This semiconductor light emitting device includes an emission layer, a passivation layer on the emission layer, and a first adhesive layer on the passivation layer. The passivation layer may include a plurality of grooves, and the first adhesive layer may be disposed in each of the plurality of grooves. Arranging the first adhesive layer in the plurality of grooves may enhance fixability. The display device includes a plurality of semiconductor light emitting devices. The semiconductor light emitting devices may include a horizontal semiconductor light emitting device, a flip chip semiconductor light emitting device, or a vertical semiconductor light emitting device.

A display substrate (910), comprising a plurality of pixel units (P11, P12, P21, P22) and at least one compensation circuit. At least one pixel unit (P11, P12, P21, P22) comprises: a main light-emitting unit and an auxiliary light-emitting unit; and the at least one compensation circuit is connected to the auxiliary light-emitting unit of the at least one pixel unit (P11, P12, P21, P22). The at least one compensation circuit is configured to measure the brightness or temperature of the at least one pixel unit (P11, P12, P21, P22) and control the auxiliary light-emitting unit of the at least one pixel unit (P11, P12, P21, P22) to emit light according to a measurement result.

A method for manufacturing an LED structure includes forming a first semiconductor layer on a first substrate; performing a first implantation operation to form a first implanted region and a first non-implanted region in a second doping semiconductor layer of the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer; performing a second implantation operation to form a second implanted region and a second non-implanted region in a fourth doping semiconductor layer of the second semiconductor layer; performing a first etch operation to remove a portion of the second semiconductor layer and expose at least the first non-implanted region; performing a second etch operation to expose a plurality of contacts of a driving circuit formed in the first substrate; and electrically connecting the first non-implanted region and the second non-implanted region with the plurality of contacts.

Disclosed is a Light-Emitting Device-Thin Film Transistor (LED-TFT) integration structure, comprising a substrate comprising a light emitting area and a driving area; a metal reflective film formed on the substrate; a buffer layer formed on the metal reflective film; LED disposed in the light emitting area; a protective layer formed on the LED; a thin film transistor disposed in the driving area and configured to drive the LED; and an ohmic contact metal for electrically connecting a cathode of the LED with the metal reflective film, wherein the LED and the thin film transistor are integrally formed on the substrate.

A chip structure is provided. The chip structure includes a chip wafer unit and a color conversion layer substrate unit arranged on a light-exit side of the chip wafer unit. The chip wafer unit includes a plurality of sub-pixel light-emitting functional layers. The color conversion layer substrate unit includes a color conversion layer arranged on the light-exit side of the chip wafer unit. The chip wafer unit further includes a first bonding layer, arranged between the sub-pixel light-emitting functional layers and the color conversion layer, and configured to bond the chip wafer unit and the color conversion layer substrate unit.

Provided are a display base plate and a preparation method thereof and a display apparatus, belonging to the technical field of display devices. The display base plate comprises a substrate, and a light-emitting diode and a driving circuit which are patterned and arranged on one side of the substrate, and the light-emitting diode comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked; and the driving circuit is respectively connected with the first semiconductor layer and the second semiconductor layer, and is used for driving the light-emitting diode to emit light. By the display base plate and the preparation method thereof and the display apparatus provided by the embodiment of the application, the difficulty of integrating the driving circuit and the light-emitting diode in the display base plate can be reduced, so that a preparation process of the display base plate is simpler.

A display substrate and a method of manufacturing the display substrate are provided. The display substrate includes a base substrate and a plurality of sub-pixels. A first electrode of a light-emitting element of the sub-pixel includes: a first conductive layer electrically connected to a source or a drain of a driving transistor of the sub-pixel; a second conductive layer; and a transparent material layer. The transparent material layer includes a first transparent material sub-layer and a second transparent material sub-layer, the first transparent material sub-layer is between the second transparent material sub-layer and the second conductive layer, the second transparent material sub-layer covers the first transparent material sub-layer, and an edge of the first transparent material sub-layer is aligned with an edge of the second conductive layer.

A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode, a first contact layer and a diffusion structure. The epitaxial structure includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer stacked in sequence. The second-type semiconductor layer has an outer surface relatively away from the first-type semiconductor layer. The first and second electrodes are respectively disposed on the epitaxial structure and electrically connected to the first-type and the second-type semiconductor layers. The first contact layer is disposed between the first electrode and the first-type semiconductor layer. The diffusion structure is disposed on a side of the second-type semiconductor layer away from the first-type semiconductor layer. A conductivity of the diffusion structure is less than that of the second-type semiconductor layer. The outer surface of the second-type semiconductor layer exposes a lower surface of the diffusion structure away from the first-type semiconductor layer.

A display panel has a first display region, a second display region, a first peripheral region and a second peripheral region. The first peripheral region is located outside the first display region, the second peripheral region is located outside the second display region, and a transmittance of the first display region is greater than a transmittance of the second display region. The display panel includes a substrate, light-emitting devices disposed on the substrate and located in the first display region, first pixel circuits disposed on the substrate and located in the first peripheral region, and a gating circuit disposed on the substrate and coupled to the light-emitting devices and the first pixel circuits. The gating circuit is configured to connect each first pixel circuit to at least two light-emitting devices in a time-division manner to drive the light-emitting devices connected to the first pixel circuit to emit light.

A display panel includes a substrate, first bonding electrodes, connecting leads, an electrode carrier plate and second bonding electrodes. The substrate includes a display surface, a non-display surface, and a selected side face. The display surface includes a first bonding area, and the non-display surface includes a second bonding area. The first bonding electrodes are arranged side by side at the intervals in the first bonding area. The connecting leads are arranged side by side at intervals, each connecting lead includes a first portion, a second portion and a third portion, and the first portion of each connecting lead is electrically connected to a first bonding electrode. The electrode carrier plate is arranged on the non-display surface and provided thereon with the second bonding electrodes arranged side by side at intervals, and each second bonding electrode is electrically connected to a third portion of a connecting lead.