The disclosure describes various aspects of monolithic integration of different light emitting structures on a same substrate. In an aspect, a device for light generation is described having a substrate with one or more buffer layers made a material that includes GaN. The device also includes light emitting structures, which are epitaxially grown on a same surface of a top buffer layer of the substrate, where each light emitting structure has an active area parallel to the surface and laterally terminated, and where the active area of different light emitting structures is configured to directly generate a different color of light. The device also includes a p-doped layer disposed over the active area of each light emitting structure and made of a p-doped material that includes GaN. The device may be part of a light field display and may be connected to a backplane of the light field display.

A method for producing a growth substrate (1) is specified, the method comprising the following steps: providing a substrate (2) with a main surface (3), applying a semiconductor layer (4) comprising a nitride compound semiconductor material to the main surface (3) of the substrate (2), inserting of impurity atoms of a first type into the semiconductor layer (4) by ion implantation, tempering of the semiconductor layer (4) after inserting the impurity atoms of the first type.

A growth substrate and a radiation-emitting semiconductor chip are also specified.

A GaN based LED, with an active region of the LED containing one or more quantum wells (QWs), with the QWs separated by higher energy barriers, with some of the barriers doped and some of the barriers not doped, may be driven at high data rates with low drive current densities. Preferably the barriers that are not doped are the barriers closest to one side of a p region or an n region of the LED. With Mg doping, preferably the barriers that are not doped are the barriers closest to the p region of the LED.

A display device includes: a substrate having an emission area and a non-emission area; a first bank in the non-emission area of the substrate and having an opening; electrodes on the first bank and spaced apart from each other; a second bank on the electrodes; and light emitting elements on the second bank between the electrodes. The second bank has a first area overlapping the light emitting elements and a second area in the opening in the first bank.

A micro light-emitting diode device includes a substrate, a micro light-emitting diode, and a transparent top electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type GaN layer, an n-type GaN layer above the p-type GaN layer, an n-doped In.sub.xAl.sub.(1-x)N layer above and in contact with the n-type GaN layer, and an active layer between the p-type GaN layer and the n-type GaN layer. x is a positive number smaller than 0.5. The transparent top electrode covers and is in contact with the n-doped In.sub.xAl.sub.(1-x)N layer. A refractive index of the n-doped In.sub.xAl.sub.(1-x)N layer is smaller than a refractive index of the n-type GaN layer. A sum of the thicknesses of the n-type GaN layer and the n-doped In.sub.xAl.sub.(1-x)N layer is greater than a sum of the thicknesses of the active layer and the p-type GaN layer.

An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

A light emitting element includes: a first light emitting part including: a first nitride semiconductor layer containing a first conductivity type impurity, a second nitride semiconductor layer containing a second conductivity type impurity, and a first active layer positioned between the first nitride semiconductor layer and the second nitride semiconductor layer; a second light emitting part positioned above the second nitride semiconductor layer, the second light emitting part including: a third nitride semiconductor layer, a fourth nitride semiconductor layer containing a second conductivity type impurity, and a second active layer positioned between the third nitride semiconductor layer and the fourth nitride semiconductor layer. The third nitride semiconductor layer includes: a first layer that contains at least one selected from the group consisting of Be, Mg, Ca, Fe, Zn, and C, a second layer, and a third layer.

An inorganic light emitting diode is disclosed. The inorganic light emitting diode includes a first semiconductor layer, a second semiconductor layer having a light emitting surface composed of four sides, an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode coupled to the first semiconductor layer, and a second electrode coupled to the second semiconductor layer, wherein the light emitting surface has a trapezoid shape in which two opposing sides are symmetric with respect to each other.

A light-emitting element includes a first n-side semiconductor layer, a first active layer, a first p-side semiconductor layer, a second n-side semiconductor layer, a second active layer, and a second p-side semiconductor layer, each made of a nitride semiconductor. The second n-side semiconductor layer includes first to third layers. The first layer includes indium and gallium and has a first n-type impurity concentration. The second layer includes indium and gallium and has a second n-type impurity concentration less than the first n-type impurity concentration. A value of a composition ratio of indium in the second layer is less than a value of a composition ratio of indium in the first layer. A thickness of the second layer is greater than a thickness of the first layer. The third layer includes gallium and has a third n-type impurity concentration less than the second n-type impurity concentration.

A light-emitting structure includes an n-type layer, an active layer, and a p-type layer. The active layer has N quantum well structure periods, each of the N quantum-well structure periods has a well layer and at least one barrier layer. The N quantum-well structure periods include a first light-emitting section and a second light-emitting section. The first light-emitting section is closer to the n-type layer than the second light-emitting section. A method for producing the light-emitting structure, and a light-emitting device that has the light-emitting structure are also disclosed.