A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: ##STR00001## In Chemical Formula 1, each substituent is the same as defined in the detailed description.

An organic device includes at least one electrode, an insulating layer adjacent to the at least one electrode in a plan view, and an organic layer that is continuously in contact with an upper surface of the at least one electrode and an upper surface of the insulating layer. The organic layer contains a polymer of an organic material. The organic material contains a basic molecular skeleton and a polymerizable functional group. In the polymer, the organic material is polymerized through the polymerizable functional group.

An imaging device includes at least one first pixel electrode, at least one second pixel electrode, a photoelectric converter continuously covering upper surfaces of the at least one first pixel electrode and the at least one second pixel electrode, a first counter electrode facing the at least one first pixel electrode, a second counter electrode facing the at least one second pixel electrode, and a sealing layer continuously covering upper surfaces of the first and second counter electrodes. In a plan view, a first portion of an upper surface of the photoelectric converter in an interelectrode region between the first counter electrode and the second counter electrode is more depressed than a second portion of the upper surface of the photoelectric converter in an overlap region overlapping the first counter electrode or the second counter electrode. The sealing layer is in contact with the photoelectric converter in the interelectrode region.

An organic semiconductor detector for detecting radiation has an organic conducting active region, an output electrode and a field effect semiconductor device. The field effect semiconductor device has a biasing voltage electrode and a gate electrode. The organic conducting active region is connected on one side to the field effect semiconductor device and is connected on another side to the output electrode. The organic semiconductor detector has an option switching circuitry having a field effect semiconductor device and resistance.

According to one embodiment, a flexible substrate includes an insulating basement including an island-like portion and a plurality of belt portions, an organic insulating layer, and an electrical element and a projecting portion provided on the organic insulating layer and overlapping the island-like portion. The electrical element includes a common electrode, a first electrode located between the organic insulating layer and the common electrode, and an active layer located between the common electrode and the first electrode. The projecting portion is located on the first electrode and projects in a direction towards the common electrode from the first electrode.

An image sensor includes a substrate including a plurality of photoelectric conversion elements and a variable filter layer disposed on the substrate. The variable filter layer includes a plurality of first electrodes extending in a first direction, and having a first width in a second direction, a first electro-optical material layer disposed on the plurality of first electrodes, a light-transmitting electrode disposed on the first electro-optical material layer, a second electro-optical material layer disposed on the light-transmitting electrode, and a plurality of second electrodes disposed on the second electro-optical material layer, extending in the second direction, and having a second width in the first direction.

An imaging device including pixels each including: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the second electrode of each of the pixels being electrically connected to each other; and a transistor having a gate electrically connected to the first electrode. The imaging device further including voltage supply circuitry electrically connected to the second electrode, in which the voltage supply circuitry supplies a first voltage to the second electrode in an exposure period, the voltage supply circuitry supplies a second voltage to the second electrode in a non-exposure period, an a potential difference between the first electrode and the second electrode in the non-exposure period is less than a potential difference between the first electrode and the second electrode in the exposure period.

Method of making a current collecting grid for solar cells, including the steps of a) providing a continuous layer stack (1) on a substrate (8), the layer stack (1) including an upper (2) and a lower (3) conductive layer having a photoactive layer (4) interposed there between; b) selectively removing the upper conductive layer (2) and the photoactive layer (4) for obtaining a first contact hole (10) extending through the upper conductive layer (2) and photoactive layer (4) exposing the lower conductive layer (3); c) printing a front contact body (4) on the upper conductive layer (2) and a back contact body (5) in the first contact hole (10) on the lower conductive layer (3) and forming an electrically insulating first gap surrounding the back contact body (5) between the upper conductive layer (2) and the back contact body (2).

An exemplary embodiment of the present invention provides an infrared image sensor including: a sensor pixel connected with a data lead-out line and a scan line disposed on a surface of a substrate; a wavelength converter positioned in the sensor pixel and disposed in an internal movement path of infrared rays, including an anti-Stokes material that absorbs infrared rays and converts them into visible rays to emit them; and a photosensor part positioned in the sensor pixel to sense the visible rays converted by the wavelength converter.

There is provided a photovoltaic device that comprises a front electrode, a back electrode, and disposed between the front electrode and the back electrode, an electron transporter region comprising an electron transporter layer; a hole transporter region comprising a hole transporter layer, and a layer of perovskite semiconductor disposed between and in contact with the electron transporter layer and the hole transporter layer. The electron transporter region is nearest to the front electrode and the hole transporter region is nearest to the back electrode, and the electron transporter layer comprises any of a chalcogenide material and an organic material and has a thickness of at least 2 nm.