An imaging device with excellent imaging performance is provided. The imaging device has a first circuit including a first photoelectric conversion element and a second circuit including a second photoelectric conversion element. The second circuit is shielded from light. In the imaging device, a current mirror circuit in which a transistor connected to the second photoelectric conversion element serves as an input transistor and a transistor connected to the first photoelectric conversion element serves as an output transistor is formed. With such a configuration, the amount of photocurrent in the first circuit from which the contribution of the dark current of the first photoelectric conversion element has been excluded can be detected.

Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps. The method also includes growing a passivation oxide layer on a top of the polished first surface and depositing patterned metal contacts on a top of the passivation oxide layer. The method further includes applying a protecting layer on the patterned deposited metal contacts, etching a second surface of the semiconductor and applying a monolithic cathode electrode on the etched second surface of the semiconductor. The method additionally includes removing the protecting layer from the patterned metal contacts on the first surface, wherein the patterned metal contacts are formed from one of (i) reactive metals and (ii) stiff-rigid metals for producing inter-band energy-levels in the passivation oxide layer.

A solid-state radiation detector comprising a photosensitive sensor comprises photosensitive elements that are organized in a matrix, and a light generator whose purpose is to optically wipe the photosensitive elements. The light generator comprises: an electroluminescent layer that is distributed over the surface of the sensor; at least one electrode that continuously covers the electroluminescent layer and in which electrons may flow, the light emitted by the electroluminescent layer being capable of passing through the electrode; and additional electrical conductors that are in electrical contact with the electrode, the additional electrical conductors forming branches that extend over the surface of the electrode, and being spatially distributed across the surface of the electrode.

The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.

A radiographic image detector includes a phosphor layer, a heat shield layer, and a photoelectric converter in this order, wherein the heat shield layer has a thickness T (m) and a thermal conductivity C (W/m.Math.K) satisfying that C/T is from 0.004 to 5.

A semiconductor device includes a first semiconductor layer of a first conductivity type having a primary surface and having a sensor therein, a second semiconductor layer of a second conductivity type having a circuit element formed therein. The second semiconductor layer is formed at a same side of the primary surface of the first semiconductor layer. The device further includes an insulating layer formed between the first semiconductor layer and the second semiconductor layer. The insulating layer is disposed on the primary surface of the first semiconductor layer and surrounds the circuit element, and includes a charge-attracting semiconductor pattern of the first conductivity type that is disposed near the circuit element so as to attract electrical charges generated in the insulating layer.

Disclosed is an image sensor, which is characterized by increased strength of adhesion between a photoconductive layer and a front electrode made of aluminum, and which includes a first electrode composed of aluminum, copper or an aluminum-copper alloy on a substrate, a buffer layer formed on the first electrode, a photoconductive layer formed on the buffer layer, and a second electrode formed on the photoconductive layer, wherein the buffer layer includes a material having higher strength of adhesion than the photoconductive layer to the first electrode.

A radiation detector (10) includes a semiconductor element (1) for generating positive holes and electrons, a cathode (2) formed on a first surface of the semiconductor element (1) and a plurality of segmented anodes (3) formed on a second surface of the semiconductor element (1), the second surface being in opposed relation to the first surface. Additionally, a plurality of segmented steering electrodes (5a) are positioned adjacent the plurality of segmented anodes (3). Moreover, a plurality of doping atoms are located above at least a portion of the plurality of segmented anodes (3) for reducing the voltage difference between the plurality of segmented anodes (3) and the plurality of segmented steering electrodes (5a).

An X-ray detector may include a silicon substrate including a first area and a second area; a plurality of pixels in the first area configured to detect X-rays; a control pad in the second area configured to supply a common control signal to the plurality of pixels; and/or a power supply pad in the first area configured to supply a power supply voltage to groups of pixels grouped from among the plurality of pixels.

A common interconnect ring is provided at a periphery of a portion used to form a TFT array of an X-ray flat panel detector, and an X-ray flat panel detector TFT array substrate connected to signal lines and scanning lines via pairs of two protection diodes connected in parallel and having mutually-reverse polarities is manufactured. When inspecting the X-ray flat panel detector TFT array substrate, the same reference bias voltage as the amplifier of a detection circuit is applied from an external voltage application pad provided at the vicinity of a connection unit for the common interconnect ring and the protection diodes on the same side of the signal lines, a signal is provided to a scanning line connection pad to switch the thin film transistor ON, and an electrical signal flowing through the signal line is read from a signal line connection pad.