A radiation scanning system comprises a radiation detection sub-assembly, and a routing sub-assembly coupled to the radiation detection sub-assembly. The radiation detection sub-assembly comprises a first substrate electrically connected to the radiation detection sub-assembly, and a second substrate electrically connected to the first substrate. The radiation scanning system further comprises one or more radiation shields between the first substrate and the second substrate, and one or more semiconductor dice electrically connected to the second substrate on a side of the second substrate opposite the first substrate. Related radiation detector arrays radiation scanning systems are also disclosed.

A radiation imaging device includes a radiation detector having an electric charge generation part configured to generate an electric charge corresponding to energy of incident radiation and a reading part configured to output a digital value based on the electric charge, and a circuit board in which a plurality of radiation detectors are disposed two-dimensionally. The reading part includes a lead-out substrate in which a plurality of signal processing parts are disposed two-dimensionally, and an intermediate substrate disposed between the electric charge generation part and the lead-out substrate. A plurality of first intermediate electrodes are disposed on an intermediate input surface. A plurality of second intermediate electrodes are disposed on an intermediate output surface. An arrangement interval of the second intermediate electrodes is different from an arrangement interval of the first intermediate electrodes.

According to one embodiment, a photoelectric conversion substrate includes a basement, gate lines, data lines, first thin film transistors located in an effective area, first thin film photodiodes located in the effective area, second thin film photodiodes located in a non-effective area, and second thin film transistors located in a correction area. Each of the second thin film transistors is electrically connected to one corresponding gate line and one corresponding data line.

A disclosed method of manufacturing a semiconductor device includes singulating a bonded substrate including a first substrate provided with an interconnection structure layer and a first bonding layer and a second substrate provided with a second bonding layer opposed to the first bonding layer into a plurality of semiconductor devices. The bonded substrate includes functional element regions and a scribe region in a plan view. The singulating includes forming a groove in the scribe region, and cutting the bonded substrate in a region outside an inner side surface of the groove. The groove is formed penetrating one of the first substrate and the second substrate, the interconnection structure layer, and the first and second bonding layers. The groove extends from the one of the first substrate and the second substrate to a position deeper than all interconnection layers provided between the first and second substrates.

Disclosed herein is an imaging system, comprising: an image sensor which comprises: a system printed circuit board (system PCB); M group printed circuit boards (group PCBs (i), i=1, . . . , M) mounted on a mounting surface of the system PCB; and Ni radiation detectors mounted on the group PCB (i), for i=1, . . . , M, wherein M and Ni, i=1, . . . , M are integers greater than 1, wherein the image sensor is configured to scan a scene in a scanning direction, and wherein, for each group PCB (i), there is not a plane which (A) is parallel to a normal direction of the mounting surface of the system PCB, (B) is parallel to the scanning direction, (C) divides all active areas of the Ni radiation detectors into 2 groups of active areas, and (D) does not intersect any active area of all the active areas of the Ni radiation detectors.

A detector system for molecular imaging of a radionuclide comprises a 3D semiconductor detector comprising a plurality of sensor stacks of sensors made of a semiconductor material having an average atomic number Z below 40. A read-out circuitry connected to the pixels is configured to output, for each interaction induced by an incident gamma ray in the detector, a signal representative of a time, a position and an energy of the interaction in the detector. The interactions in the detector belonging to a same event induced by the incident gamma ray are predicted based on the output signals and used to estimate a direction of the incident gamma ray and reconstruct an image based on the estimated directions of incident gamma rays.

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first logic die including a first through via, an image sensor die hybrid bonded to the first logic die, and a second logic die bonded to the first logic die. A front side of the first logic die facing a front side of the image sensor die. A front side of the second logic die facing a backside of the first logic die. The second logic die comprising a first conductive pad electrically coupled to the first through via.

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first logic die including a first through via, an image sensor die hybrid bonded to the first logic die, and a second logic die bonded to the first logic die. A front side of the first logic die facing a front side of the image sensor die. A front side of the second logic die facing a backside of the first logic die. The second logic die comprising a first conductive pad electrically coupled to the first through via.

Systems and methods are herein provided for a radiation detector with rectangular pixels. In one example, an x-ray imaging system comprises a pixel array of a flat panel detector comprising a plurality of pixels with a rectangular pixel pitch arranged in pairs, wherein each of the plurality of pixels is configured to generate respective image data signals, wherein in low-dose applications, TFT control lines of pixels in each pixel pair are energized simultaneously to generate signals with an effective pixel pitch of twice the rectangular pixel pitch and in high-dose applications, TFT control lines of pixels in each pixel pair are energized sequentially and the detector is translated during image acquisition for an effective pixel pitch of half the rectangular pixel pitch.

A radiation detector unit including an interposer configured to electrically connect a pixelated radiation sensor positioned on a front side of the interposer to an application-specific integrated circuit (ASIC) positioned on a back side of the interposer, where the interposer has at least one feature which equalizes the energy resolution (ER) response of edge and center pixel detectors of the pixelated radiation sensor within 10% of one another.