Disclosed is a tandem solar cell according to an aspect including: a silicon lower cell; a perovskite upper cell disposed on the silicon lower cell; and a bonding layer for bonding the silicon lower cell and the perovskite upper cell between the silicon lower cell and the perovskite upper cell, wherein the front surface portion of the silicon lower cell being in contact with the bonding layer includes a texture structure, the bonding layer includes a first transparent electrode layer formed on the sidewall of the texture structure, a buried layer filling concave portions of the texture structure on the first transparent electrode layer, and a second transparent electrode layer on top surfaces of the buried layer, the first transparent electrode layer and the texture structure.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is disposed to be opposed to the first electrode; and an organic photoelectric conversion layer that is provided between the first electrode and the second electrode and includes one organic semiconductor material. The organic photoelectric conversion layer includes at least one or more domains (D1, D2, and D3) in a horizontal cross section. The one or more domains (D1, D2, and D3) are each formed by using the one organic semiconductor material.

An imaging element includes a photoelectric conversion section including a first electrode 21, a photoelectric conversion layer 23A including an organic material, and a second electrode 22 that are stacked; an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A; and an inorganic oxide semiconductor material included in the inorganic oxide semiconductor material layer 23B contains aluminum (Al) atoms, tin (Sn) atoms, zinc (Zn) atoms, and oxygen (O) atoms.

An imaging element of the present disclosure includes a photoelectric conversion section including a first electrode 21, a photoelectric conversion layer 23A including an organic material, and a second electrode 22 that are stacked; an inorganic semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A; and a value ΔEN (=EN.sub.anion−EN.sub.cation) is less than 1.695, and preferably 1.624 or less, which results from subtracting an average value EN.sub.cation of electronegativities of cationic species included in the inorganic semiconductor material layer from an average value EN.sub.anion of electronegativities of anionic species included in the inorganic semiconductor material layer 23B.

A detection substrate and a flat-panel detector, and relates to the technical field of photoelectric detection. The detection substrate can improve radiation resistance and prolong a service life without increasing the thickness of a scintillator layer. The detection substrate includes a plurality of detection pixel units arranged in an array. Each of the detection pixel units includes: a transistor, a photoelectric conversion section, and a scintillator layer, with the photoelectric conversion section disposed between the transistor and the scintillator layer, the photoelectric conversion section includes a radiation sensitive layer and a photosensitive unit, which are laminated in arrangement; the radiation sensitive layer is configured to absorb rays and convert the rays into carriers; and the photosensitive unit is configured to at least absorb visible light and convert the visible light into carriers. The present disclosure is applicable to the production of the detection substrates.

Disubstituted diaryloxybenzoheterodiazole compound of general formula (I):

##STR00001##

in which: Z represents a sulfur atom, an oxygen atom, a selenium atom; or an NR.sub.5 group in which R.sub.5 is selected from linear or branched C.sub.1-C.sub.20, or from optionally substituted aryl groups; R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are as defined in the claims. The disubstituted diaryloxybenzoheterodiazole compound of general formula (I) can advantageously be used as a spectrum converter in luminescent solar concentrators (LSCs) which are in turn capable of improving the performance of photovoltaic devices (or solar devices) selected, for example, from photovoltaic cells (or solar cells), photovoltaic modules (or solar modules) on either a rigid substrate or a flexible substrate.

The present technology relates to a solid-state image sensing device capable of restricting a deterioration in photoelectric conversion characteristic of a photoelectric conversion unit, and an electronic device. A solid-state image sensing device includes: a photoelectric conversion unit formed outside a semiconductor substrate; a charge holding unit for holding signal charges generated by the photoelectric conversion unit; a reset transistor for resetting the potential of the charge holding unit; a capacitance switching transistor connected to the charge holding unit and directed for switching the capacitance of the charge holding unit; and an additional capacitance device connected to the capacitance switching transistor. The present technology is applicable to solid-state image sensing devices and the like, for example.

A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.

An image sensor includes a substrate having a photoelectric conversion element therein, a first insulating layer on the substrate, a contact penetrating through the first insulating layer, a color filter on at least one side of the contact, and a moisture absorption prevention layer in contact with a sidewall of the contact and extending on an upper surface of the color filter.

An optoelectronic assembly including an optically active region configured for emitting and/or absorbing light, and an optically inactive region configured for component-external contacting of the optically active region is provided. The optically inactive region includes a dielectric structure and a first electrode on or above a substrate, an organic functional layer structure on the first electrode in physical contact with the first electrode and the dielectric structure, and a second electrode in physical contact with the organic functional layer structure and above the dielectric structure, wherein the organic functional layer structure at least partly overlaps the dielectric structure in such a way that the part of the second electrode above the dielectric structure is free of a physical contact of the second electrode with the dielectric structure.