Patent classifications
H10F39/95
PHOTOSENSITIVE CHIP, MANUFACTURING METHOD THEREOF AND PHOTOSENSITIVE MODULE
A photosensitive chip, a manufacturing method thereof, and a photosensitive module are provided. The photosensitive chip includes an isosceles trapezoid body, a positive electrode, and a negative electrode. The isosceles trapezoid body comprises an N-type semiconductor layer and a P-type semiconductor layer. The P-type semiconductor layer is disposed adjacent to the N-type semiconductor layer. The positive electrode is electrically connected to the P-type semiconductor layer, and the negative electrode is electrically connected to the N-type semiconductor layer.
PHOTOSENSITIVE CHIP, MANUFACTURING METHOD THEREOF AND PHOTOSENSITIVE MODULE
A photosensitive chip, a manufacturing method thereof, and a photosensitive module are provided. The photosensitive chip includes an isosceles trapezoid body, a positive electrode, and a negative electrode. The isosceles trapezoid body comprises an N-type semiconductor layer and a P-type semiconductor layer. The P-type semiconductor layer is disposed adjacent to the N-type semiconductor layer. The positive electrode is electrically connected to the P-type semiconductor layer, and the negative electrode is electrically connected to the N-type semiconductor layer.
Embedded metasurface
A sensing device includes a first die, having a front and a back side, defining a first array of first sensor elements outputting first electrical signals in response to optical radiation that is incident on the front side of the first die in a first band of wavelengths. A second die has a first side fixedly aligned with the first die back side and defines a second array of second sensor elements that output second electrical signals in response to the optical radiation in a second band of wavelengths, different from the first band, which passes through the first die and is incident on the second die first side. An optical metasurface is disposed between the first and second dies and directs the optical radiation in the second band of wavelengths onto the second sensor elements. Readout circuitry reads the first and second electrical signals out of the device.
Embedded metasurface
A sensing device includes a first die, having a front and a back side, defining a first array of first sensor elements outputting first electrical signals in response to optical radiation that is incident on the front side of the first die in a first band of wavelengths. A second die has a first side fixedly aligned with the first die back side and defines a second array of second sensor elements that output second electrical signals in response to the optical radiation in a second band of wavelengths, different from the first band, which passes through the first die and is incident on the second die first side. An optical metasurface is disposed between the first and second dies and directs the optical radiation in the second band of wavelengths onto the second sensor elements. Readout circuitry reads the first and second electrical signals out of the device.
SEMICONDUCTOR APPARATUS, EQUIPMENT, SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS
A semiconductor apparatus includes a first semiconductor substrate, a second semiconductor substrate, and at least one semiconductor chip. The at least one semiconductor chip is bonded to the first semiconductor substrate so as to protrude from a first main surface of the first semiconductor substrate. The second semiconductor substrate having at least one recess is bonded to at least one of a part of the first main surface and the at least one semiconductor chip. The at least one semiconductor chip is disposed in the at least one recess. The at least one semiconductor chip is connected to the second semiconductor substrate via a wiring included in the first semiconductor substrate.
SEMICONDUCTOR APPARATUS, EQUIPMENT, SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS
A semiconductor apparatus includes a first semiconductor substrate, a second semiconductor substrate, and at least one semiconductor chip. The at least one semiconductor chip is bonded to the first semiconductor substrate so as to protrude from a first main surface of the first semiconductor substrate. The second semiconductor substrate having at least one recess is bonded to at least one of a part of the first main surface and the at least one semiconductor chip. The at least one semiconductor chip is disposed in the at least one recess. The at least one semiconductor chip is connected to the second semiconductor substrate via a wiring included in the first semiconductor substrate.
ELECTROMAGNETIC SHIELDING CAP FOR ELECTRONIC CIRCUITS
An electromagnetic shielding cap for an electronic circuit includes a main surface and four lateral surfaces. A recessed portion is present in the first lateral surface provided by an open cavity in and at a base of the first lateral surface. An electronic circuit, such as an optical transmission and/or reception device, includes a chip bonded to a first main surface of a substrate. The electromagnetic shielding cap is mounted over the chip to the first main surface of the substrate. The circuit further includes an additional cap made of polymer material. The electromagnetic shielding cap is assembled to the substrate using a solder joint soldered both to a metal pad of the substrate and to at least one wall of the recessed portion. The second cap may be positioned over or under the first cap.
ELECTROMAGNETIC SHIELDING CAP FOR ELECTRONIC CIRCUITS
An electromagnetic shielding cap for an electronic circuit includes a main surface and four lateral surfaces. A recessed portion is present in the first lateral surface provided by an open cavity in and at a base of the first lateral surface. An electronic circuit, such as an optical transmission and/or reception device, includes a chip bonded to a first main surface of a substrate. The electromagnetic shielding cap is mounted over the chip to the first main surface of the substrate. The circuit further includes an additional cap made of polymer material. The electromagnetic shielding cap is assembled to the substrate using a solder joint soldered both to a metal pad of the substrate and to at least one wall of the recessed portion. The second cap may be positioned over or under the first cap.
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
In one example, an electronic device comprises a substrate including a cavity defined in an upper side of the substrate. An electronic component can be disposed over the substrate, and a lid can be disposed over the substrate and including a lid stopper in the cavity. A pedestal of the lid can be positioned over the electronic component. The lid can include a channel adjacent the pedestal. A lens can be disposed over the electronic component and on the pedestal. Other examples and related methods are also disclosed herein.
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
In one example, an electronic device comprises a substrate including a cavity defined in an upper side of the substrate. An electronic component can be disposed over the substrate, and a lid can be disposed over the substrate and including a lid stopper in the cavity. A pedestal of the lid can be positioned over the electronic component. The lid can include a channel adjacent the pedestal. A lens can be disposed over the electronic component and on the pedestal. Other examples and related methods are also disclosed herein.