Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.

A composite material, which can be used as an encapsulant for an ultraviolet device, is provided. The composite material includes a matrix material and at least one filler material incorporated in the matrix material that are both at least partially transparent to ultraviolet radiation of a target wavelength. The filler material includes microparticles and/or nanoparticles and can have a thermal coefficient of expansion significantly smaller than a thermal coefficient of expansion of the matrix material for relevant atmospheric conditions. The relevant atmospheric conditions can include a temperature and a pressure present during each of: a curing and a cool down process for fabrication of a device package including the composite material and normal operation of the ultraviolet device within the device package.

HD color video using monochromatic CMOS image sensors integrated in a 3D package is provided. An example 3DIC package for color video includes a beam splitter to partition received light of an image stream into multiple light outputs. Multiple monochromatic CMOS image sensors are each coupled to one of the multiple light outputs to sense a monochromatic image stream at a respective component wavelength of the received light. Each monochromatic CMOS image sensor is specially constructed, doped, controlled, and tuned to its respective wavelength of light. A parallel processing integrator or interposer chip heterogeneously combines the respective monochromatic image streams into a full-spectrum color video stream, including parallel processing of an infrared or ultraviolet stream. The parallel processing of the monochromatic image streams provides reconstruction to HD or 4K HD color video at low light levels. Parallel processing to one interposer chip also enhances speed, spatial resolution, sensitivity, low light performance, and color reconstruction.

Provided are photoelectric devices and electronic apparatuses including the photoelectric devices. A photoelectric device may include a photoactive layer, the photoactive layer may include a nanostructure layer configured to generate a charge in response to light and a semiconductor layer adjacent to the nanostructure layer. The nanostructure layer may include one or more quantum dots. The semiconductor layer may include an oxide semiconductor. The photoelectric device may include a first electrode and a second electrode that contact different regions of the photoactive layer. A number of the photoelectric conversion elements may be arranged in a horizontal direction or may be stacked in a vertical direction. The photoelectric conversion elements may absorb and thereby detect light in different wavelength bands without the use of color filters.

A method includes obtaining a photosensor substrate (236) having two opposing major surfaces. One of the two opposing major surfaces includes at least one photosensor row (230) of at least one photosensor element (232, 234), and the obtained photosensor substrate has a thickness equal to or greater than one hundred microns. The method further includes optically coupling a scintillator array (310) to the photosensor substrate. The scintillator array includes at least one complementary scintillator row (224) of at least one complementary scintillator element (226, 228), and the at least one complementary scintillator row is optically coupled to the at least one photosensor row (230) and the at least one complementary scintillator element is optically coupled to the at least one photosensor element. The method further includes thinning the photosensor substrate optically coupled to the scintillator producing a thinned photosensor substrate that is optically coupled to the scintillator and that has a thickness on the order of less than one hundred microns.

An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer.

An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer.

The present invention is based on a unique design of a novel structure, which incorporates two quantum dots of a different bandgap separated by a tunneling barrier. Upconversion is expected to occur by the sequential absorption of two photons. In broad terms, the first photon excites an electron-hole pair via intraband absorption in the lower bandgap dot, leaving a confined hole and a relatively delocalized electron. The second absorbed photon can lead, either directly or indirectly, to further excitation of the hole, enabling it to then cross the barrier layer. This, in turn, is followed by radiative recombination with the delocalized electron.

An optoelectronic component (100) comprises an optoelectronic semiconductor chip (10), a first contact area (31) and a second contact area (32), which is laterally offset with respect to the first contact area and is electrically insulated therefrom, and a housing element (40). The first contact area (31) is electrically conductively connected to the first semiconductor layer (21) and the second contact area (32) is electrically conductively connected to the second semiconductor layer (22) of the optoelectronic semiconductor chip. The first contact area (31) and the second contact area (32) project beyond the optoelectronic semiconductor chip laterally in each case. The housing element (40) is fixed to the first contact area (31) and the second contact area (32) in regions in which the first contact area (31) and the second contact area (32) project beyond the optoelectronic semiconductor chip laterally in each case. The housing element surrounds the optoelectronic semiconductor chip at least partly. A surface of the housing element that faces the optoelectronic semiconductor chip is embodied as reflective at least in partial regions. A wall of the housing element has a cutout (61).

A radiation detection apparatus comprises a sensor panel including a plurality of sensor units which detect radiation and are arrayed, each of the plurality of sensor units comprising a pixel array including a plurality of pixels which detect light and are two-dimensionally arranged, a scintillator layer which converts radiation into light, and a first scintillator protective layer disposed to cover the scintillator layer, and the radiation detection apparatus further comprising a second scintillator protective layer disposed to cover the plurality of sensor units.