A thin-film transistor array includes a substrate and thin-film transistors positioned in matrix on the substrate. The thin-film transistors each include source and drain electrodes formed on a gate insulation layer, and a semiconductor layer formed on the gate insulation layer and positioned between the source and drain electrodes. The semiconductor layer is formed in stripes over the plurality of thin-film transistors such that one of the stripes has a long axis direction coinciding with a channel width direction of one of the thin-film transistors. The semiconductor layer has a cross section in a short axis direction of the stripe such that a thickness of the semiconductor layer gradually decreases outwardly from a center portion of the stripe.

A flexible array substrate structure and manufacturing method thereof are disclosed, in which the patterning process of an organic semi-conductive layer is achieved by using the inside wall of the opening of a color film layer as a bank, so that one mask can be saved. Also, a process for manufacturing a device can be simplified by an improved device structure, so that the flexible array substrate structure of the invention can be obtained by only using four masks.

An organic optoelectronic component and a method for operating the organic optoelectronic component are disclosed. In an embodiment the organic optoelectronic component includes at least one organic light emitting element including an organic functional layer stack having at least one organic light emitting layer between two electrodes and at least one organic light detecting element including at least one organic light detecting layer, wherein the at least one organic light detecting element and the at least one organic light emitting element are laterally arranged on a common substrate.

An organic optoelectronic component and a method for operating an organic optoelectronic component are disclosed. In an embodiment an organic optoelectronic component includes an organic light emitting element including an organic functional layer stack having an organic light emitting layer between two electrodes and an organic light detecting element including a first organic light detecting element including a first organic light detecting layer, and a second organic light detecting element including a second organic light detecting layer, wherein the organic light emitting element and the organic light detecting element are arranged laterally adjacent on a common substrate, wherein the first organic light detecting element is configured to detect ambient light, wherein the second organic light detecting layer of the second organic light detecting element is arranged between two non-transparent layers, the non-transparent layers shade the second organic light detecting layer of the second organic light detecting element from ambient light.

A method is specified for operating an organic optoelectronic component, which has at least one organic light-emitting element having an organic functional layer stack with at least one organic light-emitting layer between two electrodes and at least one organic light-emitting element having an organic light-detecting layer. These elements are arranged on a common substrate in laterally adjacent area regions. The at least one organic light-detecting element detects ambient light, which is incident onto the organic optoelectronic component. The intensity of the light emitted by the at least one organic light-emitting element is regulated depending on a signal of the at least one organic light-detecting element with a characteristic signal form.

A multi-functional active matrix display comprises a transparent front sheet, a semi-transparent layer of light emissive devices adjacent the rear side of the front sheet and forming a matrix of display pixels, and a solar cell layer located behind the light emissive devices for converting both ambient light and internal light7 from the light emissive devices into electrical energy, the solar cell layer including an array of electrodes on the front surface of the solar cell layer for use in detecting the location of a change in the amount of light impinging on a portion of the front surface of the solar cell layer.

The present disclosure relates to a semiconductor device comprising a first electrode, a second electrode, a third electrode, a fourth electrode, an insulating layer, and a nano-heterostructure. The nano-heterostructure comprises a first surface and a second surface. The first metallic carbon nanotube is located on the first surface and extends in a first direction. The semiconducting carbon nanotube is located on the first surface and extends in the first direction. The semiconducting carbon nanotube is parallel and spaced away from the first metallic carbon nanotube. The second metallic carbon nanotube is located on the second surface and extends in a second direction. An angle forms between the first direction and the second direction.

Various embodiments provide a thin film transistor (TFT), a fabrication method thereof, and a display apparatus including the TFT. A carbon nanotube layer is formed over a substrate. The carbon nanotube layer includes a first plurality of carbon nanotubes. A plurality of gaps are formed through the carbon nanotube layer to provide a first patterned carbon nanotube layer. Carbon nanotube structures each including a second plurality of carbon nanotubes are formed in the plurality of gaps. The carbon nanotube structures have a carrier mobility different from the first patterned carbon nanotube layer, thereby forming an active layer for forming active structures of the thin-film transistor.

A method for making a metal oxide semiconductor carbon nanotube thin film transistor circuit. A p-type carbon nanotube thin film transistor and a n-type carbon nanotube thin film transistor are formed on an insulating substrate and stacked with each other. The p-type carbon nanotube thin film transistor includes a first semiconductor carbon nanotube layer, a first drain electrode, a first source electrode, a functional dielectric layer, and a first gate electrode. The n-type carbon nanotube thin film transistor includes a second semiconductor carbon nanotube layer, a second drain electrode, a second source electrode, a first insulating layer, and a second gate electrode. The first drain electrode and the second drain electrode are electrically connected with each other. The first gate electrode and the second gate electrode are electrically connected with each other.

A metal oxide semiconductor carbon nanotube thin film transistor circuit includes a p-type carbon nanotube thin film transistor and a n-type carbon nanotube thin film transistor stacked with each other. The p-type carbon nanotube thin film transistor includes a first semiconductor carbon nanotube layer, a first drain electrode, a first source electrode, a functional dielectric layer, and a first gate electrode. The n-type carbon nanotube thin film transistor includes a second semiconductor carbon nanotube layer, a second drain electrode, a second source electrode, a first insulating layer, and a second gate electrode. The first drain electrode and the second drain electrode are electrically connected with each other. The first gate electrode and the second gate electrode are electrically connected with each other.