A method of growing a III-V semiconductor compound film for a semiconductor device including the steps of depositing a textured oxide buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being a component of a III-V compound and forming a layer on the inorganic film on which additional elements from the III-V compound are added, forming a top layer of a tandem solar cell.

Hole transport layers, electron transport layers, layer stacks, and optoelectronic devices involving perovskite materials and materials used as precursors, and methods of making the same, are described.

Methods and devices that use alkali metal chalcohalides having the chemical formula A.sub.2TeX.sub.6, wherein A is Cs or Rb and X is I or Br, to convert hard radiation, such as X-rays, gamma-rays, and/or alpha-particles, into an electric signal are provided. The devices include optoelectronic and photonic devices, such as photodetectors and photodiodes. The method includes exposing the alkali metal chalcohalide material to incident radiation, wherein the material absorbs the incident radiation and electron-hole pairs are generated in the material. A detector is configured to measure a signal generated by the electron-hole pairs that are formed when the material is exposed to incident radiation.

Optical receiver packages and device assemblies that include photodetector (PD) chips having focus lenses monolithically integrated on PD die backsides are disclosed. An example receiver package includes a support structure, a PD die, and an optical input device. The PD die includes a PD, integrated proximate to a first face of the PD die, and further includes a lens, integrated on, or proximate to, an opposite second face. The first face of the PD die faces the support structure, while the second face (“backside”) faces the optical input device. The optical receiver architectures described herein may provide an improvement for the optical alignment tolerance issues, especially for high-speed operation in which the active aperture of the PD may have to be very small. Furthermore, architectures described herein advantageously enable integrating a focus lens in a PD die that may be coupled to the support structure in a flip-chip arrangement.

An image sensor includes a sensor region for receiving light and generating an image data and a pad region adjacent to the sensor region, an insulation layer on the substrate, and a lower transparent electrode on the insulation layer in the sensor region, and an etch stop layer on the insulation layer in the sensor region and pad region. The etch stop layer may include silicon nitride. A height of an uppermost surface of the lower transparent electrode may be substantially equal to a height of an upper surface of the etch stop layer, with respect to the substrate.

An organic device is disclosed. In an embodiment the organic device includes an organic component designed to emit and/or detect radiation, wherein the organic component has a first layer stack and a radiation passage surface and an organic protection diode having a second layer stack, wherein the organic protection diode is arranged directly after the organic component in a stacking direction (Z), and wherein the organic protection diode is designed to protect the organic component from an electrostatic discharge and/or from a polarity reversal of the organic component.

Various embodiments include an image sensor providing global electronic shutter having an integrated circuit, a first charge-extracting layer, an optically sensitive layer, and a second hole-extracting layer. In a first mode (the ‘on’ mode), electrons are extracted via the first charge-extracting layer. In a second mode (the ‘off’ mode), the extraction of holes is prevented by the first charge-extracting layer. Other embodiments are disclosed.

An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor.

An imaging device including pixels each including: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the second electrode of each of the pixels being electrically connected to each other; and a transistor having a gate electrically connected to the first electrode. The imaging device further including voltage supply circuitry electrically connected to the second electrode, in which the voltage supply circuitry supplies a first voltage to the second electrode in an exposure period, the voltage supply circuitry supplies a second voltage to the second electrode in a non-exposure period, an a potential difference between the first electrode and the second electrode in the non-exposure period is less than a potential difference between the first electrode and the second electrode in the exposure period.

The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode (11) and a negative electrode (14), at least one charge blocking layer (13, 15) arranged between the two electrodes, and a photoelectric conversion layer (12) arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer (13) or a hole blocking layer (15), and a potential of the charge blocking layer is bent. The present technology is applied to, for example, a solid-state imaging device, a solar cell, and the like having a photoelectric conversion element.