Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 m or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

According to an aspect, a detection device includes: a photosensor including light-receiving elements; a front light including a light guide plate and a light source configured to emit light to a first side surface of the light guide plate; and an optical filter layer provided between the light-receiving elements and the front light. The optical filter layer includes light guide paths and a light-blocking portion. A first opening of each light guide path closest to the light-receiving elements is offset in a direction more away from the light source than a second opening of the light guide path farthest from the light-receiving elements. The light guide plate includes a scattering portion on the optical filter layer side. A first peak of an intensity of first light emitted from the detection surface of the light guide plate is observed to be tilted toward a side opposite to the first side surface.

A display device includes a display panel. A fingerprint sensor package at least partially overlaps the display panel. A printed circuit board (PCB) at least partially overlaps the display panel and includes a touch sensor integrated circuit (IC). The fingerprint sensor package includes a first base having a plurality of conductive patterns, an image sensor disposed on a first surface of the first base, and a first conductive layer disposed on a second surface of the first base, at least partially overlapping with the image sensor, and electrically connected to the plurality of conductive patterns of the first base via a via electrode.

A display device may include a sensor layer, a substrate, a pixel layer, and a black matrix. The sensor layer may include photo sensors. The substrate may be positioned on the sensor layer. The pixel layer may be positioned on the substrate and may include pixels. The substrate may be positioned between the sensor layer and the pixel layer. The pixels may include pixel electrodes. The black matrix may be positioned on the pixel layer, may include first-set openings respectively overlapping with the pixel electrodes, and may include second-set openings not overlapping with any pixel electrodes of the display device in a direction perpendicular to the substrate. The pixel layer may be positioned between the substrate and the black matrix.

A texture image acquiring device, a display device and a collimator are disclosed. The texture image acquiring device includes a collimator and an image sensor. The collimator includes a lens array and diaphragm component. The diaphragm component includes a first diaphragm layer and a second diaphragm layer. The lens array is configured to allow light rays to be converged and incident on the diaphragm component. The diaphragm component is configured to allow light rays to pass through, and to restrict an angle of light rays capable of passing through the diaphragm component. The image sensor is configured to sense light rays incident on the image sensor for acquiring a texture image.

A display device includes a substrate including a display area and a component area including a transmission area, and display elements disposed on the substrate. The substrate includes grooves corresponding to the transmission area of the component area.

A sensing device is provided. The sensing device includes a sensing circuit, a plurality of sensing elements, and a plurality of light-collecting elements. The light-collecting elements are for collecting lights to the plurality of sensing elements. The plurality of sensing elements are configured to generate a plurality of sensing signals according to the lights that are collected, and output the plurality of sensing signals as a whole to the sensing circuit.

A photosensitive device includes a first photosensitive unit, a first collimator layer, a first lens, and a first dummy lens. The first photosensitive unit includes a first photosensitive component and a first control circuit. The first control circuit is electrically connected to the first photosensitive component. The first collimator layer is located above the first photosensitive component and has a first pinhole and a first dummy pinhole. The first lens is located above the first collimator layer and overlapping with the first photosensitive component and the first pinhole in a first direction. The first dummy lens is located above the first collimator layer and overlapping with the first dummy pinhole in the first direction.

A detection device includes a substrate, a plurality of photodiodes that are arranged in a detection region of the substrate, a plurality of first terminals that are arranged in a first direction in a peripheral region outside the detection region of the substrate, an insulating film that covers the first terminals, and an anisotropic conductive film that is located above the insulating film, and covers the first terminals.

The present disclosure relates to an integrated chip including a semiconductor layer and a photodetector disposed along the semiconductor layer. A color filter is over the photodetector. A micro-lens is over the color filter. A dielectric structure comprising one or more dielectric layers is over the micro-lens. A receptor layer is over the dielectric structure. An optical signal enhancement structure is disposed along the dielectric structure and between the receptor layer and the micro-lens.