A method of manufacturing a piezoelectric element includes: forming a patterned mask layer over a substrate, in which the patterned mask layer has an opening exposing a portion of the substrate; forming a piezoelectric element in the opening; and removing the patterned mask layer to obtain the piezoelectric element, in which the piezoelectric element has a central portion and a peripheral portion adjacent to the central portion, and the peripheral portion has a maximum height greater than a height of the central portion.

A piezoelectric element includes a first and a second electrode, a piezoelectric layer between the first electrode and the second electrode, and an orientation control layer between the first electrode and the piezoelectric layer. The orientation control layer contains perovskite complex oxide containing potassium, sodium, calcium, and niobium and preferentially oriented in the (100) plane.

A thin-film piezoelectric material substrate includes an insulator on Si substrate and a thin-film laminated part. The insulator on Si substrate has a substrate for deposition made of silicon and an insulating layer formed on a surface of the substrate for deposition. The thin-film laminated part is formed on a top surface of the insulating layer. The thin-film laminated part has a YZ seed layer including yttrium and zirconium, and formed on the top surface; a lower electrode film laminated on the YZ seed layer; a piezoelectric material film made of lead zirconate titanate, shown by general formula Pb(Zr.sub.xTi.sub.(1-x))O.sub.3, and formed on the lower electrode film; and an upper electrode film laminated on the piezoelectric material film.

A method of making a piezoelectric device comprising providing a deposition chamber, the deposition chamber having reduced pressure therein; loading a substrate into the deposition chamber; sputter depositing hexagonal 001 oriented titanium on the substrate; providing an oxygen anneal to convert 001 oriented titanium into 100 oriented rutile TiO.sub.2; sputter depositing a 111 or 100 oriented textured conducting material for use as an electrode; sputter depositing a hexagonal 001 oriented titanium and providing an oxygen anneal in a lead oxide environment to convert 001 oriented titanium into 100 oriented rutile TiO.sub.2 or Pb.sub.xTi.sub.1-xO.sub.3; sputter depositing textured lead zirconate titanate PbZr.sub.xTi.sub.1-xO.sub.3 having an 001 orientation as a piezoelectric layer, and sputter depositing a textured electrode on top of the textured lead zirconate titanate; whereby processing of the layers within the deposition chamber provides minimized exposure to ambient contamination and improved texturing in the resulting films.

An electronic device includes a piezoelectric module, a sensing module and a buffer element. The piezoelectric module includes a substrate and a piezoelectric element. The substrate defines an opening penetrating the substrate. The piezoelectric element is disposed on the substrate and across the opening of the substrate. The sensing module is disposed over the piezoelectric module. The buffer element is disposed between the piezoelectric module and the sensing module.

A piezoelectric device includes a substrate, a lower electrode disposed above the substrate, a lower bonding layer disposed on the lower electrode, a piezoelectric layer containing a piezoelectric material disposed on an upper surface of the lower bonding layer, and an upper electrode disposed above the piezoelectric layer. The lower bonding layer includes an electrode material portion containing an electrode material of the lower electrode and a piezoelectric material portion containing a piezoelectric material. The electrode material portion and the piezoelectric material portion interdigitate with each other in the lower bonding layer.

Provided are a structure including: a substrate; a first layer provided on the substrate; a second layer provided on the first layer; and a third layer provided on the second layer, in which the first layer is a layer containing a compound represented by a chemical formula MIn.sub.2O.sub.4 using M as a metal element, the second layer is a metal layer having a face-centered cubic structure, and the third layer is a ferroelectric film, and a sensor using the structure.

A stacked film is a stacked film including an oxide film, and a metal film provided on the oxide film, in which the oxide film includes a ZrO.sub.2 film of which a main surface is a (001) plane, the metal film includes a Pt film or a Pd film that has a single orientation and of which a main surface is a (001) plane, and a [100] axis of the ZrO.sub.2 film and a [100] axis of the metal film are parallel to an interface between the oxide film and the metal film, and the axes of both are parallel to each other.

The present application discloses a display panel free of a liquid crystal layer including a base substrate, and an array of a plurality of pixels on the base substrate, each of the plurality of pixels comprising at least one subpixel. Each subpixel includes an electroactive layer on the base substrate; and a light transmission layer on the base substrate configured to be actuated by the electroactive layer so that light transmittance of the light transmission layer in the at least one subpixel changes in response to a change in an electrical signal applied to the electroactive layer to achieve levels of gray scale; wherein the light transmission layer is reversibly deformable.

Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).