A photosensor device for reducing dark current is disclosed. The photosensor device includes a photon absorbing layer and two or more photosensor diffusions in said absorbing layer. The photosensor diffusions in the absorbing layer have edges of their diffusions separated in said absorbing layer by less than two minority carrier diffusion lengths. The photosensor device also includes in one embodiment one or more diffusion control junction diffusions in the absorbing layer and in proximity to the photosensor diffusions. In another embodiment the photosensor diffusions are selectively biased to operate as photosensor diodes or as diffusion impediments.

A sensor arrangement with a silicon-based optical sensor, particularly color sensors for colorimetric applications is disclosed. The invention aims to find a novel possibility for suppressing interference ripples occurring in optical sensors when adding substrates with optically functional coatings which permits a simple production without complicated adaptation layers. The sensor passivation is composed of a combination of thin SiO.sub.2 layer in the range of 5 to 10 nm and an antireflection-matched Si.sub.3N.sub.4 layer and a substrate which carries at least one optical filter is arranged over the sensor passivation and connected to the sensor by means of an adhesive and forms an intermediate space between sensor surface and optical filter which is filled with an optical medium having a low refractive index (n.sub.2) and a height variation (h) over the associated sensor surface.

According to an aspect of the present principles, methods are provided for fabricating an integrated structure. A method includes forming a very large scale integration (VLSI) structure including a semiconductor layer at a top of the VLSI structure. The method further includes mounting the VLSI structure to a support structure. The method additionally includes removing at least a portion of the semiconductor layer from the VLSI structure. The method also includes attaching an upper layer to the top of the VLSI structure. The upper layer is primarily composed of a material that has at least one of a higher resistivity or a higher transparency than the semiconductor layer. The upper layer includes at least one hole for at least one of a photonic device or an electronic device. The method further includes releasing said VLSI structure from the support structure.

A method for producing an optoelectronic semiconductor component having a plurality of image points and an optoelectronic component are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including an n-conducting semiconductor layer, an active zone, and a p-conducting semiconductor layer; applying a first layer sequence, wherein the first layer sequence is divided into a plurality of regions which are arranged laterally spaced with respect to each other on a top surface of the p-conducting semiconductor layer; c) applying a second insulating layer; partially removing the p-conducting semiconductor layer and the active zone, in such a way that the n-conducting semiconductor layer is exposed at points and the p-conducting semiconductor layer is divided into individual regions which are laterally spaced with respect to each other, wherein each of the regions comprises a part of the p-conducting semiconductor layer and a part of the active zone.

Disclosed are a method of forming a photodetector and a photodetector structure. In the method, a polycrystalline or amorphous light-absorbing layer is formed on a dielectric layer such that it is in contact with a monocrystalline semiconductor core of an optical waveguide. The light-absorbing layer is then encapsulated in one or more strain-relief layers and a rapid melting growth (RMG) process is performed to crystallize the light-absorbing layer. The strain-relief layer(s) are tuned for controlled strain relief so that, during the RMG process, the light-absorbing layer remains crack-free. The strain-relief layer(s) are then removed and an encapsulation layer is formed over the light-absorbing layer (e.g., filling in surface pits that developed during the RMG process). Subsequently, dopants are implanted through the encapsulation layer to form diffusion regions for PIN diode(s). Since the encapsulation layer is relatively thin, desired dopant profiles can be achieved within the diffusion regions.

The present invention includes a method for biomimetic-inspired infrared sensors utilizing a bottom up approach. This method includes providing a sinusoidal alternating electrical field between a preformed electrode gap comprising two gold micro-electrodes. Providing single needles of zinc phosphide crystals optimized for growth conditions using a physical vapour transport. Immobilizing at least one individual zinc phosphide nanowire in the preformed electrode gap using dielectrophoretic manipulation. And, placing and contacting the at least one individual zinc phosphide nanowire in the preformed electrode gap. Two nanowires are combined to form a lambda shape for improved sensing.

A photoelectric conversion device includes a plurality of pixels, the photoelectric conversion device being constituted of: an avalanche multiplication region in which avalanche multiplication is performed; a pixel isolator which implements separation between pixels and in which an oxide film is formed; a light-shielding film which is a film at least partially overlapped with the pixel isolator in a plan view and is configured to shield light; and a reflection member which is configured to contact the pixel isolator and the light-shielding film, between the pixel isolator and the light-shielding film, and to surround one pixel in a plan view. The light-shielding film and the reflection member are formed of different materials.

A photodetector includes a semiconductor photodetection element including a semiconductor layer having a first surface and a second surface, and a light-condensing structure disposed on the first surface. The semiconductor layer includes a plurality of photodetection units. The light-condensing structure includes a main body portion and a metal layer. The main body portion has a plurality of first openings arranged to correspond to the plurality of photodetection units, and includes a plurality of layers stacked on the first surface. The metal layer covers an inner surface of each of the plurality of first openings to expose a region corresponding to each of the plurality of first openings in a surface of the semiconductor photodetection element. A surface of the metal layer in each of the plurality of first openings has a shape that spreads out to a side opposite to the semiconductor photodetection element.

A method for manufacturing an electronic device includes the following steps: providing a carrier and a circuit substrate, wherein the carrier includes a plurality of spacers, the circuit substrate includes a plurality of electronic units, and the electronic units are detected and determined to be normal or defective; providing cover units on the carrier; disposing the circuit substrate on the cover units so that the spacers support the circuit substrate, wherein there is a gap between the circuit substrate and the cover units, and the cover units correspond to the electronic units determined to be normal; vacuuming the gap between the circuit substrate and the cover units; moving the spacers to make the cover units and the circuit substrate contact each other; and pressing the cover units and the circuit substrate to fix the cover units and the circuit substrate to each other.

A dynamic photodiode detector or detector array having a light absorbing region of doped semiconductor material for absorbing photons. Electrons or holes generated by photon absorption are detected with a construction of oppositely heavily doped anode and cathode regions and a heavily doped ground region of the same doping type as the anode region. Photon detection involves switching the device from reverse bias to forward bias to create a depletion region enclosing the anode region. When a photon is then absorbed the electron or hole thereby generated drifts under the electric field induced by the biasing to the depletion region where it causes the anode-to-ground current to increase. Furthermore, the detector is configured such that anode-to-cathode current starts to flow once a threshold number of electrons or holes reaches the depletion region, where the threshold may be one to provide single photon detection.