A semiconductor device includes a fin-shaped semiconductor layer on a semiconductor substrate and a second pillar-shaped semiconductor layer on the fin-shaped semiconductor layer. A metal contact electrode is around the second pillar-shaped semiconductor layer, and a metal contact line is connected to the metal contact electrode. A diffusion layer is in an upper portion of the fin-shaped semiconductor layer, and the contact electrode is connected to the diffusion layer. A contact surrounds an upper sidewall of the second pillar-shaped semiconductor layer and is connected to the contact electrode.

A method for producing a semiconductor device includes a first step of forming a first insulating film around a fin-shaped semiconductor layer; a second step of forming a first pillar-shaped semiconductor layer, a first dummy gate, a second pillar-shaped semiconductor layer, and a second dummy gate; a third step of forming a third dummy gate and a fourth dummy gate; a fourth step of forming a third diffusion layer in an upper portion of the fin-shaped semiconductor layer, in a lower portion of the first pillar-shaped semiconductor layer, and in a lower portion of the second pillar-shaped semiconductor layer; a fifth step of forming a gate electrode and a gate line around the first pillar-shaped semiconductor layer and forming a contact electrode and a contact line around the second pillar-shaped semiconductor layer; and a sixth step of forming first to fifth contacts.

Semiconductor device and the manufacturing method thereof are disclosed. An exemplary method comprises forming a first stack structure and a second stack structure in a first area over a substrate, wherein each of the stack structures includes semiconductor layers separated and stacked up; depositing a first interfacial layer around each of the semiconductor layers of the stack structures; depositing a gate dielectric layer around the first interfacial layer; forming a dipole oxide layer around the gate dielectric layer; removing the dipole oxide layer around the gate dielectric layer of the second stack structure; performing an annealing process to form a dipole gate dielectric layer for the first stack structure and a non-dipole gate dielectric layer for the second stack structure; and depositing a first gate electrode around the dipole gate dielectric layer of the first stack structure and the non-dipole gate dielectric layer of the second stack structure.

A flat panel display device with an oxide thin film transistor is disclosed which includes: an oxide semiconductor layer which has a width of a first length and is formed on a buffer film; a gate insulation film which has a width of a second length and is formed on the oxide semiconductor layer; a gate electrode which has a width of a third length and is formed on the gate insulation film; an interlayer insulation film formed on the entire surface of the substrate provided with the gate electrode; source and drain electrodes formed on the interlayer insulation film and connected to the oxide semiconductor layer; a pixel electrode formed on a passivation film and connected to the drain electrode. The first length is larger than the second length and the second length is larger than the third length.

A semiconductor device in which parasitic capacitance is reduced is provided. A first insulating layer is deposited over a substrate. A first oxide insulating layer and an oxide semiconductor layer are deposited over the first insulating layer. A second oxide insulating layer is deposited over the oxide semiconductor layer and the first insulating layer. A second insulating layer and a first conductive layer are deposited over the second oxide insulating layer. A gate electrode layer, a gate insulating layer, and a third oxide insulating layer are formed by etching. A sidewall insulating layer including a region in contact with a side surface of the gate electrode layer is formed. A second conductive layer is deposited over the gate electrode layer, the sidewall insulating layer, the oxide semiconductor layer, and the first insulating layer. A third conductive layer is deposited over the second conductive layer. A low-resistance region is formed in the oxide semiconductor layer by performing heat treatment. An element contained in the second conductive layer moves from the second conductive layer to the oxide semiconductor layer side by performing the heat treatment. An element contained in the oxide semiconductor layer moves from the oxide semiconductor layer to the third conductive layer side by performing the heat treatment.

A semiconductor structure is provided comprising a vertical channel structure extending from a substrate and formed as a channel between a source region and a drain region. The semiconductor structure further comprises a metal gate that surrounds a portion of the vertical channel structure. The metal gate has a gate length. The metal gate has a first gate section with a first workfunction and a first thickness. The metal gate also has a second gate section with a second workfunction and a second thickness. The first thickness level is different from the second thickness level and the sum of the first thickness level and the second thickness level is equal to the gate length. The ratio of the first thickness level to the second thickness level for the gate length was chosen to achieve a threshold voltage level for the semiconductor device.

A semiconductor device includes a first insulating layer having a first side wall, an oxide semiconductor layer located on the first side wall, a gate insulating layer located on the oxide semiconductor layer, the oxide semiconductor layer being located between the first side wall and the gate insulating layer, a gate electrode facing the oxide semiconductor layer located on the first side wall, the gate insulating layer being located between the oxide semiconductor layer and the gate electrode, a first electrode located below the oxide semiconductor layer and connected with one portion of the oxide semiconductor layer, and a second electrode located above the oxide semiconductor layer and connected with the other portion of the oxide semiconductor layer.

A vertical ferroelectric field effect transistor construction comprises an isolating core. A transition metal dichalcogenide material encircles the isolating core and has a lateral wall thickness of 1 monolayer to 7 monolayers. A ferroelectric gate dielectric material encircles the transition metal dichalcogenide material. Conductive gate material encircles the ferroelectric gate dielectric material. The transition metal dichalcogenide material extends elevationally inward and elevationally outward of the conductive gate material. A conductive contact is directly against a lateral outer sidewall of the transition metal dichalcogenide material that is a) elevationally inward of the conductive gate material, or b) elevationally outward of the conductive gate material. Additional embodiments are disclosed.

A top-gated graphene field effect transistor can be fabricated by forming a layer of graphene on a substrate, and applying an electrochemical deposition process to deposit a layer of dielectric polymer on the graphene layer. An electric potential between the graphene layer and a reference electrode is cycled between a lower potential and a higher potential. A top gate is formed above the polymer.

An Ultra Thin Body and Box (UTBB) fully depleted silicon on insulator (FDSOI) field effect transistor (FET) employing a split gate topology is provided. A gate dielectric layer is disposed beneath a gate structure and in contact with a channel layer of the device. The gate dielectric layer contains two portions, a thin portion and a thick portion. The thin portion is arranged and configured to reduce a trans-conductance of the device, while a thick portion is arranged and configured to increase the break down voltage of the device. The device further contains a bulk region that can be electrically connected to voltage source to provide control over the threshold voltage of the device.