to a side surface of the first electrode.