Provided are resonators, a resonator system including the resonators, and a method of manufacturing the resonators. The resonator includes a vibration beam configured to vibrate in response to an external signal, a sensing unit configured to detect the movement of the vibration beam, and a lumped mass unit including a base unit that contacts the vibration beam and a wing unit arranged separately from the vibration beam on the base unit.

An ultrasonic module and a manufacturing method for ultrasonic module are provided. The ultrasonic module includes a substrate, a composite layer, and a covering layer. The substrate has an upper surface. The composite layer has a top surface, a bottom surface, and a recessed surface recessed toward the bottom surface. The bottom surface is on the upper surface of the substrate. One or more space is formed between the recessed surface and the upper surface. The composite layer has one or more first groove extending from the top surface toward the recessed surface. The first groove separates the composite layer into a circuit structure and an ultrasonic structure connected to the circuit structure. The covering layer is assembled on the top surface of the composite layer.

An ultrasonic element array includes a first piezoelectric element, a second piezoelectric element, a third piezoelectric element, and a fourth piezoelectric element each having a piezoelectric material sandwiched by a first electrode and a second electrode, a first wire connecting the second electrode of the first piezoelectric element and the second electrode of the second piezoelectric element, a second wire connecting the second electrode of the third piezoelectric element and the second electrode of the fourth piezoelectric element, a third wire connecting to the second wire over the first wire, and an insulating film located between the first wire and the third wire, wherein the insulating film has an inorganic insulating film made of an inorganic material and an organic insulating film made of an organic material, and the inorganic insulating film covers the piezoelectric elements.

The subject disclosure relates to techniques for providing semiconductor chip security using piezoelectricity. According to an embodiment, an apparatus is provided that comprises an integrated circuit chip comprising a pass transistor that electrically connects two or more electrical components of the integrated circuit chip. The apparatus further comprises a piezoelectric element electrically connected to a gate electrode of the pass transistor; and a packaging component that is physically connected to the piezoelectric element and applies a mechanical force to the piezoelectric element, wherein the piezoelectric element generates and provides a voltage to the gate electrode as a result of the mechanical force, thereby causing the pass transistor to be in an on-state. In one implementation, the two or more electrical components comprise a circuit and a power source. In another implementation, the two or more electrical components comprise two circuits.

A stacked-die oscillator package includes an oscillator circuit die having inner bond pads, and outer bond pads, and a bulk acoustic wave (BAW) resonator die having a piezoelectric transducer with a first and second BAW bond pad on a same side coupled to a top and bottom electrode layer across a piezoelectric layer. A first metal bump is on the first BAW bond pad and a second metal bump is on the second BAW bond pad flip chip bonded to the inner bond pads of the oscillator circuit die. A polymer material is in a portion of a gap between the BAW and oscillator circuit die.

Various acceleration sensors are disclosed. In some cases, an inertial mass may be formed during back-end-of-line (BEOL). In other cases, a membrane may have a bent, undulated or winded shape. In yet other embodiments, an inertial mass may span two or more pressure sensing structures.

A piezoelectric drive apparatus for a motor, the apparatus including a substrate having a longitudinal direction and a widthwise direction perpendicular to the longitudinal direction, a piezoelectric element provided on the substrate and having a first electrode, a second electrode, and a piezoelectric body positioned between the first electrode and the second electrode, and a contact section that is attached to a front end section of the substrate in the longitudinal direction thereof or in contact with the front end section of the substrate in the longitudinal direction thereof and comes into contact with a driven body, wherein the longitudinal direction of the substrate roughly coincides with a direction in which Young's modulus is minimized in a plane of the substrate.

A method of manufacturing a micro-electrical-mechanical system (MEMS) assembly includes mounting a micro-electrical-mechanical system (MEMS) actuator to a metal plate. An image sensor assembly is mounted to the micro-electrical-mechanical system (MEMS) actuator. The image sensor assembly is electrically coupled to the micro-electrical-mechanical system (MEMS) actuator, thus forming a micro-electrical-mechanical system (MEMS) subassembly.

The present disclosure relates to methods of manufacture of piezoelectric ceramic transducers useable, for example, in an ultrasound probe, using a poling process. The poling is accomplished without contacting transducer elements and by subjecting the piezoelectric ceramic transducer to a corona discharge. The disclosure further describes a system for poling a transducer comprising at least one piezoelectric ceramic component or transducer assembly, a ground plane comprising an electrical polarity, and a corona source connected to a first power source configured to supply a first voltage to the corona source having an electrical polarity opposite the electrical polarity of the ground plane. The at least one piezoelectric ceramic component or transducer assembly is positioned between the corona source and the ground plane within a chamber.

A semiconductor device includes a buffer layer formed with a semiconductor adapted to produce piezoelectric polarization, and a channel layer stacked on the buffer layer, wherein a two-dimensional hole gas, generated in the channel layer by piezoelectric polarization of the buffer layer, is used as a carrier of the channel layer. In a complementary semiconductor device, the semiconductor device described above and an n-type field effect transistor are formed on the same compound semiconductor substrate. Further, a semiconductor device manufacturing method includes forming a compound semiconductor base portion, forming a buffer layer on the base portion, forming a channel layer on the buffer layer, forming a gate on the channel layer, and forming a drain and source with the gate therebetween on the channel layer.