A method of forming an optoelectronic device and a silicon device on a single chip. The method may include; forming a stack of layers on a substrate in a first and second region, the stack of layers include a semiconductor layer, a first insulator layer, a waveguide, a second insulator layer, and a device base layer; forming the device on the device base layer in the second region; forming a device insulator layer on the device and on the device base layer in the second region; and forming the optoelectronic device in the first region, the optoelectronic device has a bottom cladding layer, an active region, and a top cladding layer, wherein the bottom cladding layer is on the semiconductor layer, the active region is on the bottom cladding layer, and the top cladding layer is on the active region.

An X-ray detector according to the present disclosure comprises: a scintillator for converting incident X-rays into visible rays; a photoelectric conversion part, which is disposed below the scintillator and converts the visible rays into electrical signals; and a substrate disposed below the photoelectric conversion part, wherein the scintillator comprises a perovskite compound represented by the following chemical formula 1. [Chemical Formula 1] A.sub.3B.sub.2X.sub.5:Activator (In the chemical formula, A is a monovalent metal cation, B is a divalent metal cation, X is a monovalent anion, and the activator is thallium (Tl) or indium (In).)

A photodetector includes a semiconductor photodetection element including a semiconductor layer having a first surface and a second surface, and a light-condensing structure disposed on the first surface. The semiconductor layer includes a plurality of photodetection units. The light-condensing structure includes a main body portion and a metal layer. The main body portion has a plurality of first openings arranged to correspond to the plurality of photodetection units, and includes a plurality of layers stacked on the first surface. The metal layer covers an inner surface of each of the plurality of first openings to expose a region corresponding to each of the plurality of first openings in a surface of the semiconductor photodetection element. A surface of the metal layer in each of the plurality of first openings has a shape that spreads out to a side opposite to the semiconductor photodetection element.

An optical touch detection circuit and an optical touch display panel are provided. The optical touch detection circuit includes a photosensitive module and a detection module. The photosensitive module is configured to generate a photoelectric signal. The detection module is connected to the photosensitive module. The detection module is configured to implement an optical touch function based on the photoelectric signal. The provided optical touch detection circuit and optical touch display panel can improve a signal-to-noise ratio of the optical touch detection circuit. This is beneficial for accurately determining a position of an optical touch.

A semiconductor package includes a carrier plate, a photonic integrated circuit chip, an electronic integrated circuit chip and an interposer substrate. The carrier plate has a notch and a first surface and a second surfaces opposite to the first surface, and the notch extends from the first surface toward the second surface. The photonic integrated circuit chip is disposed within the notch. The electronic integrated circuit chip is disposed on the first surface of the carrier plate. The photonic integrated circuit chip and the electronic integrated circuit chip are disposed on the carrier through the interposer substrate.

A semiconductor package includes a package substrate including an alignment hole extending inwardly from a side surface of the package substrate, a photonic integrated circuit chip disposed on the package substrate, the of the package substrate chip including a groove extending inwardly from a side surface of the PIC chip and a photo-electron conversion unit including an edge coupler, and an optical fiber connector including a frame, an optical fiber mounted in the groove of the of the package substrate chip and passing through the frame, and an alignment pin extending from the frame to an inside of the alignment hole, wherein the edge coupler is located at one end of the photo-electron conversion unit.

A semiconductor substrate including a first main surface and a second main surface opposing each other is provided. The semiconductor substrate includes a first semiconductor region of a first conductivity type. The semiconductor substrate includes a plurality of planned regions where a plurality of second semiconductor regions of a second conductivity type forming pn junctions with the first semiconductor region are going to be formed, in a side of the second main surface. A textured region is formed on surfaces included in the plurality of planned regions, in the second main surface. The plurality of second semiconductor regions are formed in the plurality of planned regions after forming the textured region. The first main surface is a light incident surface of the semiconductor substrate.

[Object]

To provide an image capturing apparatus and electronic equipment that can suppress occurrence of a flare.

[Solving Means]

An image capturing apparatus includes a photoelectric conversion region having a photoelectric conversion portion for each pixel, and a light controlling region laminated on the photoelectric conversion region and configured to convert an optical characteristic incident thereon. The light controlling region has a plurality of unit structural bodies, and each of the plurality of unit structural bodies has a plurality of meta structural bodies. The plurality of meta structural bodies include two or more meta structural bodies whose optical characteristics are different from each other.

An imaging device of an embodiment of the present disclosure includes a light separator, a first pixel, a second pixel, and a light shielding unit. The light separator separates first wavelength light included in a first wavelength region and second wavelength light included in a second wavelength region from incident light, and includes a structure whose size is equal to or less than a wavelength of incident light. The first pixel includes a first photoelectric converter that selectively receives the first wavelength light and performs photoelectric conversion on the first wavelength light. The second pixel is adjacent to the first pixel and includes a second photoelectric converter that selectively receives the second wavelength light and performs photoelectric conversion on the second wavelength light. The light shielding unit is provided at a boundary between the first pixel and the second pixel and blocks incident light.

Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.