A micro LED display includes a first conductive-type electrode; a plurality of micro LEDs that are separately formed on the first conductive-type electrode and each configured to emit ultraviolet light with a wavelength of 405 nm or less; and second conductive-type electrodes formed on the plurality of micro LEDs, respectively. The micro LED display further includes a reflective barrier member erected between the plurality of micro LEDs to reflect light from side surfaces of the micro LEDs; a film-like wiring substrate having a wiring structure that is connected with the second conductive-type electrodes of three micro LEDs that are adjacent to each other, out of the plurality of micro LEDs, so as to constitute one pixel; and a film-like wavelength conversion layer provided on the wiring substrate, and including phosphors that perform wavelength conversion of respective light from the three micro LEDs into red, green, and blue colors. The side surfaces of the micro LEDs are formed into inclined surfaces such that widths of the micro LEDs gradually decrease from the first conductive-type electrode toward the second conductive-type electrodes. The reflective barrier member is erected parallel to a stacking direction of the plurality of micro LEDs and up to a height equal to the micro LEDs.

An infrared LED element includes: a conductive support substrate; and a semiconductor laminate and includes a material that can be lattice-matched with InP, in which the semiconductor laminate includes: a first semiconductor layer indicating a first conductivity type; an active layer disposed on an upper layer of the first semiconductor layer; a second semiconductor layer disposed on an upper layer of the active layer and indicating a second conductivity type; and a third semiconductor layer disposed on an upper layer of the second semiconductor layer and contains Al.sub.aGa.sub.bIn.sub.cAs indicating the second conductivity type, the third semiconductor layer has an uneven part on a surface opposite to a side on which the second semiconductor layer is positioned, and the third semiconductor layer has band gap energy lower than band gap energy of the second semiconductor layer and higher than band gap energy of the active layer.

Solid state transducers with state detection, and associated systems and methods are disclosed. A solid state transducer system may include a support substrate that carries a solid state emitter and a state device. The solid state emitter and the state device may be stacked along a common axis. Further, the state device may be positioned to detect a state of the solid state emitter and/or an electrical path of which the solid state emitter forms a part. The solid state emitter may include a first semiconductor component, a second semiconductor component, and an active region between the first and second semiconductor components. The state device may include a state-sensing component having a composition different than that of the active region and the first and second semiconductor components. In some embodiments, the state-sensing component may include an electrostatic discharge protection device, a thermal sensor, a photosensor, or a combination thereof.

Sensors and methods of operating sensors are described herein. One sensor includes a number of III-nitride strain sensitive devices and a number of passive electrical components that connects each of them to one of the III-nitride strain sensitive devices.

An apparatus for defrosting an evaporator in a refrigeration system using an infrared emitting diode includes i) a frost detection sensor configured to receive a frost sensing signal from an output part of a control processor and to transmit a frost detection signal into an input part of a control processor, wherein the frost detection signal is generated by projecting infrared to the frost and receiving reflection-infrared from the frost; ii) a control processor configured to convert the frost detection signal into a digital signal in the signal converting part, to evaluate if the frost detection signal is higher than a threshold value which is set from a signal setting part, and to transmit the operation signal to the defroster, as well as the display signal to the signal display part; and iii) a defroster.

A multi-junction optoelectronic device and method of manufacture are disclosed. The method comprises providing a first p-n structure on a substrate, wherein the first p-n structure comprises a first base layer of a first semiconductor with a first bandgap such that a lattice constant of the first semiconductor matches a lattice constant of the substrate, and wherein the first semiconductor comprises a Group III-V semiconductor. The method includes providing a second p-n structure, wherein the second p-n structure comprises a second base layer of a second semiconductor with a second bandgap, wherein a lattice constant of the second semiconductor matches a lattice constant of the first semiconductor, and wherein the second semiconductor comprises a Group IV semiconductor. The method also includes lifting off the substrate the multi-junction optoelectronic device having the first p-n structure and the second p-n structure, wherein the multi-junction optoelectronic device is a flexible device.

A method of depositing an unpackaged semiconductor die (die) onto a substrate. The method includes writing a latent image on a photosensitive drum. The latent image represents an outline for the die to be placed onto the substrate. The photosensitive drum is configured to have an electro-static charge and the die is transferred from the developing unit to the photosensitive drum so as to deposit the die onto the substrate according to the outline.

Solid state transducers with state detection, and associated systems and methods are disclosed. A solid state transducer system in accordance with a particular embodiment includes a support substrate and a solid state emitter carried by the support substrate. The solid state emitter can include a first semiconductor component, a second semiconductor component, and an active region between the first and second semiconductor components. The system can further include a state device carried by the support substrate and positioned to detect a state of the solid state emitter and/or an electrical path of which the solid state emitter forms a part. The state device can be formed from at least one state-sensing component having a composition different than that of the first semiconductor component, the second semiconductor component, and the active region. The state device and the solid state emitter can be stacked along a common axis. In further particular embodiments, the state-sensing component can include an electrostatic discharge protection device, a thermal sensor, or a photosensor.

A terahertz modulator based on low-dimension electron plasma wave, a manufacturing method thereof, and a high speed modulation method are provided. The terahertz modulator includes a plasmon and a cavity. The present disclosure discloses the resonance absorption mechanism caused by collective oscillation of electrons (plasma wave, namely, the plasmon). In order to enhance the coupling strength between the terahertz wave and the plasmon, a GaN/AlGaN high electron mobility transistor structure having a grating gate is integrated in a terahertz Fabry-Prot cavity, and a plasmon polariton is formed arising from strong coupling of the plasmon and a cavity mode.

A method of processing an engineered substrate structure includes providing an engineered substrate structure including a polycrystalline substrate and an engineered layer encapsulating the polycrystalline substrate, forming a sacrificial layer coupled to the engineered layer, joining a solid state device structure to the sacrificial layer, forming one or more channels in the solid state device structure by removing one or more portions of the solid state device structure to expose one or more portions of the sacrificial layer, flowing an etching chemical through the one or more channels to the one or more exposed portions of the sacrificial layer, and dissolving the sacrificial layer by interaction between the etching chemical and the sacrificial layer, thereby separating the engineered substrate structure from the solid state device structure.