Disclosed is a photoelectric conversion element for converting light into electric energy, including a first electrode, a second electrode, and at least one organic layer existing therebetween, the organic layer containing a compound represented by the general formula (1): ##STR00001##
wherein R.sup.1 to R.sup.4 are alkyl groups, cycloalkyl groups, alkoxy groups, or arylether groups, which may be respectively the same or different; R.sup.5 and R.sup.6 are halogens, hydrogens, or alkyl groups, which may be respectively the same or different; R.sup.7 is an aryl group, a heteroaryl group, or an alkenyl group; M represents an m-valent metal and is at least one selected from boron, beryllium, magnesium, aluminum, chromium, iron, nickel, copper, zinc, and platinum; L is selected from halogen, hydrogen, an alkyl group, an aryl group, and a heteroaryl group; and m is in a range of 1 to 6 and, when m−1 is 2 or more, each L may be the same or different.

A compound represented by Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed.

##STR00001##

In Chemical Formula 1, each substituent is the same as defined in the detailed description.

A method for constructing a solar rectenna array by growing carbon nanotube antennas between lines of metal, and subsequently applying a bias voltage on the carbon nanotube antennas to convert the diodes on the tips of the carbon nanotube antennas from metal oxide carbon diodes to geometric diodes. Techniques for preserving the converted diodes by adding additional oxide are also described.

The invention relates to a device for detecting electromagnetic radiation, said device comprising at least one row of photoresistors (45), each photoresistor comprising an active portion comprising organic semiconductor materials.

A compound is represented by Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device include the compound.

##STR00001##

In Chemical Formula 1, each substituent is the same as defined in the detailed description.

An imaging system includes a light source that, in operation, emits an emitted light containing a near-infrared light in a first wavelength region, an image sensor, and a double-band pass filter that transmits a visible light in at least a part of a wavelength region out of a visible region and the near-infrared light in the first wavelength region. The image sensor includes light detection cells, a first filter that selectively transmits the near-infrared light in the first wavelength region, second to fourth filters that selectively transmit lights in second to fourth wavelength regions, respectively, which are contained in the visible light, and an infrared absorption filter. The infrared absorption filter faces the second to fourth filters and absorbs the near-infrared light in the first wavelength region.

An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).

##STR00001##

A perovskite-based solar cell comprising a transparent electrode disposed on a buffer layer that protects the perovskite from damage during the deposition of the electrode is disclosed. The buffer material is deposited using either low-temperature atomic-layer deposition, chemical-vapor deposition, or pulsed chemical-vapor deposition. In some embodiments, the perovskite material is operative as an absorption layer in a multi-cell solar-cell structure. In some embodiments, the perovskite material is operative as an absorption layer in a single-junction solar cell structure.

A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

An organic photoelectronic device may include a photoelectronic conversion layer between a first electrode and a second electrode and a buffer layer on the photoelectronic conversion layer. The photoelectronic conversion layer may be between a first electrode and a second electrode, and the buffer layer may be between the first electrode and the photoelectronic conversion layer. The photoelectronic conversion layer may include at least a first light absorbing material and a second light absorbing material configured to provide a p-n junction. The buffer layer may include the first light absorbing material and a non-absorbing material associated with a visible wavelength spectrum of light. The non-absorbing material may have a HOMO energy level of about 5.4 eV to about 5.8 eV. The non-absorbing material may have an energy bandgap of greater than or equal to about 2.8 eV.