Magnetoelectric devices based on piezoelectric/magnetostrictive bilayers are provided. Also provided are methods of using the devices to modulate or to sense the magnetization of the magnetostrictive material. The devices include an island of magnetostrictive material that is strain-coupled to a thin layer of a piezoelectric material at an interface. A bottom electrode is placed in electrical communication with one surface of the piezoelectric film, and an unpaired top electrode is placed in electrical communication with a second, opposing surface of the piezoelectric film.

A system for controlled motion of circuit components to create reconfigurable circuits comprising: a support; a substrate operatively associated with the support; actuators operatively associated with the support configured to physically move circuit components and to move the circuit components into physical and electrical contact with the substrate; the substrate comprising at least one conductive segment arranged to electrically connect circuit components when electrical contacts of circuit components are placed in contact with at least one conductive segment; and control circuitry configured to control the first and second actuators to thereby position the circuit components relative to the substrate; whereby circuit function is determined by the selection of circuit components and the location and orientation of circuit components relative to the substrate and conductive segments to create a reconfigurable circuit.

The present disclosure is related to a display panel. The display panel may include a plurality of switch units. Each of the plurality of the switch units may include a first electrode; a second electrode; a third electrode; a fourth electrode opposite the first electrode; a piezoelectric material layer between the first electrode and the fourth electrode; a connecting electrode above the fourth electrode and electrically insulated from the fourth electrode; and a driving transistor comprising a driving gate. The driving gate may be the third electrode. An orthogonal projection of the second electrode and an orthogonal projection of the third electrode on a plane of the connecting electrode may overlap the connecting electrode respectively.

The present invention relates to an electrical component for a microelectromechanical systems (MEMS) device, in particular, but not limited to, an electromechanical actuator. In one aspect, the present invention provides an electrical component for a microelectromechanical systems device comprising: i) a substrate layer; ii) a plurality of adjacent electrical elements arranged over the substrate layer, where each electrical element is separated from a neighbouring electrical element by an intermediate region, each of the plurality of electrical elements comprising: a) a ceramic member; and b) first and second electrodes disposed adjacent the ceramic member such that a potential difference may be established between the first and second electrodes and through the ceramic member during operation; iii) a passivation layer, or a laminate of multiple passivation layers, at least partially overlying each of the plurality of electrical elements so as to provide electrical passivation between the first and second electrodes of each of the plurality of electrical elements; wherein the passivation layer, or at least an innermost layer of the laminate of passivation layers which is disposed adjacent each underlying electrical element, is discontinuous over at least one intermediate region between neighbouring electrical elements of the electrical component.

A quantum information processing device including a semiconductor substrate. An optical resonator is coupled to the substrate. The optical resonator supports a first photonic mode with a first resonator frequency. The quantum information processing device includes a non-gaseous chalcogen donor atom disposed within the semiconductor substrate and optically coupled to the optical resonator. The donor atom has a transition frequency in resonance with the resonator frequency. Also disclosed herein are systems, devices, articles and methods with practical application in quantum information processing including or associated with one or more deep impurities in a silicon substrate optically coupled to an optical structure.

A display apparatus includes a display panel configured to display an image and a sound generating device on a rear surface of the display panel. The sound generating device is configured to vibrate the display panel to generate sound. The sound generating device includes a first structure and a first passivation layer on one side of the first structure, at least a portion of the first passivation layer having a non-flat shape.

A force transducer for an electronic device can be operated in a drive mode and a sense mode simultaneously. In particular, the force transducer can provide haptic output while simultaneously receiving force input from a user. The force transducer is primarily defined by a monolithic piezoelectric body, a ground electrode, a drive electrode, and a sense electrode. The ground electrode and the drive electrode each include multiple electrically-electrically conductive sheets that extend into the monolithic body; the electrically conductive sheets of the ground electrode and the drive electrode are interdigitally engaged. The sense electrode of the force transducer is typically disposed on an exterior surface of the monolithic body.

A method for fabricating an array substrate, a display panel, and a display device is provided. The array substrate is divided into a plurality of pixel regions, and each of the pixel regions is provided with a pixel thin film transistor (TFT). At least one of the pixel regions is provided with a pressure component and a force TFT, the force TFT includes a first electrode, a second electrode and a control electrode, and the pressure component is connected to one of the first electrode and the control electrode of the force TFT. At least one of layer structures of the pixel TFT is disposed in the same layer as a corresponding layer structure of the force TFT.

The present disclosure provides a display substrate and a display device. The display substrate comprises a base, a plurality of display units arranged on the base, a signal line and a control unit, wherein the signal line is configured to connect adjacent two display units of the plurality of display units; at least a part of the signal line is made of a shape memory material, and the part is deformed to different degrees under different excitation conditions; the control unit is configured to detect deformation of the base and apply a corresponding excitation condition to the signal line according to the deformation of the base, so that the signal line is in a deformation state adaptive to the deformation of the base.

A transceiver apparatus for maximizing voltage. A voltage booster or transformer is implemented using piezoelectric thin films in substrates, preferably CMOS substrates where active processing of RF signals can lead to highly integrated and inexpensive ICs. The voltage gain is achieved by cascading multiple transducers, formed in the same piezoelectric thin film, or films cascaded in series on top of each other. An array of transducers are connected in parallel or series, connected to the input or output port electrodes. Other approaches include placing the receive transformer in a location where the diffracting field from the transmitter transducer is incident on the receive transducer generating a higher ultrasonic field at the receive transformer and increasing the voltage is to connect an array of transducers, formed in the same layer, or different layers of piezoelectric layer in parallel in drive mode when the pulse is transmitted.