An imaging apparatus includes a substrate, a first electrode, a second electrode, a photoelectric conversion layer, a first transistor, and a penetrating electrode. The photoelectric conversion layer is located between the first electrode and the second electrode and converts light into charges. The first transistor includes a first impurity region serving as one of a source and a drain, a second impurity region serving as the other of the source and the drain, and a first gate electrode. The penetrating electrode penetrates the substrate and electrically connects the first electrode to the first impurity region. The charges are accumulated in the first impurity region. A distance between the first impurity region and the penetrating electrode is longer in a plan view than a distance between the second impurity region and the penetrating electrode.

Methods and apparatus for an assembly having directly bonded first and second wafers where the assembly includes a backside surface and a front side surface. The first wafer includes IO signal connections vertically routed to the direct bonding interface by a first one of the bonding posts on the first wafer bonded to a first one of the bonding posts on the second wafer. The second wafer includes vertical routing of the IO signal connections from first one though the bonding posts on the second wafer to IO pads on a backside surface of the assembly.

Methods and apparatus for an assembly having directly bonded first and second wafers where the assembly includes a backside surface and a front side surface. The first wafer includes IO signal connections vertically routed to the direct bonding interface by a first one of the bonding posts on the first wafer bonded to a first one of the bonding posts on the second wafer. The second wafer includes vertical routing of the IO signal connections from first one though the bonding posts on the second wafer to IO pads on a backside surface of the assembly.

An image sensor including first and second pixel groups, each of which includes first to ninth pixels arranged to form a 33 array is disclosed. The image sensor further includes first to ninth transfer transistors disposed in each of the pixel groups to correspond to the first to ninth pixels, respectively, each of the first to ninth transfer transistors including a transfer gate and a floating diffusion region, a selection transistor disposed in at least one of the fourth to sixth pixels in each of the pixel group, and source follower transistors respectively disposed in at least two pixels of the first to third and seventh to ninth pixels in each of the pixel groups. Source follower gates of the source follower transistors may be connected to the floating diffusion region of each of the first to ninth transfer transistors.

Examples are disclosed that relate to the use of an optical data receiver comprising a multi-tap image sensor pixel for use in optical communications. The multi-tap pixel includes a photodetector and a plurality of taps. The optical data receiver further includes a controller comprising instructions executable for controlling the multi-tap pixel to, in a first period of time, perform a first integration on the photodetector and readout charge stored on a floating diffusion capacitor of a first tap in the plurality of taps using readout circuitry of the first tap. The controller further includes instructions executable for controlling the multi-tap pixel to, in a second period of time, perform a second integration on the photodetector and readout charge stored on a floating diffusion capacitor of a second tap in the plurality of taps using readout circuitry of the second tap.

The present disclosure concerns a light field detector for converting a vector of an 5 electromagnetic radiation into a chromatic output, comprising at least one azimuth detector on a transparent substrate and the at least one azimuth detector comprising at least two luminescent nanocrystal pixels having different emission wavelengths relative to each other. The present disclosure also concerns a light field sensor comprising the light field detector thereof and methods of fabricating the light field 10 detector.

A solid-state imaging device includes an N-type semiconductor layer, an element layer including a photoelectric conversion element and an active element, an interconnect layer providing an interconnect for the active element, and an element isolation trench penetrating the semiconductor layer. The element layer includes a P-type region and an N-type region. A first hole storage layer is formed on a surface of the semiconductor layer on a side opposite to the element layer. A second hole storage layer is formed in contact portions of the semiconductor layer and the element layer with the element isolation trench. The P-type region of the element layer and the first hole storage layer are connected to each other by the second hole storage layer.

An image sensor includes a substrate having a first surface and a second surface that are opposite to each other. The substrate including a plurality of unit pixel regions having photoelectric conversion regions and floating diffusion regions disposed adjacent to the first surface. A pixel isolation pattern is disposed in the substrate and is configured to define the plurality of unit pixel regions. An interconnection layer is disposed on the first surface of the substrate. The interconnection layer includes a conductive structure having a connection portion that extends parallel to the first surface of the substrate and is spaced apart from the first surface of the substrate. Contacts extend vertically from the connection portion towards the first surface of the substrate. Each of the contacts are spaced apart from each other with the pixel isolation pattern interposed therebetween. The contacts are coupled to the floating diffusion regions, respectively.

An optical detection apparatus and method for detecting a display panel is provided. The apparatus includes photosensitive units arranged in an array. A minimum distance between adjacent photosensitive units is less than a sub-pixel size of the display panel; the photosensitive units in adjacent rows have a position offset in a first direction; and an offset distance corresponding to the position offset is less than the sub-pixel size of the display panel.

An optical detection apparatus and method for detecting a display panel is provided. The apparatus includes photosensitive units arranged in an array. A minimum distance between adjacent photosensitive units is less than a sub-pixel size of the display panel; the photosensitive units in adjacent rows have a position offset in a first direction; and an offset distance corresponding to the position offset is less than the sub-pixel size of the display panel.