There is provided an image sensor including: a plurality of first electrodes respectively formed within a plurality of pixel areas, the pixel areas being formed on a substrate; a protection layer formed on an upper surface of the substrate and including a plurality of contact holes respectively exposing the first electrodes of the pixel areas; a plurality of auxiliary electrodes respectively contacting with the first electrodes through the contact holes and extending to an upper surface of the protection layer of the pixel area; a photoconductive layer formed on both the first electrodes and on the auxiliary electrodes; and a second electrode formed on the photo conductive layer.

A system and method for a multi-sensor pixel architecture for use in a digital imaging system is described. The system includes at least one semiconducting layer for absorbing radiation incident on opposites of the at least one semiconducting layer along with a set of electrodes on one side of the semiconducting layer for transmitting a signal associated with the radiation absorbed by the semiconducting layer.

An imaging device with excellent imaging performance is provided. The imaging device has a first circuit including a first photoelectric conversion element and a second circuit including a second photoelectric conversion element. The second circuit is shielded from light. In the imaging device, a current mirror circuit in which a transistor connected to the second photoelectric conversion element serves as an input transistor and a transistor connected to the first photoelectric conversion element serves as an output transistor is formed. With such a configuration, the amount of photocurrent in the first circuit from which the contribution of the dark current of the first photoelectric conversion element has been excluded can be detected.

A radiation detector may include: a common electrode; a thin film transistor (TFT) array; a photoconductor material layer disposed between the common electrode and the TFT array; and a diffusion stop layer, disposed between the common electrode and the TFT array, on a location corresponding to a connecting portion where the common electrode is connected to a bias voltage supply source, wherein the diffusion stop layer prevents a metal included in the connecting portion from diffusing to the photoconductor material layer.

A process for fabricating an organic photodetector is presented. The process includes providing an array of thin film transistor assemblies, each thin film transistor assembly including a first electrode disposed on a thin film transistor; disposing an organic semiconductor layer on the array; disposing a second electrode layer including a first inorganic material on the organic semiconductor layer through a shadow mask to form a first etch stop layer; and removing portions of the organic semiconductor layer unprotected by the first etch stop layer using a dry etching process to form a multilayered structure. An organic photodetector, for example an organic x-ray detector fabricated by the process is further presented. An x-ray system including the organic x-ray detector is also presented.

A method of producing a thin film transistor includes: forming a gate electrode; forming a gate insulating film that contacts the gate electrode; forming, by a liquid phase method, an oxide semiconductor layer arranged facing the gate electrode with the gate insulating film provided therebetween, the oxide semiconductor layer including a first region and a second region, the first region being represented by In.sub.(a)Ga.sub.(b)Zn.sub.(c)O.sub.(d), the second region being represented by In.sub.(e)Ga.sub.(f)Zn.sub.(g)O.sub.(h), and the second region being located farther from the gate electrode than the first region; and forming a source electrode and a drain electrode that are arranged apart from each other and are capable of being conductively connected through the oxide semiconductor layer.

Provided is a detector that includes a scintillator, a common electrode, a pixel electrode, and a plurality of insulating layers, with a plurality of nano-pillars formed in the plurality of insulating layers, a nano-scale well structure between adjacent nano-pillars, with a-Se separating the adjacent nano-pillars, and a method for operation thereof.

An X-ray detector includes a substrate, a plurality of pixel electrodes on the substrate, a photoconductor covering the plurality of pixel electrodes, or a common electrode on the photoconductor. The photoconductor includes at least two photoconductor layers. The photoconductor may also include a current resistance layers disposed between the at least two photoconductor layers. The current resistance layer is configured to reduce current flow between the at least two photoconductor layers.

A radiation detection element includes plural hexagonal pixels arrayed in a honeycomb form and having sensor portions that generate charges due to radiation being irradiated. The radiation detection element includes charge accumulating capacitors that accumulate generated charges, and TFT switches for reading-out the charges accumulated at the capacitors. The radiation detection element includes scan lines disposed parallel in a first direction, to which switching signals that control switching of the TFT switches are outputted; and data lines disposed parallel in a second direction intersecting the first direction, to which charges read-out by the TFT switches are outputted. The TFT switches are disposed to be, in the first direction, connected to the data lines from alternately different sides of the data line, and such that an arrangement of source electrodes and drain electrodes of the TFT switches is the same in the first direction.

A radiographic detection substrate, a manufacture method thereof, and a radiographic detection device are provided. The radiographic detection substrate includes a substrate; and a thin film transistor and a signal storage unit which are formed on the substrate; the thin film transistor includes a gate electrode, an insulating layer, an active layer, a source electrode, a drain electrode and a passivation layer which are sequentially formed on the substrate; the signal storage unit includes a storage capacitor, the storage capacitor includes a first electrode and a second electrode, the first electrode is formed on the insulating layer and lapped with the drain electrode, the second electrode is connected to a ground line; the passivation layer is formed on the source electrode, the drain electrode, the first electrode and the ground line. The present invention efficiently decreases the number of masking processes by at least one connection method selected from lapping the first electrode and the drain electrode, connecting the second electrode to the ground line through the first via hole, and connecting the third electrode to the first electrode via the second via hole, to simplify the manufacture process of the radiographic detection substrate and reduce the manufacture costs.