A nano-mechanical acoustical resonator is designed and fabricated with CMOS compatible techniques to apply to mm-wave RF front-ends and 5G wireless communication systems which have extreme small scale and integrated in 3D sensors and actuators.

Disclosed is an afferent neuron circuit, which includes: a resistance Rc and a volatile threshold switching device TS, wherein the volatile threshold switching device TS is provided with a parasitic capacitor Cparasitic; a first end of the resistance Rc serves as a signal input terminal, and a second end of the resistance Rc serves as a signal output terminal; and a first end of the volatile threshold switching device TS is connected to the signal output terminal, and a second end of the volatile threshold switching device TS is grounded. The afferent neuron circuit provided in the content of the present disclosure has a simple structure and good scalability and is suitable for large-scale integration.

An apparatus may include an ultrasonic sensor system having an ultrasonic transceiver layer, a thin-film transistor (TFT) layer and a frequency-differentiating layer. In some examples, the frequency-differentiating layer may include a first frequency-differentiating layer area corresponding to a lower-frequency area of the ultrasonic sensor system. The first frequency-differentiating layer area may include a first material having a first acoustic impedance. In some such examples, the frequency-differentiating layer may include a second frequency-differentiating layer area corresponding to a higher-frequency area of the ultrasonic sensor system. The second frequency-differentiating layer area may include a second material having a second acoustic impedance. The first acoustic impedance may, for example, be higher than the second acoustic impedance.

An oscillator includes dual resonators mounted in a helium filled coldweld holder. One resonator operates at anti-resonance into a load capacitance of about 20 picofarads, and operates on a third overtone frequency under noncontrolled temperature conditions. The other resonator operates on a fundamental mode at anti-resonance in a load capacitance of about 32 picofarads. Resonator crystals in a dual-crystal resonator may include a theta-angle shift to equalize frequency versus temperature curves at temperature extremes.

The present disclosure discloses a flexible substrate and a fabrication method thereof, a method for detecting a bend, and a flexible display device. A flexible substrate includes a flexible base, and a surface acoustic wave generating element and a surface acoustic wave detecting element positioned on the flexible base. The surface acoustic wave generating element and the surface acoustic wave detecting element are configured to detect a bend of the flexible substrate.

The present disclosure is related to a display panel. The display panel may include a plurality of switch units. Each of the plurality of the switch units may include a first electrode; a second electrode; a third electrode; a fourth electrode opposite the first electrode; a piezoelectric material layer between the first electrode and the fourth electrode; a connecting electrode above the fourth electrode and electrically insulated from the fourth electrode; and a driving transistor comprising a driving gate. The driving gate may be the third electrode. An orthogonal projection of the second electrode and an orthogonal projection of the third electrode on a plane of the connecting electrode may overlap the connecting electrode respectively.

An integrated structure of crystal resonator and control circuit and an integration method therefor. A lower cavity is formed in a device wafer, and an upper cavity is formed in a substrate. A bonding process is then performed to bond the device wafer and the substrate together in such a manner that a piezoelectric vibrator is sandwiched between the device wafer and the substrate, with the lower and upper cavities being located on opposing sides of the piezoelectric vibrator, thus resulting in the formation of the crystal resonator. Moreover, the crystal resonator is brought into electrical connection with the control circuit, achieving integration of the two. This crystal resonator is more compact in size, less power-consuming and easier to integrate with other semiconductor components with a higher degree of integration, compared with traditional crystal resonators.

A transfer substrate for transferring an array of a plurality of micro light emitting diodes (micro LEDs) onto a target substrate. The transfer substrate includes a base substrate and an array of a plurality of electroactive actuators. A respective one of the plurality of electroactive actuators includes a ring-shaped frame structure substantially surrounding a central opening, the ring-shaped frame structure made of an electroactive material. The ring-shaped frame structure is configured to undergo a reversible deformation between a first state and a second state upon a change in an electric field applied on the ring-shaped frame structure. A distance between two positions on an inner wall of the ring-shaped frame structure and across the central opening having a first value in the first state and a second value in the second state. The first value is greater than the second value.

A structure and method for integrating a crystal resonator with a control circuit are disclosed. A lower cavity (120) is formed in a device wafer (100) containing the control circuit (110), and the device wafer (100) is then processed so that the lower cavity (120) is exposed from a back side (100D) of the device wafer (100). A substrate (600) in which an upper cavity (610) is formed at a corresponding location is bonded to the back side (100D) of the device wafer (100) in such a manner that the piezoelectric vibrator (500) is sandwiched between the device wafer (100) and the substrate (600), with the upper cavity (610) and the lower cavity (120) being aligned with each other on opposing side of the piezoelectric vibrator (500), thus resulting in the formation of the crystal resonator and simultaneously achieving the integration of the crystal resonator with the control circuit (110). This crystal resonator is more compact in size, less power-consuming and able to integrate with other semiconductor components with an increased degree of integration.

A method for integrating a crystal resonator with a control circuit and an integrated structure thereof. Integration of the crystal resonator with the control circuit (110) is accomplished by forming a lower cavity (120) in a device wafer (100) containing the control circuit (110) and an upper cavity (310) in a substrate (300), and by bonding the substrate (300) to the device wafer (100) in such a manner that the piezoelectric vibrator is sandwiched between the device wafer (100) and the substrate (300). A semiconductor die (700) can be further bonded to a back side of the same device wafer (100). This results in an increased degree of integration of the crystal resonator and allows on-chip modulation of its parameters. This crystal resonator is more compact in size, less power-consuming and easier to integrate with other semiconductor components with a higher degree of integration, compared with traditional crystal resonators.