The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

Provided is a light-emitting device that has a high emission efficiency, excellent stability and temperature properties, and that generates light having a high color rendering property sufficient for practical use. This semiconductor light-emitting device comprises a semiconductor light-emitting element that emits blue light, a green phosphor that absorbs the blue light and emits green light, and an orange phosphor that absorbs the blue light and emits orange light, and is characterized in that the orange phosphor is an Eu-activated -SiAlON phosphor having an emission spectrum peak wavelength within a range of 595 to 620 nm.

The present disclosure relates to an insect trap using an ultraviolet light-emitting diode (UV LED) lamp, and more particularly, to an insect trap using, in place of a conventional UV light source lamp, a UV LED lamp that significantly increases the insect trapping efficiency. The insect trap according to the present disclosure includes: a UV LED lamp disposed in an air inlet portion of the duct, and including a printed circuit board (PCB) that has a UV LED chip mounted thereon; an installing portion for installing the UV LED lamp on; and a trapping portion provided near the installing portion.

A light-emitting device is provided. The light-emitting device comprises: a substrate; and an active structure on the substrate, the active structure comprising a well layer and a barrier layer, wherein the well layer comprises multiple different elements of group VA; wherein the substrate has a first intrinsic lattice constant, the well layer has a second intrinsic lattice constant, the barrier layer has a third intrinsic lattice constant, and the third intrinsic lattice constant is between the second intrinsic lattice constant and the first intrinsic lattice constant.

The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.

A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 m or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

A metal-doped quantum dot is provided. By doping metal in the intrinsic quantum dot, the quantum dot has fluorescent stability and may not be quenched at high temperature. Meanwhile, the metal-doped quantum dot is used to prepare red, green and blue quantum dot dielectric layers, and the red, green and blue quantum dot dielectric layers are packaged in a LED device to mix the red, green and blue light to obtain a white light. In addition, the above LED device can be used to prepare a LED bar with simple structure which is adapt for a side-incident backlight module and good for designing ultra-thin and narrow bezel product.

Embodiments disclosed herein include electronic packages with vents to prevent pressure buildup below a die. In an embodiment, an electronic package comprises a package substrate and a die attached to the package substrate by interconnects. In an embodiment, an underfill is under the die and surrounds the interconnects. In an embodiment, a void is provided in the underfill, and a vent is in the underfill. In an embodiment, the vent is fluidically coupled to the void and extends to an edge of the underfill.

A transistor can include a substrate, an epitaxial oxide layer on the substrate, and a gate layer. The substrate can include a first crystalline material. The epitaxial oxide layer can include a second oxide material including: Li and one of Ni, Al, Ga, Mg, Zn and Ge; or Ni and one of Li, Al, Ga, Mg, Zn and Ge; or Mg and one of Ni, Al, Ga, and Ge; or Zn and one of Ni, Al, Ga, and Ge. The gate layer can include a third oxide material. A bandgap of the third oxide material of the gate can be wider than a bandgap of the second oxide material of the epitaxial oxide layer. The transistor can also include a source electrical contact coupled to the epitaxial oxide layer, a drain electrical contact coupled to the epitaxial oxide layer, and a first gate electrical contact coupled to the gate layer.

A semiconductor nanoparticle including a first semiconductor nanocrystal including silver, indium, gallium, and sulfur, and a semiconductor nanoparticle including a second semiconductor nanocrystal including zinc, gallium, and sulfur, a method of manufacturing the same, and an electronic device including the same. The semiconductor nanoparticle is configured to emit a green light. The green light has a peak emission wavelength of about 500 nanometers to about 580 nanometers. In the semiconductor nanoparticle, a molar ratio of zinc to indium is about 0.1:1 to about 10:1.