The present invention provides method for manufacturing an AMOLED backplane and a structure thereof. The method uses a drain terminal of a drive TFT to serve as an anode of AMOLED the anode, so that compared to the prior art, the steps of forming a planarization layer and an anode layer are eliminated and also, the same half-tone masking operation is used to form a pixel definition layer and photo spacers, whereby the method for manufacturing the AMOLED backplane according to the present invention requires only six masking operations and saves three masking operations compared to the prior art, thereby effectively simplifying the manufacturing process, improving manufacturing efficiency, and saving cost. The present invention provides a structure of an AMOLED backplane, which has a simple structure, is easy to manufacture, and has a low cost.

The invention provides a method for forming a surface oxide layer on an amorphous silicon including steps: using a HF acid to clean a surface of the amorphous silicon; using a water to clean the surface of the amorphous silicon being cleaned by the HF acid; drying the surface of the amorphous silicon after being cleaned by the water; using an extreme ultraviolet lithography to form a first oxide layer on the surface of the amorphous silicon after being dried; using an oxidizing solution to clean the surface of the amorphous silicon with the first oxide layer to thereby form a second oxide layer; and drying the surface of the amorphous silicon with the second oxide layer. By using the extreme ultraviolet lithography to form the first oxide layer, the surface of the amorphous silicon is given with strong hydrophilicity and therefore the distribution of water would be uniform.

A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3), a semiconductor-layer thin film (4) and a passivation-shielding-layer thin film (5) successively; forming a pattern (5) that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c) and a drain electrode (4b). The source electrode (4c) and the drain electrode (4b) are disposed on two sides of the active layer (4a) respectively and in a same layer as the active layer (4a). The manufacturing method can reduce the number of patterning processes and improve the performance of the thin film transistor in the array substrate.

A semiconductor device (100) includes a substrate (11), a first TFT (10), and a second TFT (20). The first TFT includes a first semiconductor layer (12) that is supported by the substrate, a first gate electrode (14) that is formed on the first semiconductor layer and overlaps with the first semiconductor layer with a first gate insulating layer (13) interposed therebetween, a first insulating layer (16) that covers the first gate electrode, and a first source electrode (17s) and a first drain electrode (17d) that are formed on the first insulating layer and are connected to the first semiconductor layer. The second TFT includes a second gate electrode (22) that is supported by the substrate, a second semiconductor layer (25) that contains an oxide semiconductor and is formed overlapping with the second gate electrode with a second gate insulating layer (23) interposed therebetween, and a second source electrode (24s) and a second drain electrode (24d) that are formed between the second gate insulating layer and the second semiconductor layer. The first semiconductor layer and the second gate electrode are both formed from a same semiconductor film (52).

A semiconductor device, comprising a base substrate, a buffer layer and a polysilicon layer film, wherein the base substrate, the buffer layer and the polysilicon layer film being laminated sequentially, and wherein regularly arranged first grooves being provided on a surface of the buffer layer contacting the polysilicon film; the polysilicon film being formed, by applying crystallization treatment, through an optical annealing process, to an amorphous silicon film on the buffer layer having regularly arranged first grooves.

A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

An array substrate, a manufacturing method thereof, a display device, a thin-film transistor (TFT) and a manufacturing method thereof are disclosed. The method for manufacturing the TFT comprises: forming a pattern of an active layer and a gate insulating layer provided with a metal film on a base substrate patterning the metal film by one patterning process, and forming patterns of a gate electrode a source electrode, a drain electrode a gate line and a data line; forming a passivation layer on the base substrate; patterning the passivation layer by one patterning process, and forming a source contact hole, a drain contact hole and a bridge structure contact hole; and forming a transparent conductive film on the base substrate, and removing partial transparent conductive film to form a source contact portion, a drain contact portion, a pixel electrode and a bridge structure.

A method of manufacturing a display panel having a plurality of lightly doped drain thin film transistors arranged as a matrix includes forming a semiconductor pattern with a predetermined shape on a substrate; forming a dielectric layer covering the semiconductor pattern on the substrate; forming a metal layer on the dielectric layer; forming a photoresist patterns smaller than the semiconductor pattern on the metal layer above the semiconductor pattern; etching the metal layer to form a gate electrode smaller than the photoresist pattern; doping high concentration ions by using the photoresist pattern as a mask to form a pair of highly doped regions on the semiconductor pattern not covered by the photoresist pattern; removing the photoresist pattern; and doping low concentration ions by using the gate electrode as a mask to form a pair of lightly doped regions between the highly doped regions and a part of the semiconductor pattern.

A method of forming an LTPS TFT substrate includes: Step 1: providing a substrate and depositing a buffer layer; Step 2: depositing an a-Si layer; Step 3: depositing and patterning a silicon oxide layer; Step 4: taking the silicon oxide layer as a photomask and annealing the a-Si layer with excimer laser, so that the a-Si layer crystalizes and turns into a poly-Si layer; Step 5: forming a first poly-Si region and a second poly-Si region; Step 6: defining a heavily N-doped area and a lightly N-doped area on the first and second poly-Si regions, and forming an LDD area; Step 7: depositing and patterning a gate insulating layer; Step 8: forming a first gate and a second gate; Step 9: forming via holes; and Step 10: forming a first source/drain and a second source/drain.

A preparation method of a poly-silicon thin film transistor (TFT) array substrate and an array substrate thereof are provided. The preparation method includes: forming a photoresist layer on a poly-silicon layer, and exposing and developing the photoresist layer with a gray tone mask to form patterns of a photoresist completely-reserved region, a photoresist partially-reserved regions and a photoresist completely-removed region; removing part of the poly-silicon layer located in the photoresist completely-removed region, to form patterns of active layers; ashing the photoresist so as to expose part of the active layer located in the photoresist partially-reserved regions and inject P+ions of high concentration into the part of the active layer, to form doping regions of patterns of source-drain electrodes of a P-type TFT; and stripping off remaining photoresist.