The invention relates to a MEMS sound transducer (2) for generating and/or detecting sound waves in the audible wavelength spectrum with a membrane carrier (40), a membrane (30) that is connected in its edge area (37) to the membrane carrier, and may vibrate along the z-axis (50) with respect to the membrane carrier, and a stopper mechanism (60), which limits the vibrations of the membrane in at least one direction (51). In accordance with the invention, the MEMS sound transducer is characterized by the fact that the stopper mechanism at least features one reinforcing element (31) that is arranged on one side of the membrane, and an end stop (61) opposite to the reinforcing element, which is spaced at a distance from it in a neutral position of the membrane and against which the reinforcing element abuts at a maximum deflection. The invention also relates to a transducer arrangement (1) with such a MEMS sound transducer (2).

A MEMS microphone includes a substrate (100), a supporting part (200), an upper polar plate (300) and a lower polar plate (400). The substrate (100) is provided with an opening (120) penetrating the middle thereof; the lower polar plate (400) straddles the opening (120); the supporting part (200) is fixed on the lower polar plate (400); the upper polar plate (300) is affixed to the supporting part (200); an accommodating cavity (500) is formed among the supporting part (200), the upper polar plate (300) and the lower polar plate (400); a recess (600) opposite to the accommodating cavity (500) is arranged in an intermediate region of at least one of the upper polar plate (300) and the lower polar plate (400), and insulation is achieved between the upper polar plate (300) and a lower polar plate (400).

A device may include a device layer, wherein a vertical direction is perpendicular to a surface of the device layer, a movable structure in the device layer, wherein a first rotation axis extends through the movable structure and lies in the device layer, an electrostatic in-plane force transducer, which comprises one or more first transducer structure on a first side from the first rotation axis, and one or more second transducer structure on a second side from the first rotation axis, and a first translation spring, which extends from the movable structure to the electrostatic in-plane force transducer on the first side from the first rotation axis, and a second translation spring which extends from the movable structure to the electrostatic in-plane force transducer on the second side from the first rotation axis, and wherein the first translation spring and the second translation spring are in the device layer.

An electrostatic MEMS transducer includes a membrane and an actuator array. The actuator array includes a plurality of vertical parallel-plate actuator cells. Each vertical actuator cell comprises two silicon electrodes and a polysilicon electrode positioned between the two silicon electrodes. The actuator cells are configured to generate oscillation of the membrane responsive to an electrical signal.

A MEMS device includes a frame-shaped fixed portion, a movable portion disposed inside the fixed portion in plan view, four torsion beams supporting the movable portion, a drive beam provided for each torsion beam of the four torsion beams and including a first end connected to the torsion beam and a second end connected to an inner edge of the fixed portion, and a drive source disposed for each of the drive beams. Each of the drive beams is disposed point-symmetrically with respect to a center of the movable portion in plan view. In plan view, each of the drive beams includes a region whose width in a direction parallel to a first side, of the drive beam, connected to the inner edge gradually increases toward the first side.

The technology described herein is directed towards a reconfigurable intelligent surface (RIS) based on microelectromechanical systems (MEMS) technology, in which MEMS micro-actuators are integrated into unit cells of the RIS. A ring-shaped cantilever, resulting from unit cell fabrication, operates as an electrothermal actuator in the unit cell's resonating pattern. A controlled voltage is applied to the ring-shaped cantilever, deforming (bending up) the metal (e.g., aluminum) ring at its non-anchored (free) portion from its relatively straight non-actuated state via joule heating. The amount of vertical displacement of the free portion of the ring when voltage is applied changes the structure of the unit cell's geometry based on the amount of voltage, whereby analog-like tuning of the unit cell's characteristics (including phase shift) is obtained. When combined with the voltage-controlled phase shifts of other unit cells of the RIS, beamforming of a reflected incoming electromagnetic wave is achieved.

A MEMS device and a method for manufacturing the MEMS device are provided. The MEMS device includes a cap sheet and a device sheet. The device sheet includes a silicon substrate, at least two device structure layers, and at least one conductive structure layer, and each two adjacent device structure layers are coupled via a corresponding conductive structure layer. The device sheet defines a functional cavity having a first region, a second region, and a third region. The at least two device structure layers and the at least one conductive structure layer each are across the first region, the second region, and the third region, and the at least two device structure layers and the at least one conductive structure layer cooperatively form a first movable structure in the first region, define an anchor point in the second region, and form a second movable structure in the third region.

A microelectromechanical device is provided that includes a device layer and first and second comb structures. The bottom of the first comb structure has a z-coordinate that is greater than both the z-coordinate of the bottom face of the device layer and the z-coordinate of the bottom of the second comb structure. The top of the second comb structure has a z-coordinate that is smaller than both the z-coordinate of the top face of the device layer and the z-coordinate of the top of the first comb structure. The device layer also comprises a cavity which extends from the bottom face of the device layer to the bottom of the second comb structure.