Presented herein is a device including an insulator layer disposed over a substrate. An adhesion layer is disposed over the insulator layer and includes a semiconductor oxide, the semiconductor oxide includes a compound of a semiconductor element and oxygen. A semiconductor film layer is over the adhesion layer, the semiconductor film layer being a material that includes the semiconductor element, the semiconductor film layer having a different composition than the adhesion layer. Bonds at an interface between the insulator layer and the adhesion layer comprise oxygen-hydrogen bonds and oxygen-semiconductor element bonds. An interface between a dummy gate and a gate dielectric layer of a gate-last transistor structure may be similarly formed.

Presented herein is a device including an insulator layer disposed over a substrate. An adhesion layer is disposed over the insulator layer and includes a semiconductor oxide, the semiconductor oxide including a compound of a semiconductor element and oxygen. A semiconductor film layer is over the adhesion layer, the semiconductor film layer being a material including the semiconductor element, the semiconductor film layer having a different composition than the adhesion layer. Bonds at an interface between the insulator layer and the adhesion layer comprise oxygen-hydrogen bonds and oxygen-semiconductor element bonds.