Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a solid state photomultiplier may include a microcell configured to generate an analog signal when exposed to optical photons, a quench resistor electrically coupled to the microcell in series; and a first switch disposed between the quench resistor and an output of the solid state photomultiplier, the first switch electrically coupled to the microcell via the quench resistor and configured to selectively couple the microcell to the output.

The present disclosure relates to a semiconductor photomultiplier comprising a a substrate; an array of photosensitive elements formed on a first major surface of the substrate; a plurality of primary bus lines interconnecting the photosensitive elements; at least one segmented secondary bus line provided on a second major surface of the substrate which is operably coupled to one or more terminals; and multiple vertical interconnect access (via) extending through the substrate operably coupling the primary bus lines to the at least one segmented secondary bus line.

An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

The present disclosure provides an array substrate. The array substrate includes a substrate; and at least one ultraviolet (UV) detection structure. The UV detection structure includes a photosensitive pattern on the substrate, and a first electrode pattern and a second electrode pattern for providing an operating voltage for the at least one UV detection structure.

The present disclosure relates to an optical receiver. The optical receiver has a first photosensor and a second photosensor disposed within a substrate. The first photosensor has a first angled surface located on a first side of a depression within the substrate, and the second photosensor has a second angled surface located on a second side of the depression, opposite the first side of the depression. A plurality of blocking structures are disposed over the substrate. The plurality of blocking structures block radiation that is not incident on the first and second angled surfaces. By receiving incident radiation on the first and second angled surfaces, the first and second photosensors are able to generate directional-dependent photocurrents that vary depending upon an angle of incident radiation. Based upon the directional-dependent photocurrents, an angle of incident radiation can be determined.

The detection device comprises a cold finger which performs the thermal connection between a detector and a cooling system. The cold finger comprises at least one side wall at least partially formed by an area made from the amorphous metal alloy. Advantageously, the whole of the cold finger is made from the amorphous metal alloy.

There is provided a method for fabricating an optoelectronic semiconductor device (2,27) including a layer stack (1,26) that comprises a metallization structure (7,7) including a contact region (8,11) for electrically contacting the semiconductor device (2,27). Moreover, a dielectric layer (12) and a semiconductor layer (3) are provided. The semiconductor layer (3) comprises a functional region (6) configured as an interface for electromagnetic (visible or UV) radiation. Material in regions (17,20) above the contact region (8,11) and above the functional region (6) of the layer stack (1,26) is removed by a temporarily simultaneous etching, thereby forming two windows (24,18) for coupling the semiconductor device (2,27) to the environment, optically as well as electrically. It is an accomplishment of the invention that coupling and/or absorption losses of radiation to be analysed optically in CMOS silicon and other semiconductors is reduced at the reduced process complexity.

An optical sensing device including a substrate, a light-sensing element, a light-shielding layer, an insulating layer and a light-collecting element is disclosed. The light-sensing element is disposed on the substrate. The light-shielding layer is disposed on the light-sensing element and includes a first opening overlapping the light-sensing element. The insulating layer is disposed on the light-shielding layer and includes a second opening overlapping the first opening. The light-collecting element is disposed on the insulating layer and overlaps the second opening and includes a focus distance F and a first refractive index N1. A second refractive index N3 of an external medium, the first refractive index N1, the focus distance F, and a radius R of curvature of the light-collecting element meet the following equation: N1/N3=F/(FR).

A single-photon detection pixel includes a substrate, a first well provided in the substrate, a pair of heavily doped regions provided on the first well, and a contact provided between the pair of heavily doped regions, wherein the substrate and the pair of heavily doped regions have a first conductivity type, and the first well and the contact have a second conductivity type that is different from the first conductivity type.

A method for providing an electric waveform at a cryogenic temperatures includes providing an optical signal, which comprises an optical waveform, guiding the optical signal into a cryogenic chamber, and converting the optical waveform of the optical signal into an electric waveform inside the cryogenic chamber.