A microelectromechanical system includes a backplate and a diaphragm. The backplate includes spaced stator elements with voids formed therebetween. The stator element includes a first conductive element. The diaphragm includes a plurality of corrugations facing the voids respectively. Each corrugation includes a groove formed at a surface thereof away from the backplate. The corrugation includes a second conductive element. The diaphragm is moveable with respect to the backplate in response to a pressure exerted thereon to cause the corrugations to be moved into or out of the corresponding voids, thereby changing the capacitance formed between the first and second conductive elements. The corrugations are defined by grooves formed at surfaces away from the backplate, which facilitate to control the compliance of the diaphragm and reduce stiffness of the diaphragm. The corrugation can be formed with lower aspect ratios, which allows it to be formed using standard front side processes.

A method produces a micromechanical sensor element having a first electrode and a second electrode, wherein electrode wall surfaces of the first and the second electrodes are situated opposite one another in a first direction and form a capacitance, wherein one of the first electrode or the second electrode is movable in a second direction, in response to a variable to be detected, and a second one of the first electrode and the second electrode is fixed. The method includes producing a cavity in a semiconductor substrate, the cavity being closed by a doped semiconductor layer; producing the first and the second electrodes in the semiconductor layer, including modifying the electrode wall surface of the first electrode in order to have a smaller extent in the second direction than the electrode wall surface of the second electrode.

An object is to reduce the influence of noise due to electric conduction carriers trapped between the surface of a silicon substrate and an oxide and thus achieve strain detection with a high S/N ratio. This semiconductor strain detection element includes: a silicon substrate; and a first impurity diffusion layer having a conduction type different from the silicon substrate, the first impurity diffusion layer being formed inside under a surface of the silicon substrate, wherein an amount of strain in the silicon substrate is detected on the basis of change in a resistance of the first impurity diffusion layer.

A micro-electromechanical system (MEMS) device comprises a fixed portion and a proofmass suspended by at least one composite beam. The composite beam is cantilevered relative to the fixed portion and extends between a first end that is integrally formed with the fixed portion and a second distal end. The composite beam comprises an insulator having a top surface and at least two side surfaces; a conductor extending away from the fixed portion and surrounding at least a portion of the insulator; and a second conductor positioned adjacent to the top surface of the conductor and extending parallel with the insulator away from the fixed portion. The second conductor is separated from the first conductor to provide a low parasitic conductance of the composite beam.

Micro-electro-mechanical systems and a preparation method thereof are provided. The micro-electro-mechanical systems include first fixed comb fingers, second fixed comb fingers, a support beam, a movable platform, and movable comb fingers. The first fixed comb fingers and the second fixed comb fingers are fastened to a substrate, and the first fixed comb fingers are electrically isolated from the second fixed comb fingers. Two ends of the support beam are fastened to the substrate, and the movable platform is coupled to the support beam. The movable comb fingers are coupled to the movable platform, and form a three-layer comb finger structure with the first fixed comb fingers and the second fixed comb fingers. This structure improves drive efficiency of the micro-electro-mechanical systems.

A microelectromechanical sensor device has a detection structure, having: a substrate, with a top surface; an inertial mass, suspended above the top surface of the substrate and elastically coupled to a rotor anchor so as to perform an inertial movement relative to the substrate as a function of a quantity to be detected; and stator electrodes, integrally coupled to the substrate at respective stator anchors and capacitively coupled to the inertial mass so as to generate a differential capacitive variation in response to, and indicative of, the quantity to be detected. In particular, the inertial mass performs, as the inertial movement, a translation movement along a vertical axis orthogonal to the top surface of the substrate; and the stator electrodes are arranged in a suspended manner above the top surface of the substrate.

A capacitive microelectromechanical systems (MEMS) sensor is provided, having conductive coatings on opposing surfaces of capacitive structures. The capacitive structures may be formed of silicon, and the conductive coating is formed of tungsten in some embodiments. The structure is formed in some embodiments by first releasing the silicon structures and then selectively coating them in the conductive material. In some embodiments, the coating may result in encapsulating the capacitive structures.

A MEMS device is obtained by forming a temporary biasing structure on a semiconductor body, and forming an actuation coil on the semiconductor body, the actuation coil having at least one first end turn, one second end turn and an intermediate turn arranged between the first and the second end turns and electrically coupled to the first end turn through the temporary biasing structure. In this way, the intermediate turn is biased at approximately the same potential as the first end turn during galvanic growth, and, at the end of growth, the actuation coil has an approximately uniform thickness. At the end of galvanic growth, portions of the temporary biasing structure are selectively removed to electrically separate the first end turn from the intermediate turn and from a dummy biasing region adjacent to the first end turn.

A force sensor having a noise shielding layer is disclosed. For a first embodiment, a top noise shielding layer is configured on a top surface of a force sensor to screen noise signals which are caused by human body's touch or approaching from top of the force sensor. For a second embodiment, a bottom noise shielding layer is configured on a bottom surface of the force sensor to screen noise signals which are caused by human body's touch or approaching from bottom of the force sensor.

An all-silicon electrode capacitive transducer comprising: a movable silicon microstructure coupled to a glass substrate, the movable silicon microstructure having a movable silicon electrode, the glass substrate having a top surface and at least one recess, the movable silicon electrode having a first flat surface parallel to a plane of the top surface of the glass substrate, the movable silicon electrode having a first electronic work function; and a stationary silicon electrode coupled to a glass substrate, the stationary silicon electrode located adjacent to the movable silicon electrode, the stationary silicon electrode configured to sense or actuate displacement of the movable silicon microstructure, wherein the stationary silicon electrode has a second flat surface parallel to the first flat surface, the stationary silicon electrode having a second electronic work function equal to the first electronic work function.