A thermoelectric module that has excellent thermal, electric properties, can realize high joining force between thermoelectric elements and an electrode, and can maintain stable joining even at a high temperature.

An optical sensor includes a support layer, a thermoelectric conversion material portion disposed on the support layer and including a strip-shaped first material layer that converts thermal energy into electrical energy and a strip-shaped second material layer that is electrically conductive, and a light absorbing film disposed on the thermoelectric conversion material portion to form a temperature difference in a longitudinal direction of the first material layer. The first material layer includes a first region and a second region. The second material layer includes a third region and a fourth region connected to the second region. The optical sensor further includes a first electrode electrically connected to the first region, and a second electrode disposed apart from the first electrode and electrically connected to the third region. The first material layer has a width, perpendicular to the longitudinal direction, of 0.1 μm or more.

The present disclosure relates to a thermoelectric material, and more specifically to a superlattice thermoelectric material and a thermoelectric device using the same. The superlattice thermoelectric material has a composition of a following Chemical Formula 1:
(AX).sub.n(D.sub.2X′.sub.3).sub.m  ,<Chemical Formula 1> wherein, in the Chemical Formula 1, A is at least one of Ge, Sn, and Pb, X is a chalcogen element, and at least one of S, Se, and Te, D is at least one of Bi and Sb, each of n and m is an integer between 1 and 100, and A or X is at least partially substituted with a dopant.

A semiconductor substrate contains a clathrate compound of the following General Formula (I). The semiconductor substrate includes a variable-composition layer which includes a pn junction and where composition of the clathrate compound varies along a thickness direction. A rate of change in y in the thickness direction of at least a portion of the variable-composition layer is 1×10.sup.−4/μm or more.
A.sub.xB.sub.yC.sub.46-y   (I) In General Formula (I), A represents at least one element selected from the group consisting of Ba, Na, Sr, and K, B represents at least one element selected from the group consisting of Au, Ag, Cu, Ni, and Al, and C represents at least one element selected from the group consisting of Si, Ge, and Sn, x is 7 to 9, and y is 3.5 to 6 or 11 to 17.

A thermoelectric module includes: unit thermoelectric materials including N-type thermoelectric materials and P-type thermoelectric materials and arranged on one surface of a first substrate; first electrodes each electrically connected to one end of a respective one of the N-type thermoelectric materials or to one end of a respective one of the P-type thermoelectric materials; second electrodes each disposed to be spaced apart from the other end of the respective one of the N-type thermoelectric materials and the other end of the respective one of the P-type thermoelectric materials by a predetermined gap; and a second substrate supporting the second electrodes, in which each of the second electrodes is electrically connected to the second end of the respective one of the N-type thermoelectric materials and the second end of the respective one of the P-type thermoelectric materials when a pressing force is applied to the second substrate.

A thermoelectric conversion material includes: a base material that is a semiconductor; and an additive element that differs from an element constituting the base material. An additional band formed of the additive element is present within a forbidden band of the base material. A density of states of the additional band has a ratio of greater than or equal to 0.1 relative to a maximum value of a density of states of a valence band adjacent to the forbidden band of the base material.

A thermoelectric conversion material is constituted of a semiconductor that contains a constituent element and an additive element having a difference of 1 in the number of electrons in an outermost shell from the constituent element, the additive element having a concentration of not less than 0.01 at % and not more than 30 at %. The semiconductor has a microstructure including an amorphous phase and a granular crystal phase dispersed in the amorphous phase. The amorphous phase includes a first region in which the concentration of the additive element is a first concentration, and a second region in which the concentration of the additive element is a second concentration lower than the first concentration. The first concentration and the second concentration have a difference of not less than 15 at % and not more than 25 at % therebetween.

A method for manufacturing a thermoelectric device where a first part formed in a first doped material and a second part formed in a second doped material each shaped like a comb are manufactured, before being assembled together and electrically connected. Then, the first base of the first part is sectioned into at least one first area and the second base of the second part is sectioned into at least one second area. Each first branch of the first part and each second branch of the second part separated respectively constitute a first element and a second element of a thermoelectric junction, electrically connected via portion of the second base that links them. In addition, each first branch and each second branch separated by a second area constitute a first element and a second element of a thermoelectric junction, electrically connected via the portion of the first base.

A thermoelectric conversion material consists of a non-doped sintered body of a magnesium-based compound, in which an electric resistance value is 1.0×10.sup.−4 Ω.Math.m or less. The magnesium-based compound is preferably one or more selected from a MgSi-based compound, a MgSn-based compound, a MgSiSn-based compound, and a MgSiGe-based compound.

The purpose of the present invention is to provide a highly accurate and highly reliable physical quantity sensor wherein an error due to stress applied to a sensor element of the physical quantity sensor is reduced. This physical quantity sensor device is provided with: a hollow section formed in a Si substrate; an insulating film covering the hollow section; and a heating section formed in the insulating film. The sensor device is also provided with a detection element that detects the temperature of the insulating film above the hollow section, the detection element is provided with a first silicon element and a second silicon element, and the first silicon element and the second silicon element are doped with different impurities, respectively.