There is provided a photodetector, comprising a semiconductor heterostructure having in sequence: a first collection layer having substantially uniform doping of a first doping type; a radiation-absorbing layer having substantially uniform doping of the first doping type and having a band gap less than or equal to that of the first collection layer; and a barrier layer having a band gap greater than that of the radiation-absorbing layer, the top of the valence band of the barrier layer being substantially equal in energy to that of the radiation-absorbing layer where the first doping type is n-type or the bottom of the conduction band of the barrier layer being substantially equal in energy to that of the radiation-absorbing layer where the first doping type is p-type; wherein a first portion of the barrier layer is of the first doping type and a second portion of the barrier layer is of a second doping type, the first portion of the barrier layer being adjacent to the radiation-absorbing layer, forming a heterojunction within the barrier layer which gives rise to a depletion region within each portion of the barrier layer.

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a microbolometer array. The microbolometer array includes a plurality of microbolometers. Each microbolometer includes a microbolometer bridge that includes a first portion and a second portion. The first portion includes a resistive layer configured to capture infrared radiation. The second portion includes a second portion having a plurality of perforations defined therein.

An object is to provide an infrared sensor with a quantum dot optimized. The present invention provides an infrared sensor (1) including a light absorption layer (5) that absorbs an infrared ray, wherein the light absorption layer includes a plurality of spherical quantum dots (21). Alternatively, the present invention provides an infrared sensor including a light absorption layer that absorbs an infrared ray, wherein the light absorption layer includes a plurality of quantum dots and the quantum dot includes at least one kind of PbS, PbSe, CdHgTe, Ag.sub.2S, Ag.sub.2Se, Ag.sub.2Te, AgInSe.sub.2, AgInTe.sub.2, CuInSe.sub.2, CuInTe.sub.2, and InAs.

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a substrate having contacts and a surface. The surface defines a plane. The infrared imaging device further includes a microbolometer array coupled to the substrate. Each microbolometer of the microbolometer array includes a cross-section having a first section, a second section substantially parallel to the first section, and a third section joining the first section and the second section.

A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

Provided is a photodetector element having a photoelectric conversion element, an optical filter provided on a light incident side of the photoelectric conversion element, and an interlayer provided between the photoelectric conversion element and the optical filter, in which the photoelectric conversion element has a quantum dot layer, a first electrode, and a second electrode, the optical filter has predetermined spectral characteristics, and the interlayer includes at least one kind of atom selected from the group consisting of Si, Al, Zr, Sn, Zn, Ce, and Hf, or includes a paraxylene polymer, or has a water vapor permeability as determined by a method in accordance with JIS K 7129 of 110.sup.4 g/m.sup.2/day or less. Provided also are an image sensor and a method for manufacturing a photodetector element.

The present invention provides an invisible light flat plate detector and a manufacturing method thereof, an imaging apparatus, relates to the field of detection technology, can solve problems that the structure of the invisible light flat plate detector in the prior art is complex and the manufacturing method thereof is tedious. The invisible light flat plate detector of the present invention comprises a plurality of detection units and an invisible light conversion layer provided above the detection units for converting invisible light into visible light, each of the detection units comprising a thin film transistor provided on a substrate, and a first insulation layer, a first electrode, a semiconductor photoelectronic conversion module, a second electrode which are successively provided above the thin film transistor and of which projections on the substrate at least partially overlap with a projection of the thin film transistor on the substrate.

Methods and structures for providing single-color or multi-color photo-detectors leveraging cavity resonance for performance benefits. In one example, a radiation detector (110) includes a semiconductor absorber layer (210, 410A, 410B, 610, 810, 1010, 1030, 1210, 1230) having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer (220, 630, 830, 1020, 1040) coupled to the absorber layer (210, 410A, 41013, 610, 810, 1010, 1030, 1210, 1230) and having a second electrical conductivity type, and a resonant cavity coupled to the collector layer (220, 630, 830, 1020, 1040) and having a first mirror (240) and a second mirror (245).

Solid-state imaging with simultaneously capture of images in infrared and visible light is disclosed. In one example, a solid-state imaging device includes a lens optical system, first and second photoelectric conversion units, and a storage unit. The first photoelectric conversion unit detects visible light. The second photoelectric conversion unit is aligned with the first photoelectric conversion unit and detects infrared light. The storage unit stores an amount of aberration at a focal point between the visible light and the infrared light. After focusing on a focal point of light in a second wavelength range detected by the second photoelectric conversion unit, the solid-state imaging device compensates for the aberration at a focal point between the visible light and the infrared light on the basis of the amount of aberration.

An infrared sensor includes a substrate, a first electrode, a light-sensing unit, and a second electrode. The substrate is infrared-transmissible. The first electrode is disposed on a surface of the substrate and is infrared-transmissible. The light-sensing unit is disposed on a surface of the first electrode opposite to the substrate, is capable of absorbing and sensing infrared light, and includes a zinc oxide (ZnO)-based layer, a first lead sulfide (PbS)-based modification layer, and a second PbS-based modification layer that are sequentially stacked from the surface of the first electrode. The first PbS-based modification layer includes halide ion-modified PbS, and the second PbS-based modification layer includes thiol-modified PbS. In addition, the second electrode is disposed on a surface of the light-sensing unit opposite to the substrate, and is capable of forming a current flow path by cooperating with the light-sensing unit and the first electrode.