An optical system may include a substrate and a plurality of silicon photomultipliers (SiPMs) monolithically integrated with the substrate. Each SiPM may include a plurality of single photon avalanche diodes (SPADs). The optical system also includes an aperture array having a plurality of apertures. The plurality of SiPMs and the aperture array are aligned so as to define a plurality of receiver channels. Each receiver channel includes a respective SiPM of the plurality of SiPMs optically coupled to a respective aperture of the plurality of apertures.

A semiconductor substrate including a first main surface and a second main surface opposing each other is provided. The semiconductor substrate includes a first semiconductor region of a first conductivity type. The semiconductor substrate includes a plurality of planned regions where a plurality of second semiconductor regions of a second conductivity type forming pn junctions with the first semiconductor region are going to be formed, in a side of the second main surface. A textured region is formed on surfaces included in the plurality of planned regions, in the second main surface. The plurality of second semiconductor regions are formed in the plurality of planned regions after forming the textured region. The first main surface is a light incident surface of the semiconductor substrate.

Provided is an optical element, in which: an internal wiring portion electrically connects a first contact electrode portion and a second contact electrode portion to each other; a second region, an active layer and a second conductive semiconductor layer form a mesa structure; a pad electrode is placed so as to cover a plurality of unit elements, and is electrically connected to at least one of the first contact electrode portion and the second contact electrode portion; a first insulating portion is placed between the pad electrode and a first region of a side surface of a mesa structure and a first conductive semiconductor layer; and a diameter of a circle circumscribed to a region where the pad electrode and a connection portion are in contact with each other is 15% or more of a length of a short side of a substrate.

A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.

A method of manufacturing an image sensor device includes providing a metalized thin film transistor layer on a glass substrate; forming an inter-layer dielectric layer on the metalized thin film transistor layer: forming a via through the inter-layer dielectric layer; forming a metal layer the inter-layer dielectric and within the inter-layer dielectric layer via for contacting the metalized thin film transistor layer; forming a bank layer on the metal layer and the inter-layer dielectric layer: forming a via through the bank layer; forming an electron transport layer on the bank layer and within the bank layer via for contacting an upper surface of the metal layer; forming a bulk heterojunction layer on the electron transport layer; forming a hole transport layer on the bulk heterojunction layer; and forming a top contact layer on the hole transport layer.

The present disclosure relates to a semiconductor photomultiplier comprising a a substrate; an array of photosensitive elements formed on a first major surface of the substrate; a plurality of primary bus lines interconnecting the photosensitive elements; at least one segmented secondary bus line provided on a second major surface of the substrate which is operably coupled to one or more terminals; and multiple vertical interconnect access (via) extending through the substrate operably coupling the primary bus lines to the at least one segmented secondary bus line.

One embodiment of the disclosure includes an A-D conversion circuit connected to a photodiode for providing a silicon photomultiplier that with enhanced detection accuracy and a time resolution. A current generated upon photon detection by the photodiode partially flows into another photodiode adjacent to the photodiode arranged in parallel via a resistor. At this time, the current is charged into a parasitic capacitance adjacent to the photodiode, and thereafter is discharged. However, the discharged current cannot flow toward an output terminal by the A-D conversion circuit, and also cannot switch the A-D conversion circuit. Consequently, the construction of the disclosure can detect light with no influence of the current discharged from the parasitic capacitance. As a result, the disclosure achieves a silicon photomultiplier with high detection accuracy and a satisfactory time resolution.

Provided is a photodiode having a high-concentration layer on its surface, in which the high-concentration layer is formed so that the thickness of a non-depleted region is larger than the roughness of an interface between silicon and an insulation film layer, and is smaller than a penetration depth of ultraviolet light.

Optoelectronic devices (e.g., optical proximity sensors), methods for fabricating optoelectronic devices, and systems including optoelectronic devices, are described herein. An optoelectronic device includes a light detector die that includes a light detector sensor area. A light source die is attached to a portion of the light detector die that does not include the light detector sensor area. An opaque barrier is formed between the light detector sensor area and the light source die, and a light transmissive material encapsulates the light detector sensor area and the light source die. Rather than requiring a separate base substrate (e.g., a PCB substrate) to which are connected a light source die and a light detector die, the light source die is connected to the light detector die, such that the light detector die acts as the base for the finished optoelectronic device. This provides for cost reductions and reduces the total package footprint.

Optoelectronic devices (e.g., optical proximity sensors), methods for fabricating optoelectronic devices, and systems including optoelectronic devices, are described herein. An optoelectronic device includes a light detector die that includes a light detector sensor area. A light source die is attached to a portion of the light detector die that does not include the light detector sensor area. An opaque barrier is formed between the light detector sensor area and the light source die, and a light transmissive material encapsulates the light detector sensor area and the light source die. Rather than requiring a separate base substrate (e.g., a PCB substrate) to which are connected a light source die and a light detector die, the light source die is connected to the light detector die, such that the light detector die acts as the base for the finished optoelectronic device. This provides for cost reductions and reduces the total package footprint.