An X-ray detector according to the present disclosure comprises: a scintillator for converting incident X-rays into visible rays; a photoelectric conversion part, which is disposed below the scintillator and converts the visible rays into electrical signals; and a substrate disposed below the photoelectric conversion part, wherein the scintillator comprises a perovskite compound represented by the following chemical formula 1. [Chemical Formula 1] A.sub.3B.sub.2X.sub.5:Activator (In the chemical formula, A is a monovalent metal cation, B is a divalent metal cation, X is a monovalent anion, and the activator is thallium (Tl) or indium (In).)

Structures for a photodetector and methods of forming a structure for a photodetector. The structure includes a semiconductor layer having a p-n junction and a deep trench isolation region extending through the semiconductor layer. The deep trench isolation region includes first layers and second layers that alternate with the first layers to define a Bragg mirror. The first layers contain a first material having a first refractive index, and the second layers contain a second material having a second refractive index that is greater than the first refractive index.

An optical receiver comprises a monolithically integrated photodiode (PD) and transimpedance amplifier (TIA). The TIA comprises InP heterojunction bipolar transistors (HBT) fabricated from a first plurality of layers of an epitaxial layer stack grown on a SI:InP substrate; the PD may be a pin PD fabricated from a second plurality of layers of the epitaxial layer stack, overlying the first plurality of layers. The p-contact of the PIN is directly connected to the input of the TIA to reduce PIN capacitance C.sub.PIN. The TIA capacitance C.sub.TIA may be matched to C.sub.PIN. The PD may be a vertical PIN with a top facet window or a waveguide PD with a lateral facet window. Device parameters comprising a device area, device capacitance C.sub.PIN+C.sub.TIA; and feedback resistance R.sub.F of the TIA are optimized to performance specifications comprising a specified sensitivity and responsivity at an operational wavelength. This design approach enables cost-effective fabrication of integrated PIN-TIA.

An optical touch detection circuit and an optical touch display panel are provided. The optical touch detection circuit includes a photosensitive module and a detection module. The photosensitive module is configured to generate a photoelectric signal. The detection module is connected to the photosensitive module. The detection module is configured to implement an optical touch function based on the photoelectric signal. The provided optical touch detection circuit and optical touch display panel can improve a signal-to-noise ratio of the optical touch detection circuit. This is beneficial for accurately determining a position of an optical touch.

An optical system may include a substrate and a plurality of silicon photomultipliers (SiPMs) monolithically integrated with the substrate. Each SiPM may include a plurality of single photon avalanche diodes (SPADs). The optical system also includes an aperture array having a plurality of apertures. The plurality of SiPMs and the aperture array are aligned so as to define a plurality of receiver channels. Each receiver channel includes a respective SiPM of the plurality of SiPMs optically coupled to a respective aperture of the plurality of apertures.

A semiconductor substrate including a first main surface and a second main surface opposing each other is provided. The semiconductor substrate includes a first semiconductor region of a first conductivity type. The semiconductor substrate includes a plurality of planned regions where a plurality of second semiconductor regions of a second conductivity type forming pn junctions with the first semiconductor region are going to be formed, in a side of the second main surface. A textured region is formed on surfaces included in the plurality of planned regions, in the second main surface. The plurality of second semiconductor regions are formed in the plurality of planned regions after forming the textured region. The first main surface is a light incident surface of the semiconductor substrate.

A laser detector includes a detection section, the detection section includes an array of photo-detectors configured to detect a vertical position of a beam. The laser detector also includes an indication section, the indication section includes an array of illumination elements configured to indicate the vertical position of the laser beam. The detection section has a height H1. The indication section has a height H2. H2 is in a range of from 0.75 to 1.25 H1.

A semiconductor device includes a photodiode, a first transistor, and a second transistor. The photodiode has a function of supplying a charge corresponding to incident light to a gate of the first transistor, the first transistor has a function of accumulating the charge supplied to the gate, and the second transistor has a function of retaining the charge accumulated in the gate of the first transistor. The second transistor includes an oxide semiconductor.

The ultraviolet sensor device comprises a semiconductor substrate, a dielectric layer above the substrate, a surface of the dielectric layer that is provided for the incidence of ultraviolet radiation, a floating gate electrode in the dielectric layer and an electrically conductive control gate electrode near the floating gate electrode. The control gate electrode is insulated from the floating gate electrode. A sensor layer is formed by an electrically conductive further layer that is electrically conductively connected to the floating gate electrode. The control gate electrode is arranged outside a region that is located between the sensor layer and the surface provided for the incidence of ultraviolet radiation. The sensor layer is discharged by incident UV radiation and can be charged or discharged electrically by charging or discharging the floating gate electrode.

The present disclosure relates to a photo sensor module. The thickness and size of an IC chip may be reduced by manufacturing a photo sensor based on a semiconductor substrate and improving the structure to place a UV sensor on the upper section of an active device or a passive device. The photo sensor module includes a semiconductor substrate, a field oxide layer, formed on the semiconductor substrate, and a photo sensor comprising a photo diode formed on the field oxide layer.