Each of pixels disposed in a matrix form on a substrate includes a photoelectric conversion unit that converts incident light into a signal charge, a reading electrode that reads the signal charge from the photoelectric conversion unit, and a vertical transfer electrode that constitutes a vertical transfer unit. A plurality of first pixels, and a plurality of second pixels disposed adjacent to the first pixels are alternately disposed for each row, and also alternately disposed for each column to form a checkered pattern. The reading electrode of each of the pixels is disposed such that a plurality of signal charges read from the identical photoelectric conversion unit contain a dark current generated under the common reading electrode.

A semiconductor substrate is provided with a plurality of photosensitive regions on a first principal surface side. An insulating film has a third principal surface and a fourth principal surface opposed to each other, and is arranged on the semiconductor substrate so that the third principal surface is opposed to the first principal surface. A cross section parallel to a thickness direction of the semiconductor substrate, of a region corresponding to each photosensitive region in the first principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous. A cross section parallel to a thickness direction of the insulating film, of a region corresponding to each photosensitive region in the third principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous corresponding to the first principal surface. The fourth principal surface is flat.