An optical sensor includes: a semiconductor layer including first and second regions; a gate electrode; a gate insulating layer including a photoelectric conversion layer; a voltage supply circuit; and a signal detection circuit connected to the first region. The photoelectric conversion layer has a photocurrent characteristic including first and second voltage ranges where an absolute value of a current density increases as an absolute value of a bias voltage increases, and a third voltage range where an absolute value of a rate of change of the current density relative to the bias voltage is less than in the first and second voltage ranges, The voltage supply circuit applies a predetermined voltage between the gate electrode and the second region such that the bias voltage falls within the third voltage range. The signal detection circuit detects an electrical signal corresponding to a change of a capacitance of the photoelectric conversion layer.

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed:

##STR00001##

In Chemical Formula 1, each substituent is the same as defined in the detailed description.

A solid-state imaging device according to the present disclosure includes a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range, and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.

The present technology relates to, in a photoelectric conversion element using a photoelectric conversion film, the photoelectric conversion element and a method of manufacturing the same, a solid state image sensor, an electronic device, and a solar cell, for enabling improvement of quantum efficiency. The photoelectric conversion element includes two electrodes constituting an anode and a cathode, and a photoelectric conversion layer arranged between the two electrodes, and at least one electrode side of the two electrodes is doped with an impurity at impurity density of 1e16/cm3 or more in the photoelectric conversion layer. The present technology can be applied to, for example, a solid state image sensor, an electronic device, a solar cell and the like.

A method for evaluating a single-photon detector signal includes duplicating the single-photon detector signal into a first and a second signal. The first signal is processed and the second signal is either not processed or is processed in a manner different from the first signal. A differential signal is formed between the unprocessed or differently processed second signal and the processed first signal. The differential signal is evaluated to determine pulse events.

An imaging element which is formed by sequentially stacking at least an anode, an anode-side buffer layer, a photoelectric conversion layer, and a cathode, in which the anode-side buffer layer includes a material having structural formula ##STR00001##
in which thiophene and carbazole are combined.

Method for determining oscillation parameters of turbo-machine blades consists in that when the blade tip travels in front of a sensor, reading values of a single pulsed signal formed by the sensor are obtained in a number that is not lower than that of unknown parameters of a harmonic or polyharmonic oscillation of the blade, the origin of a single pulsed signal readings obtained for each blade being synchronized with the blade tip position relative to the sensor according to a given level of the single pulsed signal; then the values of the harmonic or polyharmonic oscillation parameters of the blade are calculated with the use of the obtained values of the single pulsed signal reading origins and of the value of the turbo-machine shaft revolution period.

Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.

A method for packaging an organic photodetector includes providing a multilayer structure disposed on a portion of a substrate to form the organic photodetector; providing a casing having at least one wall and an open end, wherein the casing includes at least one aperture in at least one wall; sealing the open end of the casing with the substrate to enclose the multilayer structure in a volume such that the least one aperture is located in a path of radiation to an inactive region of the organic photodetector; evacuating the volume through the at least one aperture; and closing the at least one aperture after evacuating the volume to form a detector package. The multilayer structure includes a thin film transistor (TFT) array, an organic photodiode disposed on the TFT array, and a scintillator layer disposed on the organic photodiode. An imaging system including the detector package is also presented.

An optoelectronic assembly including an optically active region configured for emitting and/or absorbing light, and an optically inactive region configured for component-external contacting of the optically active region is provided. The optically inactive region includes a dielectric structure and a first electrode on or above a substrate, an organic functional layer structure on the first electrode in physical contact with the first electrode and the dielectric structure, and a second electrode in physical contact with the organic functional layer structure and above the dielectric structure, wherein the organic functional layer structure at least partly overlaps the dielectric structure in such a way that the part of the second electrode above the dielectric structure is free of a physical contact of the second electrode with the dielectric structure.