A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

A method of manufacturing a low temperature polycrystalline silicon thin film and a thin film transistor, a thin film transistor, a display panel and a display device are provided. The method includes: forming an amorphous silicon thin film (01) on a substrate (1); forming a pattern of a silicon oxide thin film (02) covering the amorphous silicon thin film (01), a thickness of the silicon oxide thin film (02) located at a preset region being larger than that of the silicon oxide thin film (02) located at other regions; and irradiating the silicon oxide thin film (02) by using excimer laser to allow the amorphous silicon thin film (01) forming an initial polycrystalline silicon thin film (04), the initial polycrystalline silicon thin film (04) located at the preset region being a target low temperature polycrystalline silicon thin film (05). The polycrystalline silicon thin film has more uniform crystal size.

A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 m to about 2 m, and a length of the channel of the third transistor is in a range of about 1 m to about 2.5 m.

A display device according to the present disclosure includes: a thin film transistor with a bottom gate structure and a thin film transistor with a top gate structure on a same substrate. A gate electrode of the thin film transistor with the top gate structure is provided in a same layer as a wire layer. A method of manufacturing a display device according to the present disclosure, the display device including a thin film transistor with a bottom gate structure and a thin film transistor with a top gate structure on a same substrate, includes: forming a gate electrode of the thin film transistor with the top gate structure in a same layer as a wire layer.

The present invention is equipped with: a substrate (10) that has a surface upon which a drive circuit containing a TFT (20) is formed; a planarizing layer (30) that makes the surface of the substrate (10) planar by covering the drive circuit; and an organic light emitting element (40) that is provided with a first electrode (41) formed upon the surface of the planarization film and connected to the drive circuit, an organic light emitting layer (43) formed upon the first electrode, and a second electrode (44) formed upon the organic light emitting layer. In addition, the planarizing layer (30) includes a first inorganic insulating layer (31) and an organic insulating layer (32) that are layered upon the drive circuit, and the surface of the organic insulating layer (32) is formed with an arithmetic mean roughness Ra of no more than 50 nm.

A novel semiconductor device is provided. The semiconductor device combines a lateral-channel transistor and a vertical-channel transistor. The lateral-channel transistor is employed as a p-channel transistor and the vertical-channel transistor is employed as an n-channel transistor to achieve a CMOS semiconductor device. An opening is provided in the insulating layer in a region overlapping with a gate electrode of the lateral-channel transistor, and the vertical-channel transistor is formed in the opening. An oxide semiconductor is used for a semiconductor layer of the vertical-channel transistor.

A display device according to the present disclosure includes: a thin film transistor with a bottom gate structure and a thin film transistor with a top gate structure on a same substrate. A gate electrode of the thin film transistor with the top gate structure is provided in a same layer as a wire layer. A method of manufacturing a display device according to the present disclosure, the display device including a thin film transistor with a bottom gate structure and a thin film transistor with a top gate structure on a same substrate, includes: forming a gate electrode of the thin film transistor with the top gate structure in a same layer as a wire layer.

A method of providing a display device includes providing a preliminary active layer, providing a preliminary insulation layer on the preliminary active layer, providing a doped area of the preliminary active layer, the providing of the doped area including providing impurities through the preliminary insulation layer on the preliminary active layer and to a portion of the preliminary active layer corresponding to the doped area, providing removal of the preliminary insulation layer from the preliminary active layer having the doped area, and providing crystallizing of the preliminary active layer having the doped area, the providing of the crystallizing including irradiating a laser to the preliminary active layer having the doped area to define an active layer of the display device which has the doped area.

A display device includes a substrate, a first active layer on the substrate, a first insulation layer on the first active layer, a first gate electrode on the first insulation layer, the first gate electrode overlapping the first active layer, a second insulation layer on the first gate electrode, a second active layer on the second insulation layer, a first capacitor electrode on the second insulation layer, the first capacitor electrode overlapping the first gate electrode, a third insulation layer on the second active layer and the first capacitor electrode, a second gate electrode on the third insulation layer, the second gate electrode overlapping the second active layer, and a second capacitor electrode on the third insulation layer, the second capacitor electrode overlapping the first gate electrode and electrically connected to the first capacitor electrode.

A method for making a thin film transistor device includes forming a semiconductor film on a flexible substrate comprising a thin ribbon of refractory material that does not degrade when heated to temperatures greater than about 750 C. The semiconductor film is crystallized by heating the semiconductor film and the flexible substrate to at least about 750 C. A dielectric material is deposited on the crystallized semiconductor film. Gate, source, and drain electrodes are formed on the dielectric material.