A chip integrated structure includes a package substrate and a first chip structure layer. The first chip structure layer is located on a side of the package substrate, and is electrically connected to the package substrate. The first chip structure layer includes a scribe line structure and a plurality of first dies. The scribe line structure connects the plurality of first dies and electrically separates the plurality of first dies.

A power supply circuit includes: a feedback control circuit configured to control a switch output stage for generating an output voltage of a secondary circuit system from an input voltage of a primary circuit system while isolating between the primary circuit system and the secondary circuit system; and an overcurrent protection circuit configured to restrict a sense voltage corresponding to a primary current of the switch output stage to a predetermined overcurrent detection value or less. The overcurrent protection circuit stepwise increases the overcurrent detection value over a soft start period when a second power supply voltage is started or restarted.

A power supply circuit includes: a feedback control circuit configured to control a switch output stage for generating an output voltage of a secondary circuit system from an input voltage of a primary circuit system while isolating between the primary circuit system and the secondary circuit system; and an overcurrent protection circuit configured to restrict a sense voltage corresponding to a primary current of the switch output stage to a predetermined overcurrent detection value or less. The overcurrent protection circuit stepwise increases the overcurrent detection value over a soft start period when a second power supply voltage is started or restarted.

A shielded conductive device, a method for forming the same and an electronic package assembly is provided. The shielded conductive device comprises: a dielectric base having a top surface and a bottom surface, and a lateral surface extending between the top surface and the bottom surface; top conductive pads and bottom conductive pads formed on the top surface and the bottom surface of the dielectric base, respectively; a plurality of conductive pillars extending through the dielectric base and electrically connecting the top conductive pads with the bottom conductive pads, wherein the plurality of conductive pillars comprise at least one reference conductive pillar and at least one signal conductive pillar; and a shielding layer formed on the lateral surface of the dielectric base, and wherein the shielding layer is electrically connected to the at least one reference conductive pillar through at least a corresponding top conductive pad or bottom pad.

A shielded conductive device, a method for forming the same and an electronic package assembly is provided. The shielded conductive device comprises: a dielectric base having a top surface and a bottom surface, and a lateral surface extending between the top surface and the bottom surface; top conductive pads and bottom conductive pads formed on the top surface and the bottom surface of the dielectric base, respectively; a plurality of conductive pillars extending through the dielectric base and electrically connecting the top conductive pads with the bottom conductive pads, wherein the plurality of conductive pillars comprise at least one reference conductive pillar and at least one signal conductive pillar; and a shielding layer formed on the lateral surface of the dielectric base, and wherein the shielding layer is electrically connected to the at least one reference conductive pillar through at least a corresponding top conductive pad or bottom pad.

A method of manufacturing an electronic device is provided. The method includes the following steps: providing a substrate; forming a circuit structure on the substrate; forming a hole in the substrate; forming a conductive element in the hole; bonding a chip to the circuit structure; and performing a first cutting step to cut a portion of the circuit structure and the substrate, and forming a groove in the substrate.

An electronic device includes a functional substrate, a conductive layer having a plurality of circuitries on the functional substrate, a plurality of redistribution-layered substrates arranged along one surface of the functional substrate, a plurality of functional components arranged on the functional substrate, and a plurality of computing and memory components arranged on one side of the redistribution-layered substrate.

A semiconductor package includes a first chip including a first die-to-die interface with a first plurality of flip-flops, and a second chip including a second die-to-die interface with a second plurality of flip-flops, and an interposer configured to provide paths for data to flow between the first die-to-die interface and the second die-to-die interface. The interposer is mechanically coupled to the first chip and to the second chip by a first hybrid bond and a second hybrid bond, respectively, the interposer including a first plurality of interposer vias coupled to the first plurality of flip-flops across the first hybrid bond, a second plurality of interposer vias coupled to the second plurality of flip-flops across the second hybrid bond, and a plurality of lateral metal traces coupling respective vias among the first plurality of interposer vias to respective vias among the second plurality of interposer vias to provide the paths.

A semiconductor package includes a first chip including a first die-to-die interface with a first plurality of flip-flops, and a second chip including a second die-to-die interface with a second plurality of flip-flops, and an interposer configured to provide paths for data to flow between the first die-to-die interface and the second die-to-die interface. The interposer is mechanically coupled to the first chip and to the second chip by a first hybrid bond and a second hybrid bond, respectively, the interposer including a first plurality of interposer vias coupled to the first plurality of flip-flops across the first hybrid bond, a second plurality of interposer vias coupled to the second plurality of flip-flops across the second hybrid bond, and a plurality of lateral metal traces coupling respective vias among the first plurality of interposer vias to respective vias among the second plurality of interposer vias to provide the paths.

Methods, systems, and devices for multiple-stack memory system with integrated cooling unit are described. A multiple-stack memory system may include a first memory device that comprises a first logic die and a first stack of memory dies. The multiple-stack memory system may include a second memory device that comprises a second logic die and a second stack of memory dies. A cooling unit of the multiple-stack memory system may be coupled with a bottom memory die of the first stack of memory dies and coupled with a top memory die of the second stack of memory dies.