A solid-state imaging element of the present disclosure a pixel. The pixel includes a charge accumulation unit that accumulates a charge photoelectrically converted by a photoelectric conversion unit, a reset transistor that selectively applies a reset voltage to the charge accumulation unit, an amplification transistor having a gate electrode electrically connected to the charge accumulation unit, and a selection transistor connected in series to the amplification transistor. Additionally, the solid-state imaging element includes a first wiring electrically connecting the charge accumulation unit and the gate electrode of the amplification transistor, a second wiring electrically connected to a common connection node of the amplification transistor and the selection transistor and formed along the first wiring, and a third wiring electrically connecting the amplification transistor and the selection transistor.

The present disclosure provides a display panel, a manufacturing method thereof and a display device. The display panel includes a substrate, a pixel structure layer on the substrate, and a sensor layer on a side of the pixel structure layer away from the substrate. The pixel structure layer includes a plurality of sub-pixels. At least one of the plurality of sub-pixels is configured to emit a first light. The sensor layer includes a photoelectric conversion device. The photoelectric conversion device is configured to receive a second light produced after the first light is reflected by an external object, and convert the second light into an electrical signal.

An inductor built-in substrate includes a core substrate having openings, a magnetic resin filled in the openings and having through holes, and through-hole conductors formed in the through holes respectively such that each of the through-hole conductors includes a metal film. The magnetic resin is formed such that each of the through holes has an angle part having an obtuse angle formed by an upper surface of the magnetic resin and a side wall of a respective one of the through holes.

A sensor sheet includes unit sensor sheets configured to detect a physical property value at multiple points on a sensor layer, each unit sensor sheet including a first substrate, and an electrode layer and the sensor layer sequentially formed on one side of the first substrate; and a wiring substrate to which the unit sensor sheets are configured to be coupled, the wiring substrate including a second substrate, and a plurality of wirings provided on one side of the second substrate. One side of the wiring substrate and one side of each unit sensor sheet are facing each other. A conductive bonding member configured to electrically couple each unit sensor sheet and the wiring substrate with each other, is included between the electrode layer of each unit sensor sheet and at least one of the wirings of the wiring substrate.

A pressure transducer and a fabrication method thereof are provided. The pressure transducer includes a light-emitting element, an interference light-filtering structure and a light-sensing element stacked on top of each other. The light-emitting element is configured to emit incident light onto the interference light-filtering structure. The interference light-filtering structure is configured to change its thickness in accordance with the pressure exerted on the pressure transducer and generate emergent light corresponding to the pressure. The light-sensing element is configured to detect the emergent light and generate an electrical signal corresponding to the emergent light.

A monolithic solar cell includes a first solar cell that is a sequential stack of an electrode, a silicon substrate, and an n-type emitter layer; a recombination layer disposed on the n-type emitter layer; an interfacial layer that is a double layer constituted of PEDOT:PSS and poly-TPD or PEDOT:PSS and PCDTBT, and that is disposed on the recombination layer; and a second solar cell that includes a p-type hole selective layer and a perovskite layer disposed on the p-type hole selective layer, the a p-type hole selective layer contacting and being integrated onto the interfacial layer of the first solar cell in a heat treatment during which the interfacial layer is partially decomposed, wherein the presence of the interfacial layer prevents a reduction in photoelectric conversion efficiency that occurs if the first solar cell and the second solar cell are combined without the presence of the interfacial layer.

Provided are a display substrate and a manufacturing method thereof, and a visible light communication apparatus. The display substrate includes a substrate, and the substrate includes a display region and a peripheral region surrounding the display region; the peripheral region includes a visible light signal receiving region surrounding the display region; the display substrate further includes a photosensitive sensing unit, the photosensitive sensing unit is located in the visible light signal receiving region and is configured to receive a visible light signal and convert the visible light signal into an electrical signal to achieve visible light communication.

A tandem photovoltaic device includes a silicon photovoltaic cell having a silicon layer, a perovskite photovoltaic cell having a perovskite layer, and an intermediate layer between a rear side of the perovskite photovoltaic cell and a front (sunward) side of the silicon photovoltaic cell. The front side of the silicon layer has a textured surface, with a peak-to-valley height of structures in the textured surface of less than 1 μm or less than 2 μm. The textured surface is planarized by the intermediate layer or a layer of the perovskite photovoltaic cell. Forming the tandem photovoltaic device includes texturing a silicon containing layer of a silicon photovoltaic cell and operatively coupling a perovskite photovoltaic cell comprising a perovskite layer to the silicon photovoltaic cell, thereby forming a tandem photovoltaic device and planarizing the textured surface of the silicon containing layer of the silicon photovoltaic cell.

A semiconductor device according to an embodiment of the present disclosure includes a substrate, a resistance change layer disposed on the substrate and including a plurality of carbon nanostructures, a channel layer disposed on the resistance change layer, a gate electrode layer disposed on the channel layer, and a source electrode layer and a drain electrode layer disposed to contact portions of the channel layer.

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: ##STR00001## In Chemical Formula 1, each substituent is the same as described in the detailed description.