A cooler includes a top plate having a heat dissipation surface, a bottom plate, a plurality of fins each connected to the heat dissipation surface, a peripheral wall surrounding the fins between the top plate and the bottom plate, and a refrigerant inlet and outlet provided at respective two ends of the peripheral wall in a first direction. Each fin has an inclined portion extending in an extending direction with first and second ends, and is inclined such that the second end is displaced toward the inlet relative to the first end in a first side view and toward one of opposite sides of the peripheral wall in a second direction perpendicular to the first direction relative to the first end in a second side view. The first and second side views are side views of the cooler viewed from the second direction and the first direction, respectively.

A cooler includes a top plate having a heat dissipation surface, a bottom plate, a plurality of fins each connected to the heat dissipation surface, a peripheral wall surrounding the fins between the top plate and the bottom plate, and a refrigerant inlet and outlet provided at respective two ends of the peripheral wall in a first direction. Each fin has an inclined portion extending in an extending direction with first and second ends, and is inclined such that the second end is displaced toward the inlet relative to the first end in a first side view and toward one of opposite sides of the peripheral wall in a second direction perpendicular to the first direction relative to the first end in a second side view. The first and second side views are side views of the cooler viewed from the second direction and the first direction, respectively.

A brain-organoid complementary metal-oxide semiconductor (CMOS) processor and an associated method can be provided. For example, the CMOS structure can be a CMOS processor, which can be a co-processor. In addition or alternatively, the CMOS processor can include at least one culture which can comprise at least one brain organoid, and at least one CMOS device configured to interface with the at least one brain organoid. The CMOS device(s) can be configured to stimulate and record information from the brain organoid(s).

A brain-organoid complementary metal-oxide semiconductor (CMOS) processor and an associated method can be provided. For example, the CMOS structure can be a CMOS processor, which can be a co-processor. In addition or alternatively, the CMOS processor can include at least one culture which can comprise at least one brain organoid, and at least one CMOS device configured to interface with the at least one brain organoid. The CMOS device(s) can be configured to stimulate and record information from the brain organoid(s).

Disclosed herein are methods, systems and devices including a substrate having a first attachment location and a second attachment location, a first multi-device package located within the first attachment location, a first embedded circuit located within the second attachment location, and a first compute device located on the substrate and at least partially over the first attachment location and the second attachment location.

Disclosed herein are methods, systems and devices including a substrate having a first attachment location and a second attachment location, a first multi-device package located within the first attachment location, a first embedded circuit located within the second attachment location, and a first compute device located on the substrate and at least partially over the first attachment location and the second attachment location.

A microelectronic device includes a memory array structure including array regions having volatile memory cells, a control circuitry structure vertically above and bonded to the memory array structure, and global routing tiers. The control circuitry structure includes control circuitry regions horizontally overlapping the array regions and comprising control logic circuitry coupled to the volatile memory cells. The global routing tiers vertically overlie the control logic circuitry. Some global routing tiers respectively include groups of global routing structures confined within horizontal areas of the control circuitry regions. The global routing structures of the groups horizontally extend in parallel in a first direction. Some other global routing tiers respectively include additional groups of global routing structures extending beyond the horizontal areas of the control circuitry regions. The global routing structures of the additional groups horizontally extend in parallel in a second direction orthogonal to the first direction.

A microelectronic device includes a memory array structure including array regions having volatile memory cells, a control circuitry structure vertically above and bonded to the memory array structure, and global routing tiers. The control circuitry structure includes control circuitry regions horizontally overlapping the array regions and comprising control logic circuitry coupled to the volatile memory cells. The global routing tiers vertically overlie the control logic circuitry. Some global routing tiers respectively include groups of global routing structures confined within horizontal areas of the control circuitry regions. The global routing structures of the groups horizontally extend in parallel in a first direction. Some other global routing tiers respectively include additional groups of global routing structures extending beyond the horizontal areas of the control circuitry regions. The global routing structures of the additional groups horizontally extend in parallel in a second direction orthogonal to the first direction.

A semiconductor device includes a first inductor including a first coil wiring located on a first plane, a second coil wiring of which at least a part is located on the first plane, and a drive circuit that supplies a common signal to the first coil wiring and the second coil wiring. A first region surrounded by the first coil wiring and a second region surrounded by the second coil wiring overlap each other in a direction that is perpendicular to the first plane.

A semiconductor device includes a first inductor including a first coil wiring located on a first plane, a second coil wiring of which at least a part is located on the first plane, and a drive circuit that supplies a common signal to the first coil wiring and the second coil wiring. A first region surrounded by the first coil wiring and a second region surrounded by the second coil wiring overlap each other in a direction that is perpendicular to the first plane.