An integrated structure of a crystal resonator and a control circuit (110) and an integrated method therefor. Integration of the crystal resonator with the control circuit (110) is accomplished by forming, in a device wafer (100) containing the control circuit, a lower cavity (120) with an opening exposed at a back side of the device wafer (100), forming a piezoelectric vibrator (500) on the back side of the device wafer (100) and electrically connecting the piezoelectric vibrator (500) to the control circuit (110) in the device wafer (100) from the back side of the device wafer (100). The crystal resonator is more compact in size, less power-consuming and easier to integrate with other semiconductor components with a higher degree of integration.

A piezoelectric element includes a piezoelectric layer, a first electrode layer, a second electrode layer, and a coupling electrode. At least a portion of the second electrode layer faces the first electrode layer with the piezoelectric layer interposed therebetween. The second electrode layer includes a coupling area. The coupling area meets a through hole in a region of the second electrode layer not facing the first electrode layer. The coupling electrode is on the coupling area. Between the coupling area and the surface of the second electrode layer on the piezoelectric layer side excluding the coupling area, the difference in position is about 5 nm or less.

The present disclosure provides a piezoelectric element, a piezoelectric vibrator, and a manufacturing method thereof, and an electronic device, and the present disclosure relates to the field of piezoelectric technologies. In the present disclosure, the piezoelectric element is provided with a first electrode and a second electrode positioned on the first electrode. The second electrode is provided with an opening where the first electrode is exposed. A piezoelectric structure is further arranged in the piezoelectric element. The piezoelectric structure includes a first piezoelectric portion and a second piezoelectric portion arranged around the first piezoelectric portion. The first piezoelectric portion is arranged in the opening and is in contact with the first electrode, the second piezoelectric portion is arranged on a side of the second electrode away from the first electrode, and the second piezoelectric portion has orientation.

A multilayer ultrasonic transducer of an embodiment includes: a plurality of stacked oscillators; external electrodes disposed on outer exposed surfaces of two oscillators disposed in the outermost layers out of the plurality of oscillators; and a plurality of internal electrodes each disposed between two of the plurality of oscillators. There are provided electrode regions in which the plurality of internal electrodes are arranged such that the number of layers of the internal electrodes in a direction in which the oscillators are stacked gradiently increases from an inner region toward an outer peripheral region of the plurality of oscillators, and ultrasonic waves emitted from the plurality of oscillators are focused toward at least the inner region.

In an embodiment, a multilayer piezoelectric element includes a multilayer piezoelectric body and multiple internal electrodes. The multilayer piezoelectric body has a pair of principal faces in a first-axis direction, a pair of end faces in a second-axis direction crossing at right angles with the first-axis direction and defining the longitudinal direction, and a pair of side faces in a third-axis direction crossing at right angles with the first-axis direction and second-axis direction. The multiple internal electrodes are placed inside the multilayer piezoelectric body and stacked in the first-axis direction. Among the multiple internal electrodes, a center internal electrode placed at the center part of the multilayer piezoelectric body is such that its first cross-sectional shape, as viewed from the third-axis direction, has undulations greater than the undulations of the second cross-sectional shape of the center internal electrode as viewed from the second-axis direction.

A wafer scale ultrasonic sensor assembly includes a wafer substrate, an ultrasonic element, first and second protective layers, conductive wires, a transmitting material, an ASIC, a conductive bump, and a soldering portion. The wafer substrate includes a via. The ultrasonic element is exposed to the via. The conductive wires are on the first protective layer and connected to the ultrasonic element. The second protective layer covers the conductive wires, and the second protective layer has an opening corresponding to the ultrasonic element. The transmitting material contacts the ultrasonic element. The ASIC is connected to the wafer substrate, so that the via forms a space between the ASIC and the ultrasonic element. The conductive pillar is in a via defined through the ASIC, the wafer substrate, and the first protective layer, and the conducive pillar is respectively connected to the conductive wires and the soldering portion.

A multilayer piezoelectric element includes a ceramic base body, a pair of external electrodes, multiple internal electrodes, and surface electrodes. The ceramic base body is formed by a piezoelectric ceramic. The pair of external electrodes cover a pair of end faces. The multiple internal electrodes are stacked inside the ceramic base body along a thickness direction crossing at right angles with a longitudinal direction, and connected alternately to the pair of external electrodes in the thickness direction. The surface electrodes are provided on a pair of principal faces, respectively, and are each connected to the external electrode different from the one to which the internal electrode adjacent in the thickness direction is connected. The pair of external electrodes have a higher porosity than the surface electrodes.

A method for manufacturing an imaging module, including: providing a first substrate and bonding a first dielectric layer on the first substrate; patterning the first dielectric layer to form at least one first bump and at least one second bump which are mutually independent, wherein a region surrounded by the at least one second bump defines a location region of the moved element; providing a piezoelectric element, adhering one end of the piezoelectric element to the first bump through a first adhesion material and making the other end of the piezoelectric element at least partially located above the second bump; adhering the moved element to the second bump through a second adhesion material; and debonding to remove the first substrate.

A multilayer component is disclosed. In an embodiment, a multilayer component includes a main body having a plurality of alternately arranged ceramic layers and inner electrodes and at least two outer electrodes for electrically contacting the inner electrodes, wherein the at least two outer electrodes have a different polarity, and wherein the outer electrodes have a different geometric shape and/or a different size and/or a different arrangement at an outer surface of the main body for identifying the different polarity.

A multi-layer piezoelectric microactuator assembly has at least one poled and active piezoelectric layer and one poled but inactive piezoelectric layer. The poled but inactive layer acts as a constraining layer in resisting expansion or contract of the first piezoelectric layer thereby reducing or eliminating bending of the assembly as installed in an environment, thereby increasing the effective stroke length of the assembly. Poling only a single layer would induce stresses into the device; hence, polling both piezoelectric layers even though only one layer will be active in use reduces stresses in the device and therefore increases reliability.