Disclosed is a transistor including an active layer disposed on a substrate, the active layer including an oxide semiconductor material having a first metal, a gate insulating film disposed on the active layer, a gate electrode at least partially overlapping the active layer on the gate insulating film, a first source-drain electrode and a second source-drain electrode respectively connected to a first source-drain region and a second source-drain region of the active layer, while being insulated from the gate electrode, and a second metal oxide insulating film doped with the first metal, the second metal oxide insulating film being disposed between the gate insulating film and the active layer.

A semiconductor device that occupies a small area is provided. The semiconductor device includes a semiconductor layer, a first conductive layer, a second conductive layer, a third conductive layer, a fourth conductive layer, a first insulating layer, a second insulating layer, and a third insulating layer. The first insulating layer is positioned over the first conductive layer. The second conductive layer is positioned over the first conductive layer with the first insulating layer therebetween. The second insulating layer covers the top surface and a side surface of the second conductive layer. The third conductive layer is positioned over the second insulating layer. The semiconductor layer is in contact with the top surface of the first conductive layer, a side surface of the second insulating layer, and the third conductive layer. The third insulating layer is positioned over the semiconductor layer. The fourth conductive layer is positioned over the semiconductor layer with the third insulating layer therebetween.

A semiconductor device and its manufacturing method are provided. The semiconductor device includes a substrate, an oxygen-containing protrusive structure disposed above the substrate, a metal oxide layer, a gate dielectric layer disposed on the metal oxide layer, and a gate disposed on the gate dielectric layer. The oxygen-containing protrusive structure has a first surface, a second surface opposite to the first surface, and sidewalls connected to the first and second surfaces. The metal oxide layer includes first, second, and third portions. The first portion covers the first surface. The second portion is connected to the first portion and covers the sidewalls of the oxygen-containing protrusive structure. A resistivity of the second portion gradually decreases away from the first portion. The third portion is connected to the second portion and extends from the sidewalls of the oxygen-containing protrusive structure in a direction away from the oxygen-containing protrusive structure.

A transistor includes a gate electrode, a gate dielectric, a channel layer and a source line and bit line. The gate electrode includes a first gate material layer and a second gate material layer disposed on the first gate material layer, wherein a work function of the first gate material layer is lower than a work function of the second gate material layer. The gate dielectric is disposed on the gate electrode. The channel layer is disposed on the gate dielectric. The source line and bit line are disposed on and connected to the channel layer.

A transistor having excellent electrical characteristics is provided. The transistor includes an indium oxide film and a metal oxide film over the indium oxide film. A region of the indium oxide film where a channel is formed is a single crystal. The metal oxide film contains indium, gallium, and zinc. The <111> orientation of the single crystal region of the indium oxide film is parallel or substantially parallel to the <001> orientation of a crystal in the metal oxide film. The indium oxide film can be provided over a silicon oxide film or a silicon nitride film. Alternatively, the indium oxide film can be provided over a metal oxide film containing indium, tin, and silicon.

A semiconductor device includes: an oxide semiconductor layer having a pattern; a gate electrode facing the oxide semiconductor layer; a gate insulating layer provided between the oxide semiconductor layer and the gate electrode; a first insulating layer provided above the gate electrode and having a first opening overlapping a pattern edge portion of the oxide semiconductor layer in a plan view; and a first electrode provided above the first insulating layer and inside the first opening, and contacting the oxide semiconductor layer so as to cover the pattern edge portion of the oxide semiconductor layer in a bottom part of the first opening.

A semiconductor device that occupies a small area is provided. The semiconductor device includes a first conductive layer, a second conductive layer over the first conductive layer, a first insulating layer over the second conductive layer, a semiconductor layer and a third conductive layer over the first insulating layer, a second insulating layer over the semiconductor layer and the third conductive layer, and a fourth conductive layer over the second insulating layer; at least part of the second conductive layer is in contact with a top surface of the first conductive layer; the semiconductor layer is in contact with the top surface of the first conductive layer, a side surface of the second conductive layer, the third conductive layer, and a side surface of the first insulating layer; and the fourth conductive layer overlaps with the semiconductor layer with the second insulating layer therebetween.

A semiconductor device comprises a first nanosheet transistor structure, a second nanosheet transistor structure stacked on the first nanosheet transistor structure, and a semiconductor layer disposed between the first nanosheet transistor structure and the second nanosheet transistor structure. A first dielectric spacer is disposed around a first end portion of the semiconductor layer, and a second dielectric spacer disposed around a second end portion of the semiconductor layer. The second end portion of the semiconductor layer is disposed opposite the first end portion.

A thin film transistor and a preparation method therefor, a memory, and a display. The thin film transistor comprises: a first source/drain layer (1), a first insulating layer (2), a second source/drain layer (3) and a second insulating layer (4) which are sequentially stacked; and a gate (6) and a channel layer (5) surrounding the gate (6), which are located in the second insulating layer (4), the second source/drain layer (3) and the first insulating layer (2). The channel layer (5) is in contact with the first source/drain layer (1), the first insulating layer (2), the second source/drain layer (3) and the second insulating layer (4). The thin film transistor is a CAA architecture of an annular channel surrounding the gate (6). Moreover, the leakage current of the gate (6) and the parasitic capacitance of the thin film transistor can be reduced by adding the second insulating layer (4) above the second source/drain layer (3).

An example thin-film transistor includes a source and a gate. The source includes a body of source metal and a body of capacitance-tuning material disposed on the body of source metal. The body of capacitance-tuning material is configured to control a capacitance between the source and the gate. A drain of the thin-film transistor may also include a body of capacitance-tuning material. Capacitance-tuning material may be provided outside the source/drain, for example, adjacent a gate dielectric material. The thin-film transistor may further include a body of reducing material to draw oxygen out of other materials of the thin-film transistor. The thin-film transistor may further include a body of hardmask material used during the making of the thin-film transistor.