There is provided a photodetector element having a photoelectric conversion layer containing an aggregate of semiconductor quantum dots QD1 that contain a metal atom and containing a ligand L1 that is coordinated to the semiconductor quantum dot QD1, and a hole transport layer containing an aggregate of semiconductor quantum dots QD2 that contains a metal atom and containing a ligand L2 that is coordinated to the semiconductor quantum dot QD2, the hole transport layer being arranged on the photoelectric conversion layer, in which a band gap Eg2 of the semiconductor quantum dot QD2 is larger than a band gap Eg1 of the semiconductor quantum dot QD1, and a difference between the band gap Eg2 of the semiconductor quantum dot QD2 and the band gap Eg1 of the semiconductor quantum dot QD1 is 0.10 eV or more. There is also provided an image sensor including the photodetector element.

Stable perovskite films having substantially-no phase transition within a predetermined temperature range are disclosed. In the films, formation of carrier traps is suppressed. Thermally stable perovskite solar cells and light-emitting devices using the films are also disclosed.

Discussed is a tandem solar cell manufacturing method including etching a crystalline silicon substrate, whereby a solar cell can be obtained which does not have a pyramid-shaped defect on a surface of the substrate, inhibits the generation of a shunt through the substrate having excellent surface roughness properties, and can secure fill factor properties, the solar cell being capable of being obtained through the tandem solar cell manufacturing method. The method includes preparing a crystalline silicon substrate; performing an isotropic etching process of the substrate; and removing a saw damage on a surface of the substrate by performing an anisotropic etching process of the isotropically etched substrate.

An imaging device includes: a first electrode; a charge storage electrode disposed at a distance from the first electrode; a photoelectric conversion layer in contact with the first electrode and above the charge storage electrode, with an insulating layer between the charge storage electrode and the photoelectric conversion layer; and a second electrode on the photoelectric conversion layer. The portion of the insulating layer between the charge storage electrode and the photoelectric conversion layer includes a first region and a second region, the first region is formed with a first insulating layer, the second region is formed with a second insulating layer, and the absolute value of the fixed charge of the material forming the second insulating layer is smaller than the absolute value of the fixed charge of the material forming the first insulating layer.

An optical element includes a photoelectric conversion film and an inorganic substance-containing film containing at least one selected from the group consisting of a metal nitride and a metal oxynitride, in which the photoelectric conversion film contains a quantum dot or at least one compound semiconductor selected from the group consisting of a III-V group compound semiconductor, a II-VI group compound semiconductor, and a IV-IV group compound semiconductor, and the optical density of an inorganic substance-containing film is 0.5 or more per 1.0 μm of a film thickness at a wavelength of 1,550 nm.

The technology of this application relates to a cell assembly and a method for preparing a cell assembly. The cell assembly includes a first subcell, a second subcell adjacent to the first subcell, and a bottom electrode. Both the first subcell and the second subcell include a P-type layer and an N-type layer, and a light-harvesting layer located between the P-type layer and the N-type layer. The P-type layer of the first subcell is connected to the N-type layer of the second subcell by using the bottom electrode. A connection manner between subcells is provided. Compared with a current manner in which P1, P2, and P3 gaps are formed between subcells through cutting to implement interconnection, geometrical optical loss brought by interconnection between the subcells can be reduced.

A fingerprint sensing device includes a first substrate, a sensing element layer, a second substrate, a micro-structure layer, and a spacer layer. The sensing element layer is located on the first substrate and includes multiple sensing elements. The second substrate is located on the sensing element layer. The micro-structure layer is located between the second substrate and the sensing element layer, and includes multiple micro-lens structures and multiple dummy structures. Orthogonal projections of the micro-lens structures on the first substrate overlap orthogonal projections of the sensing elements on the first substrate. The spacer layer is located between the second substrate and the sensing element layer, and includes multiple main spacers. Each of the main spacers covers at least one of the dummy structures.

A photovoltaic device (10) is provided that comprises serially arranged photovoltaic device cells (10A, 10B). Each cell having a transparent electrode layer region electrical conductors (121A, . . . , 124A) forming an electric contact with the transparent electrode layer region, a photo-voltaic stack portion (14A, 14B) that extends over the transparent electrode region (11A, 11B) and over an insulated portion of the electrical conductors, a further electrode region (15A, 5B) that extends over the photovoltaic stack portion (14A,14B). A further electrode region (15A) of a photovoltaic device cell (10A) extends over electric contacts formed by exposed ends (12B1) of the electrical conductors of a subsequent photovoltaic device cell (10B).

There is provided a solid-state imaging device including a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

A photovoltaic device includes a semi-transparent substrate and at least one translucent photovoltaic cell. The photovoltaic cell includes a stack of layers disposed on the substrate, wherein the stack has apertures extending through it at least partially, contain a functionalizing agent and are uniformly distributed within the photovoltaic cell.