A display device including a base member, a circuit layer, a display layer, a thin film encapsulation layer, and a touch sensor layer. The base member includes a first area and a second area disposed adjacent to the first area. The circuit layer is disposed on the base member to cover the first area and to expose the second area. The display layer is disposed on the circuit layer to display an image. The thin film encapsulation layer is disposed on the display layer. The touch sensor layer is disposed on the thin film encapsulation layer and includes an organic layer extending from an upper portion of the thin film encapsulation layer to cover at least a portion of the exposed second area.

A fan-out wiring structure of a display panel is configured to electrically connect a signal transmission interface of a driving circuit to a signal receiving interface of a display area of the display panel. The fan-out wiring structure includes a first wiring layer and a second wiring layer. The first and the second wiring layers both define an extending area, a connecting area, and a bent area disposed between the extending area and the connecting area. The extending area and the connecting area of the first wiring layer each have a plurality of metal wires, and the bent area of the first wiring layer has a plurality of flexible wires. Each of the flexible wires is made of an organic electrically conductive material, and opposite ends of each of the flexible wires are connected to corresponding metal wires in the extending area and the connecting area, respectively.

An organic thin film transistor (OTFT), in particular thin-film field-effect transistor (OFET), that includes a substrate, a source electrode, a drain electrode, a gate electrode arranged in a top gate arrangement, and an organic semiconductor functional layer. The source electrode, the drain electrode, and the gate electrode are arranged in a coplanar layer structure. The organic thin-film transistor has an intermediate layer for the capacitive decoupling of the gate electrode from the source electrode and/or from the drain electrode.

In the present invention, a composition comprising two types of thienothiophene compounds selected from the group consisting of the compounds indicated by formulas (1) to (4) (in formulas (1) to (4), either one of R.sub.1 and R.sub.2 represents an alkyl group, an aromatic hydrocarbon group having an alkyl group or a heterocyclic group having an alkyl group, and the other represents a hydrogen atom, an aromatic hydrocarbon group, a heterocyclic group or a substituent represented by formula (5) (in formula (5), R.sub.3 represents an aromatic hydrocarbon group or a heterocyclic group)) can form an organic thin film which is homogeneous over a large area, and an organic semiconductor device including the organic thin film is capable of exhibiting high mobility.

Compositions of matter described as urea (multi)-urethane (meth)acrylate-silanes having the general formula R.sub.A—NH—C(O)—N(R.sup.4)—R.sup.11—[O—C(O)NH—R.sub.S].sub.n, or R.sub.S—NH—C(O)—N(R.sup.4)—R.sup.11—[O—C(O)NH—R.sub.A].sub.n. Also described are articles including a substrate, a base (co)polymer layer on a major surface of the substrate, an oxide layer on the base (co)polymer layer; and a protective (co)polymer layer on the oxide layer, the protective (co)polymer layer including the reaction product of at least one urea (multi)-urethane (meth)acrylate-silane precursor compound. The substrate may be a (co)polymer film or an electronic device such as an organic light emitting device, electrophoretic light emitting device, liquid crystal display, thin film transistor, or combination thereof. Methods of making such urea (multi)-urethane (meth)acrylate-silane precursor compounds, and their use in composite films and electronic devices are also described. Methods of using multilayer composite films as barrier films in articles selected from solid state lighting devices, display devices, and photovoltaic devices are also described.

A flexible device (1) includes an insulating substrate (2), a source electrode (3), a drain electrode (4), and an extended gate electrode (5) formed on a surface of the insulating substrate (2) at intervals, a channel (6) arranged at an interval between the source electrode (3) and the drain electrode (4), and a gate dielectric (7) formed so as to cover all of the channel (6) and a part of the extended gate electrode (5), in which the insulating substrate (2) is a flexible thin film having light transmissivity, the extended gate electrode (5) is a carbon material thin film having biocompatibility and light transmissivity, the channel (6) is an organic semiconductor thin film, and the gate dielectric (7) is an ionic liquid or an ionic gel.

A thin-film transistor and a method for producing a thin-film transistor are provided. The thin-film transistor comprising at least one semiconductor layer, at least one insulator layer, at least one source electrode, at least one drain electrode and at least one gate electrode, which are arranged on a substrate, wherein the at least one source electrode and/or the at least one drain electrode and/or the at least one gate electrode consist(s) of a layer system comprising a first layer composed of molybdenum oxide or tungsten oxide and, deposited thereon, a second layer comprising magnesium.

A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

An object of the present invention is to provide a n-type semiconductor element having improved n-type semiconductor characteristics and excellent stability with a convenient process, where the n-type semiconductor element includes: a substrate; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer for insulating the semiconductor layer from the gate electrode; and a second insulating layer positioned on the opposite side of the semiconductor layer from the gate insulating layer and in contact with the semiconductor layer, where the semiconductor layer contains nanocarbon, and the second insulating layer contains (a) a compound with an ionization potential in vacuum of 7.0 eV or less, and (b) a polymer.

A display device with a narrow bezel is provided. The display device includes a pixel circuit and a driver circuit which are provided on the same plane. The driver circuit includes a selection circuit and a buffer circuit. The selection circuit includes a first transistor. The buffer circuit includes a second transistor. The first transistor has a region overlapping with the second transistor. One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor. One of a source and a drain of the second transistor is electrically connected to the pixel circuit.