A MEMS piezoelectric device includes a monolithic semiconductor body having first and second main surfaces extending parallel to a horizontal plane formed by first and second horizontal axes. A housing cavity is arranged within the monolithic semiconductor body. A membrane is suspended above the housing cavity at the first main surface. A piezoelectric material layer is arranged above a first surface of the membrane with a proof mass coupled to a second surface, opposite to the first surface, along the vertical axis. An electrode arrangement is provided in contact with the piezoelectric material layer. The proof mass causes deformation of the piezoelectric material layer in response to environmental mechanical vibrations. The proof mass is coupled to the membrane by a connection element arranged, in a central position, between the membrane and the proof mass in the direction of the vertical axis.

A MEMS piezoelectric device includes a monolithic semiconductor body having first and second main surfaces extending parallel to a horizontal plane formed by first and second horizontal axes. A housing cavity is arranged within the monolithic semiconductor body. A membrane is suspended above the housing cavity at the first main surface. A piezoelectric material layer is arranged above a first surface of the membrane with a proof mass coupled to a second surface, opposite to the first surface, along the vertical axis. An electrode arrangement is provided in contact with the piezoelectric material layer. The proof mass causes deformation of the piezoelectric material layer in response to environmental mechanical vibrations. The proof mass is coupled to the membrane by a connection element arranged, in a central position, between the membrane and the proof mass in the direction of the vertical axis.

Aspects of the embodiments are directed to systems and devices that include a piezo-electric element comprising a top-side electrode and a bottom-side electrode; a metal contact pad electrically connected to the bottom-side electrode; an electrode electrically connected to the top-side electrode; and an encasement encasing the piezo-electric element. The piezo-electric element can be prepared to include steps and metallization for use in one or more types of packaging.

In an embodiment a device includes a piezoelectric transducer element and a support connected mechanically to each other thereby forming an assembly, wherein the piezoelectric transducer element and the support are configured to be jointly deformed under an action of a first force, wherein the support includes a neutral fiber arranged inside the support, the neutral fiber configured to not undergo any change in length during a bending of the assembly, and wherein the piezoelectric transducer element includes a ferroelectric polymer layer or a layer having a composite material including a ceramic material and a piezoelectric polymer matrix.

An electronic module includes a substrate that includes a first main surface and a second main surface, at least one first electronic component that includes electrodes on a mounting surface thereof on the substrate and that includes a hollow portion, at least one second electronic component that includes electrodes on a mounting surface thereof on the substrate and that includes no hollow portion, and a sealing resin. The at least one first electronic component is mounted on the first main surface of the substrate and sealed with the sealing resin. The at least one second electronic component is mounted on the second main surface of the substrate and is not sealed with the sealing resin.

A stacked-die oscillator package includes an oscillator circuit die having inner bond pads, and outer bond pads, and a bulk acoustic wave (BAW) resonator die having a piezoelectric transducer with a first and second BAW bond pad on a same side coupled to a top and bottom electrode layer across a piezoelectric layer. A first metal bump is on the first BAW bond pad and a second metal bump is on the second BAW bond pad flip chip bonded to the inner bond pads of the oscillator circuit die. A polymer material is in a portion of a gap between the BAW and oscillator circuit die.

An ultrasonic transducer that includes a delay line, an active piezoelectric element, and interposing metal conductive layer between the delay line and active piezoelectric element. The delay line and active piezoelectric element are joined so that ultrasonic waves may be coupled from the active piezoelectric element into the delay line or from the delay line into the active piezoelectric element. A via is formed, using a milling operation, in the active piezoelectric element to expose the edge of the interposing metal conductive layer between the delay line and active piezoelectric element. A conductive layer makes electrical contact between the interposing metal conductive layer and the surface of the active piezoelectric element to allow an electrical connection to be made from the surface of the active piezoelectric element to the interposing metal conductive layer.

This application provides a piezoelectric component, a piezoelectric apparatus and a method for manufacturing the same, and relates to the field of piezoelectric technologies. In order to solve a problem of a relatively large misalignment between a piezoelectric component and a target transfer position on a glass substrate occurred after the piezoelectric component is transferred in the related transfer methods, and to improve the transfer accuracy of the piezoelectric component. The piezoelectric component includes: a component body and at least one electrode structure arranged on a side of the component body. The at least one electrode structure includes a plurality of strip-shaped electrode pins, and the plurality of electrode pins is arranged at intervals.

A microelectromechanical transducer includes a semiconductor body having first and second surfaces opposite to one another. A plurality of trenches extend in the semiconductor body from the first surface towards the second surface, including a first pair of trenches having a respective main direction of extension along a first axis, and a second pair of trenches having a respective main direction of extension along a second axis orthogonal to the first axis. A first piezoresistive sensor and a second piezoresistive sensor extend at the first surface of the semiconductor body respectively arranged between the first and second pair of trenches. The first piezoresistive sensor, the second piezoresistive sensor and the plurality of trenches form an active region. A first structural body is mechanically coupled to the first surface of the semiconductor body to form a first sealed cavity which encloses the active region.

A multi-layer piezoelectric microactuator assembly has at least one poled and active piezoelectric layer and one poled but inactive piezoelectric layer. The poled but inactive layer acts as a constraining layer in resisting expansion or contract of the first piezoelectric layer thereby reducing or eliminating bending of the assembly as installed in an environment, thereby increasing the effective stroke length of the assembly. Poling only a single layer would induce stresses into the device; hence, polling both piezoelectric layers even though only one layer will be active in use reduces stresses in the device and therefore increases reliability.