The structure and method of fabricating a radiation and temperature hard avalanche photodiode with integrated radiation and temperature hard readout circuit, comprising a substrate, an avalanche region, an absorption region, and a plurality of Ohmic contacts are presented. The present disclosure provides for tuning of spectral sensitivity and high device efficiency, resulting in photon counting capability with decreased crosstalk and reduced dark current.

A ranging apparatus includes an array of light sensitive detectors configured to receive light from a light source which has been reflected by an object. The array includes a number of different zones. Readout circuitry including at least one read out channel is configured to read data output from each of the zones. A processor operates to process the data output to determine position information associated with the object.

Materials and methods may be provided for short-wave infrared (SWIR) superlattice materials. The superlattice material includes a first sub-layer comprising InAs, and a second sub-layer adjacent to the first sub-layer including AlSb, AlAsSb, or InAlAsSb.

A pixel circuit and a display device having the pixel circuit are disclosed. One inventive aspect includes a switching thin-film TFT and a light sensing TFT. The switching thin-film TFT includes a first source electrode electrically connected to a data line. A first gate electrode of the switching thin-film TFT and a second source electrode of the light sensing TFT are electrically connected to a first gate line. A first drain electrode of the switching thin-film TFT and a second drain electrode of the light sensing TFT are electrically connected to a pixel electrode.

A method for producing an optoelectronic semiconductor component having a plurality of image points and an optoelectronic component are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including an n-conducting semiconductor layer, an active zone, and a p-conducting semiconductor layer; applying a first layer sequence, wherein the first layer sequence is divided into a plurality of regions which are arranged laterally spaced with respect to each other on a top surface of the p-conducting semiconductor layer; c) applying a second insulating layer; partially removing the p-conducting semiconductor layer and the active zone, in such a way that the n-conducting semiconductor layer is exposed at points and the p-conducting semiconductor layer is divided into individual regions which are laterally spaced with respect to each other, wherein each of the regions comprises a part of the p-conducting semiconductor layer and a part of the active zone.

A charge-modulation element includes a first charge-accumulation region, a second charge-accumulation region, a third charge-accumulation region, and a fourth charge-accumulation region, provided symmetric with respect to a center position of a light-receiving area, and a first field-control electrode pair, a second field-control electrode pair, a third field-control electrode pair, and a fourth field-control electrode pair, arranged on both sides of respective charge transport paths, for changing depletion potentials of the charge transport paths, which extend from the center position of the light-receiving area to the first charge-accumulation region, the second charge-accumulation region, the third charge-accumulation region, and the fourth charge-accumulation region.

A method for designing a photodetector comprising an array of pixels: selecting at a material composition for the photodetector; determining a configuration of at least one pixel in the array of pixels using a computer simulation, each pixel comprising an active region and a diffractive region, and a photodetector/air interface through which light enters, the computer simulation operating to process different configurations of the pixel to determine an optimal configuration for a predetermined wavelength or wavelength range occurring when waves reflected by the diffractive element form a constructive interference pattern inside the active region to thereby increase the quantum efficiency of the photodetector. An infrared photodetector produced by the method.

A p.sup. type semiconductor substrate 20 has a first principal surface 20a and a second principal surface 20b opposed to each other and includes a photosensitive region 21. The photosensitive region 21 is composed of an n.sup.+ type impurity region 23, a p.sup.+ type impurity region 25, and a region to be depleted with application of a bias voltage in the p.sup. type semiconductor substrate 20. An irregular asperity 10 is formed in the second principal surface 20b of the p.sup. type semiconductor substrate 20. An accumulation layer 37 is formed on the second principal surface 20b side of the p.sup. type semiconductor substrate 20 and a region in the accumulation layer 37 opposed to the photosensitive region 21 is optically exposed.

A detector module for detecting photons includes a detector formed from a semiconductive material, the detector having a first surface, an opposing second surface, and a plurality of sidewalls extending between the first and second surfaces, and a guard band coupled to the sidewalls, the guard band having a length that extends about a circumference of the detector, the guard band having a width that is greater than a thickness of the detector such that an upper rim segment of the guard band projects beyond the first surface of the detector, the upper rim segment being folded over a peripheral region of the first surface along the circumference of the detector, the guard band configured to reduce recombinations proximate to the edges of the detector.

Disclosed are minority carrier based mercury-cadmium telluride (HgCdTe) infrared detectors and arrays, and methods of making, are disclosed. The constructions provided by the invention enable the detectors to be used at higher temperatures, and/or be implemented on less expensive semiconductor substrates to lower manufacturing costs. An exemplary embodiment a substrate, a bottom contact layer disposed on the substrate, a first mercury-cadmium telluride layer having a first bandgap energy value disposed on the bottom contact layer, a second mercury-cadmium telluride layer having a second bandgap energy value that is greater than the first bandgap energy value disposed on the first mercury-cadmium telluride layer, and a collector layer disposed on the second mercury-cadmium telluride layer, wherein the first and second mercury-cadmium telluride layers are each doped with an n-type dopant.