An organic photoelectronic device includes a first electrode having a plurality of nanopatterns arranged at a regular interval, a second electrode facing the first electrode and an active layer between the first electrode and the second electrode, the active layer absorbing light in at least one wavelength of a visible ray region.

A pixel includes a CMOS support and at least two organic photodetectors. A same lens is vertically in line with the organic photodetectors.

An imaging device includes at least one unit pixel cell including a photoelectric converter and a voltage application circuit. The photoelectric converter includes a first electrode, a light-transmitting second electrode, a first photoelectric conversion layer containing a first material and a second photoelectric conversion layer containing a second material. The impedance of the first photoelectric conversion layer is larger than the impedance of the second photoelectric conversion layer. The voltage application circuit applies a first voltage or a second voltage having a larger absolute value than the first voltage selectively between the first electrode and the second electrode.

A solid-state image sensor includes a pixel formed, upon forming a structure where a photoelectric conversion layer is laminated on a wiring layer constituting a pixel circuit, by forming at least the photoelectric conversion layer and a wiring layer bonding layer on a different substrate from a semiconductor substrate in which the wiring layer is formed, and by bonding the wiring layer bonding film of the different substrate and the wiring layer of the semiconductor substrate together.

Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes a first and second photoelectric conversion materials, a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and the first and second photoelectric conversion materials satisfy Relationship Equation 1, and an image sensor and an electronic device including the same.
Tm.sub.2(° C.)−Ts.sub.2(10)(° C.)≥Tm.sub.1(° C.)−Ts.sub.1(10)(° C.)  [Relationship Equation 1]

An optical fingerprint identification system includes a cover, a light emitting layer, an optical layer, an image sensor and a base that are sequentially disposed from top to bottom. The cover has a fingerprint contact surface on top. The image sensor has an image surface. The optical layer includes a first array layer and a second array layer, and the first array layer is stacked on top of the second array layer. The first array layer and the second array layer respectively include a plurality of first array lens elements and a plurality of second array lens elements respectively arranged at equal intervals in a first direction. Each of the first array lens elements and a corresponding second array lens element of the second array layer are coaxial along an optical axis and form an imaging unit.

Disclosed is a method for manufacturing an inverted organic electronic device. The method includes preparing a substrate having a first electrode; depositing a mixture of a cathode interface material and a photo active material onto the first electrode to form a bilayer or composite layer of a cathode interface layer and a photo active layer, followed by forming an anode interface layer on the bilayer or composite layer; and forming a second electrode on the anode interface layer. According to the present invention, it is possible to achieve simplification of a manufacturing process of an inverted organic electronic device and to provide an inverted organic electronic device having excellent performance by forming a cathode interface layer in the form of a uniform and pinhole-free thin film.

Detectors and methods of forming the same include aligning a semiconducting carbon nanotubes on a substrate in parallel to form a nanotube layer. The aligned semiconducting carbon nanotubes in the nanotube layer are cut to a uniform length corresponding to a detection frequency. Metal contacts are formed at opposite ends of the nanotube layer.

The present disclosure provides a photoelectric conversion apparatus which includes a semiconductor substrate, signal output units disposed on the semiconductor substrate, a plurality of photoelectric conversion layers disposed on a surface of the substrate, and an upper electrode in this order. The photoelectric conversion apparatus further includes insulation layers which are disposed between the plurality of photoelectric conversion layers and which have lines connected to power supply units. The upper electrode and the lines are electrically connected to each other on side surfaces of the insulation layers.

A compound for an organic photoelectric device is represented by Chemical Formula 1. An organic photoelectric device includes a first electrode and a second electrode facing each other and an active layer between the first electrode and the second electrode, the active layer including the compound represented by Chemical Formula 1.