The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).

A photo-sensing unit including a first electrode, a first insulation layer, a photo-sensing structure and a second electrode is provided. The first insulation layer covers the first electrode and has an opening exposing the first electrode. The photo-sensing structure is located on the first electrode and disposed in the opening of the first insulation layer. The photo-sensing structure includes a first photo-sensing layer and a second photo-sensing layer stacked with each other. A material of the first photo-sensing layer is Si.sub.xGe.sub.yO.sub.z. A material of the second photo-sensing layer is Si.sub.vO.sub.w. The second electrode covers the photo-sensing structure. A photo-sensing apparatus including the photo-sensing unit and a fabricating method of a photo-sensing unit are also provided.

The display device has a display panel where a photosensor and a transistor including an oxide semiconductor layer are arranged. The display device detects a shadow of the object, which is projected on the display panel when the object approaches the display panel and blocks ambient light, with a photosensor, whereby a position or motion of the object is detected. Even when the object is not in contact with the display panel, the object can be detected.

A chip package included a chip, a first though hole, a laser stop structure, a first isolation layer, a second though hole and a conductive layer. The first though hole is extended from the second surface to the first surface of the chip to expose a conductive pad, and the laser stop structure is disposed on the conductive pad exposed by the first through hole, which an upper surface of the laser stop structure is above the second surface. The first isolation layer covers the second surface and the laser stop structure, and the first isolation layer has a third surface opposite to the second surface. The second though hole is extended from the third surface to the second surface to expose the laser stop structure, and a conductive layer is on the third surface and extended into the second though hole to contact the laser stop structure.

A display substrate includes a pixel switching element, a pixel electrode, a reference line, a control switching element, a bias line, a light sensing element, a sensing capacitor and a light blocking filter pattern. The pixel switching element is connected to a data line and a gate line, includes a first semiconductor pattern. The pixel electrode is connected to the pixel switching element. The reference line is in parallel with the data line. The control switching element is connected to the reference line and the gate line, includes a second semiconductor pattern. The bias line is in parallel with the gate line. The light sensing element is connected to the bias line and the control switching element, includes a third semiconductor pattern. The sensing capacitor is connected to the light sensing element and a storage line. The light blocking filter pattern transmits a first light, and blocks a second light.

An optical device includes a first substrate, a second substrate, a first transmitting portion, N light-emitting portions, and a light-receiving portion. The first transmitting portion is disposed in the first substrate. The N light-emitting portions are disposed in the first substrate, and the N is an integer of 2 or more. The light-receiving portion is configured to receive light passing through the first transmitting portion and is disposed in the second substrate.

A biometric imager may comprise a plurality of sensor element traces formed in or on a sensor substrate which may comprise at least a portion of a display screen defining a biometric sensing area and forming in-active pixel locations; an auxiliary active circuit formed in or on the sensor substrate on the periphery of the biometric sensing area and in direct or indirect electrical contact with the sensor element traces; and providing a signal processing interface to a remotely located controller integrated circuit. The sensor element traces may form a portion of one dimensional linear sensor array or pixel locations in a two dimensional grid array capacitive gap biometric imaging sensor. The auxiliary circuit may provide pixel location selection or pixel signal amplification. The auxiliary circuit may be mounted on a surface of the display screen. The auxiliary circuit further comprising a separate pixel location selection controller circuit.

A fingerprint sensing device includes an insulating package, an image-sensing die, a light-emitting element, and a conductive component. The insulating package has a bottom surface and a top surface formed with first and second recesses. The image-sensing die is disposed in the first recess and has an outer surface exposed therefrom. The light-emitting element is disposed in the second recess and has an outer surface exposed from the second recess, and an electrode unit. The conductive component is formed in the insulating package, has top and bottom ends exposed from the top and bottom surfaces of the insulating package, and is electrically coupled to the image-sensing die and the electrode unit.

According to one embodiment, a detection device includes a substrate, a photoelectric conversion element provided on the substrate and including a semiconductor layer, a transistor provided to correspond to the photoelectric conversion element, and a green color filter provided above the photoelectric conversion element.

An image capture device to produce images of an object in contact with or in immediate proximity to the device comprises a sensor and illumination means capable of emitting a first type of radiation to illuminate an object in order to obtain an image thereof, the sensor comprising pixels that are sensitive to a second type of radiation dependent on the first type of radiation emitted by the illumination means. The sensor is formed on a monolithic substrate comprising multiple passages that are transparent to the first type of radiation. The illumination means comprise at least one source of the first type of radiation positioned so as to face one of the passages. The invention also relates to a method for producing this device.