A semiconductor apparatus includes, a substrate having a main surface, an upper electrode disposed above the substrate, a first lower electrode and a second lower electrode disposed between the substrate and the upper electrode, an isolation region disposed between the first lower electrode and the second lower electrode, a functional layer configured to perform light emission or photoelectric conversion, and an interface layer disposed at least on the first lower electrode. The semiconductor apparatus further includes a first insulator portion that is disposed between the first lower electrode and the second lower electrode and includes a first portion disposed at a position farther away from the main surface than an upper surface of the interface layer.

An electronic device capable of detecting a difference in the way of touch is provided. An electronic device capable of detecting a difference in the way of touch with a small number of components is provided. An electronic device capable of executing various types of processes with simple operation is provided. The electronic device includes a control portion and a display portion. The display portion has a function of displaying an image on a screen and includes a detection portion. The detection portion has a function of detecting a touch operation and a function of imaging, at least twice, a detection object touching the screen. The control portion has a function of calculating a difference between the area of the detection object in first imaging and the area of the detection object in second imaging to execute a different process depending on whether the difference is larger or smaller than a reference.

Provided is a structure 1 including an infrared light photoelectric conversion element 300 including an infrared light photoelectric conversion layer including a photoelectric conversion material that has a maximum absorption wavelength in an infrared range and generates a charge depending on absorbed light in the infrared range; a visible light photoelectric conversion element 200 that absorbs a light beam having a wavelength in a visible range and generates a charge depending on absorbed light; and an optical filter 400 that blocks and transmits a light beam of a predetermined wavelength, in which the infrared light photoelectric conversion element 300, the visible light photoelectric conversion element 200, and the optical filter 400 are provided on the same optical path, and each of the infrared light photoelectric conversion element 300 and the visible light photoelectric conversion element 200 is provided on an emission side of light from the optical filter 400. Provided is further an optical sensor and an image display device, each of which including the structure 1.

To achieve multifunctionality, a large number of components and the time and effort for implementing the components are required, which leads to an increase in the manufacturing cost and a reduction in yield. A matrix display portion and a matrix optical sensor portion are formed over one substrate. In addition, a driver circuit of the display portion and a driver circuit of the optical sensor portion formed over the same substrate as that for the display portion are built in one chip, whereby the number of components can be reduced. When the optical sensor is formed in a display panel, a barcode reader function or a scanner function can be given to the display panel. Furthermore, a function of authenticating fingerprints or the like or an input/output function of a touch sensor can be given to the display panel.

The present disclosure generally relates to multi-switch storage cells (MSSCs), three-dimensional MSSC arrays, and three-dimensional MSSC memory. Multi-switch storage cells include a cell select device, multiple resistive change elements, and an intracell wiring electrically connecting the multiple resistive change elements together and to the cell select device. MSSC arrays are designed (architected) and operated to prevent inter-cell (sneak path) currents between multi-switch storage cells, which prevents stored data disturb from adjacent cells and adjacent cell data pattern sensitivity. Additionally, READ and WRITE operations may be performed on one of the multiple resistive change elements in a multi-switch storage cell without disturbing the stored data in the remaining resistive change elements. However, controlled parasitic currents may flow in the remaining resistive change elements within the cell. Isolating each multi-switch storage cell in a three-dimensional MSSC array, enables in-memory computing for applications such as data processing for machine learning and artificial intelligence.

The current disclosure describes techniques for forming semiconductor structures having multiple semiconductor strips configured as channel portions. In the semiconductor structures, diffusion break structures are formed after the gate structures are formed so that the structural integrity of the semiconductor strips adjacent to the diffusion break structures will not be compromised by a subsequent gate formation process. The diffusion break extends downward from an upper surface until all the semiconductor strips of the adjacent channel portions are truncated by the diffusion break.

A method for the fabrication of organic electronic devices includes forming a fluoropolymer layer over a first area of a substrate and a first set of organic electronic devices. The first set of organic electronic devices are pre-fabricated on a second area of the substrate. The method further includes selectively removing the formed fluoropolymer layer from areas within the first area of the substrate by using a liquid solvent. The method further includes subsequent fabrication of organic electronic devices on the substrate.

An organic light-emitting display device having an integrated thin-film solar cell includes a substrate, a display disposed in a first area on the substrate to display images and including a first thin-film layer, and a thin-film solar cell disposed in a second area on the substrate to receive sunlight and generate electricity to drive the display and including a second thin-film layer, in which the first thin-film layer and the second thin-film layer include the same thin-film layer extending from the first area to the second area.

A display device includes: a first pixel group including first, second and third pixels arranged adjacent to each other and positioned successively along a first direction; and a second pixel group including fourth, fifth and sixth pixels arranged adjacent to the first pixel group and positioned successively along the first direction. Multiple ones of each of the first pixel group and the second pixel group are arranged in an alternating manner along both the first direction and a second direction intersecting the first direction. The second pixel and the fifth pixel face each other with respect to a first gate line while being connected to the first gate line, the first pixel and the fourth pixel face each other with respect to a second gate line while being connected to the second gate line.

Various embodiments provide a method of forming an organic inverter including a first transistor and a second transistor. The method may include providing a substrate with a dielectric layer formed on top of the substrate; depositing a first semiconductor polymer layer on a first region of the dielectric layer; forming a first electrode and a second electrode on the first semiconductor polymer layer, thereby forming the first transistor located at the first region of the dielectric layer; forming a plurality of grooves on a surface of a second region of the dielectric layer; depositing a second semiconductor polymer layer on the second region of the dielectric layer; and forming a first electrode and a second electrode on the second semiconductor polymer layer, thereby forming the second transistor located at the second region of the dielectric layer.